Hans-Joachim Ludwig Gossmann

Person

Union, NJ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Techniques to increase CMOS image sensor well depth by cyrogenic io...
- Patent number 11,830,739
- Issue date Nov 28, 2023
- Applied Materials, Inc.
- Hans-Joachim L. Gossmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channeled implants for SiC MOSFET fabrication
- Patent number 11,804,537
- Issue date Oct 31, 2023
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for hi-precision ion implantation
- Patent number 11,699,570
- Issue date Jul 11, 2023
- Applied Materials, Inc.
- Supakit Charnvanichborikarn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and technique for profile modulation using high tilt angles
- Patent number 11,551,904
- Issue date Jan 10, 2023
- Applied Materials, Inc.
- Venkataramana R. Chavva
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontal GAA nano-wire and nano-slab transistors
- Patent number 11,495,500
- Issue date Nov 8, 2022
- Applied Materials, Inc.
- Benjamin Colombeau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Angled ion implant to reduce MOSFET trench sidewall roughness
- Patent number 11,424,125
- Issue date Aug 23, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming non-line-of-sight source drain extension in an NMOS FINFET...
- Patent number 10,483,355
- Issue date Nov 19, 2019
- Applied Materials, Inc.
- Matthias Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating asymmetrical three dimensional device
- Patent number 10,381,465
- Issue date Aug 13, 2019
- Varian Semiconductor Equipment Associates, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming non-line-of-sight source drain extension in an nMOS finFET...
- Patent number 9,853,129
- Issue date Dec 26, 2017
- Applied Materials, Inc.
- Matthias Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating three dimensional device
- Patent number 9,748,364
- Issue date Aug 29, 2017
- Varian Semiconductor Equipment Associates, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improving fin isolation
- Patent number 9,455,196
- Issue date Sep 27, 2016
- Varian Semiconductor Equipment Associates, Inc.
- Nilay A. Pradhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for ion implantation of non-planar field effect transistors
- Patent number 9,455,335
- Issue date Sep 27, 2016
- Varian Semiconductor Equiment Associates, Inc
- Anthony Renau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Increasing the electrical activation of ion-implanted dopants
- Patent number 6,632,728
- Issue date Oct 14, 2003
- Agere Systems Inc.
- Hans-Joachim Ludwig Gossmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon semiconductor devices with δ-doped layers
- Patent number 6,403,454
- Issue date Jun 11, 2002
- Agere Systems Guardian Corp.
- Paul H. Citrin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits with tub-ties and shallow trench isolation
- Patent number 6,358,824
- Issue date Mar 19, 2002
- Agere Systems Guardian Corp.
- Hans-Joachim Ludwig Gossmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for controlling dopant diffusion in a semiconductor layer a...
- Patent number 6,153,920
- Issue date Nov 28, 2000
- Lucent Technologies Inc.
- Hans-Joachim Ludwig Gossmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making integrated circuits with tub-ties
- Patent number 6,054,342
- Issue date Apr 25, 2000
- Lucent Technologies Inc.
- Hans-Joachim Ludwig Gossmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for controlling dopant diffusion in a semiconductor layer
- Patent number 6,043,139
- Issue date Mar 28, 2000
- Lucent Technologies Inc.
- David James Eaglesham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits with tub-ties
- Patent number 5,949,112
- Issue date Sep 7, 1999
- Lucent Technologies Inc.
- Hans-Joachim Ludwig Gossmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for controlling dopant diffusion in a semiconductor layer a...
- Patent number 5,731,626
- Issue date Mar 24, 1998
- Lucent Technologies Inc.
- David James Eaglesham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a semiconductor device including diffusion control
- Patent number 5,500,391
- Issue date Mar 19, 1996
- AT&T Corp.
- Joze Bevk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming a semiconductor layer using molecular beam epitaxy
- Patent number 5,169,798
- Issue date Dec 8, 1992
- AT&T Bell Laboratories
- David J. Eaglesham
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR PRECISION OXIDATION CONTROL BY ION IMPLANTATION
- Publication number 20240203743
- Publication date Jun 20, 2024
- Applied Materials, Inc.
- Supakit Charnvanichborikarn
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
HORIZONTAL GAA NANO-WIRE AND NANO-SLAB TRANSISTORS
- Publication number 20230014586
- Publication date Jan 19, 2023
- Applied Materials, Inc.
- Benjamin Colombeau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR CONTROLLED ION IMPLANTATION
- Publication number 20230016122
- Publication date Jan 19, 2023
- Applied Materials, Inc.
- Alexander K. Eidukonis
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Channeled Implants For SiC MOSFET Fabrication
- Publication number 20220359710
- Publication date Nov 10, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANGLED ION IMPLANT TO REDUCE MOSFET TRENCH SIDEWALL ROUGHNESS
- Publication number 20220223416
- Publication date Jul 14, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES TO INCREASE CMOS IMAGE SENSOR WELL DEPTH BY CRYOGENIC IO...
- Publication number 20220108893
- Publication date Apr 7, 2022
- Applied Materials, Inc.
- Hans-Joachim L. Gossmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
System And Technique For Profile Modulation Using High Tilt Angles
- Publication number 20220076915
- Publication date Mar 10, 2022
- Applied Materials, Inc.
- Venkataramana R. Chavva
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HORIZONTAL GAA NANO-WIRE AND NANO-SLAB TRANSISTORS
- Publication number 20210119005
- Publication date Apr 22, 2021
- Applied Materials, Inc.
- Benjamin Colombeau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING NON-LINE-OF-SIGHT SOURCE DRAIN EXTENSION IN AN NMOS FINFET...
- Publication number 20180240893
- Publication date Aug 23, 2018
- Applied Materials, Inc.
- Matthias BAUER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING NON-LINE-OF-SIGHT SOURCE DRAIN EXTENSION IN AN NMOS FINFET...
- Publication number 20180069100
- Publication date Mar 8, 2018
- Applied Materials, Inc.
- Matthias BAUER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING NON-LINE-OF-SIGHT SOURCE DRAIN EXTENSION IN AN NMOS FINFET...
- Publication number 20170330960
- Publication date Nov 16, 2017
- Applied Materials, Inc.
- Matthias BAUER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING THREE DIMENSIONAL DEVICE
- Publication number 20160315176
- Publication date Oct 27, 2016
- Varian Semiconductor Equipment Associates, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING ASYMMETRICAL THREE DIMENSIONAL DEVICE
- Publication number 20160315177
- Publication date Oct 27, 2016
- Varian Semiconductor Equipment Associates, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method For Improving Fin Isolation
- Publication number 20160133523
- Publication date May 12, 2016
- Varian Semiconductor Equipment Associates, Inc.
- Nilay A. Pradhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES FOR ION IMPLANTATION OF NON-PLANAR FIELD EFFECT TRANSISTORS
- Publication number 20150132907
- Publication date May 14, 2015
- Varian Semiconductor Equipment Associates, Inc.
- Anthony Renau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Increasing the electrical activation of ion-implanted dopants
- Publication number 20030013260
- Publication date Jan 16, 2003
- Hans-Joachim Ludwig Gossmann
- H01 - BASIC ELECTRIC ELEMENTS

Hans-Joachim Ludwig Gossmann

Person

Patents Grantslast 30 patents

Techniques to increase CMOS image sensor well depth by cyrogenic io...

Channeled implants for SiC MOSFET fabrication

System and method for hi-precision ion implantation

System and technique for profile modulation using high tilt angles

Horizontal GAA nano-wire and nano-slab transistors

Angled ion implant to reduce MOSFET trench sidewall roughness

Forming non-line-of-sight source drain extension in an NMOS FINFET...

Method for fabricating asymmetrical three dimensional device

Forming non-line-of-sight source drain extension in an nMOS finFET...

Method for fabricating three dimensional device

Method for improving fin isolation

Techniques for ion implantation of non-planar field effect transistors

Increasing the electrical activation of ion-implanted dopants

Silicon semiconductor devices with &#x03B4;-doped layers

Integrated circuits with tub-ties and shallow trench isolation

Process for controlling dopant diffusion in a semiconductor layer a...

Method of making integrated circuits with tub-ties

Process for controlling dopant diffusion in a semiconductor layer

Integrated circuits with tub-ties

Process for controlling dopant diffusion in a semiconductor layer a...

Method for making a semiconductor device including diffusion control

Forming a semiconductor layer using molecular beam epitaxy

Patents Applicationslast 30 patents

METHOD FOR PRECISION OXIDATION CONTROL BY ION IMPLANTATION

HORIZONTAL GAA NANO-WIRE AND NANO-SLAB TRANSISTORS

METHOD AND APPARATUS FOR CONTROLLED ION IMPLANTATION

Channeled Implants For SiC MOSFET Fabrication

ANGLED ION IMPLANT TO REDUCE MOSFET TRENCH SIDEWALL ROUGHNESS

TECHNIQUES TO INCREASE CMOS IMAGE SENSOR WELL DEPTH BY CRYOGENIC IO...

System And Technique For Profile Modulation Using High Tilt Angles

HORIZONTAL GAA NANO-WIRE AND NANO-SLAB TRANSISTORS

FORMING NON-LINE-OF-SIGHT SOURCE DRAIN EXTENSION IN AN NMOS FINFET...

FORMING NON-LINE-OF-SIGHT SOURCE DRAIN EXTENSION IN AN NMOS FINFET...

FORMING NON-LINE-OF-SIGHT SOURCE DRAIN EXTENSION IN AN NMOS FINFET...

METHOD FOR FABRICATING THREE DIMENSIONAL DEVICE

METHOD FOR FABRICATING ASYMMETRICAL THREE DIMENSIONAL DEVICE

Method For Improving Fin Isolation

TECHNIQUES FOR ION IMPLANTATION OF NON-PLANAR FIELD EFFECT TRANSISTORS

Increasing the electrical activation of ion-implanted dopants

Silicon semiconductor devices with δ-doped layers