Hans Reisinger

Person

Gruenwald, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having an optical device degradation sensor
- Patent number 11,940,489
- Issue date Mar 26, 2024
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge-trapping memory device and methods for operating and manufac...
- Patent number 7,402,490
- Issue date Jul 22, 2008
- Infineon Technologies AG
- Thomas Mikolajick
- G11 - INFORMATION STORAGE
Information Patent Grant
Charge-trapping memory device including high permittivity strips
- Patent number 7,049,651
- Issue date May 23, 2006
- Infineon Technologies AG
- Thomas Mikolajick
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device for storing electrical charge and method for fabricat...
- Patent number 6,995,416
- Issue date Feb 7, 2006
- Infineon Technologies AG
- Hans Reisinger
- G11 - INFORMATION STORAGE
Information Patent Grant
Reactor configuration and method for producing it
- Patent number 6,887,437
- Issue date May 3, 2005
- Infineon Technologies AG
- Volker Lehmann
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Ferroelectric transistor, use thereof in a memory cell configuratio...
- Patent number 6,710,388
- Issue date Mar 23, 2004
- Infineon Technologies AG
- Thomas Peter Haneder
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell arrangement
- Patent number 6,627,940
- Issue date Sep 30, 2003
- Infineon Technologies AG
- Dirk Schumann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optical structure and method for producing the same
- Patent number 6,614,575
- Issue date Sep 2, 2003
- Infineon Technologies AG
- Ulrike Grüning
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Ferroelectric transistor and memory cell configuration with the fer...
- Patent number 6,614,066
- Issue date Sep 2, 2003
- Infineon Technologies AG
- Reinhard Stengl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perforated work piece, and method for producing it
- Patent number 6,558,770
- Issue date May 6, 2003
- Infineon Technologies AG
- Volker Lehmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DRAM memory capacitor having three-layer dielectric, and method for...
- Patent number 6,552,385
- Issue date Apr 22, 2003
- Infineon Technologies AG
- Gerhard Beitel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Storage capacitor for a DRAM
- Patent number 6,548,846
- Issue date Apr 15, 2003
- Infineon Technologies AG
- Hans Reisinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a memory cell configuration
- Patent number 6,534,362
- Issue date Mar 18, 2003
- Infineon Technologies AG
- Hans Reisinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell configuration with capacitor on opposite surface of sub...
- Patent number 6,518,613
- Issue date Feb 11, 2003
- Infineon Technologies AG
- Josef Willer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor for semiconductor configuration and method for fabricatin...
- Patent number 6,469,887
- Issue date Oct 22, 2002
- Infineon Technologies AG
- Harald Bachhofer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing an open form
- Patent number 6,468,348
- Issue date Oct 22, 2002
- Infineon Technologies AG
- Ulrike Grüning
- C30 - CRYSTAL GROWTH
Information Patent Grant
Memory cell arrangement and process for manufacturing the same
- Patent number 6,445,046
- Issue date Sep 3, 2002
- Siemens Aktiengesellschaft
- Franz Hofmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit configuration having at least one capacitor and...
- Patent number 6,441,424
- Issue date Aug 27, 2002
- Infineon Technologies AG
- Helmut Klose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell configuration and method for fabricating it
- Patent number 6,365,944
- Issue date Apr 2, 2002
- Infineon Technologies AG
- Hans Reisinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrically programmable non-volatile memory cell configuration
- Patent number 6,215,140
- Issue date Apr 10, 2001
- Siemens Aktiengesellschaft
- Hans Reisinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for a capacitor in an integrated memory circuit
- Patent number 6,204,119
- Issue date Mar 20, 2001
- Siemens Aktiengesellschaft
- Gerrit Lange
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for the fabrication of a doped silicon layer
- Patent number 6,197,666
- Issue date Mar 6, 2001
- Siemens Aktiengesellschaft
- Herbert Schafer
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Integrated electrical circuit having at least one memory cell and m...
- Patent number 6,194,765
- Issue date Feb 27, 2001
- Siemens Aktiengesellschaft
- Hans Reisinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrically programmable memory cell array, using charge carrier t...
- Patent number 6,191,459
- Issue date Feb 20, 2001
- Infineon Technologies AG
- Franz Hofmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a silicon capacitor
- Patent number 6,165,835
- Issue date Dec 26, 2000
- Siemens Aktiengesellschaft
- Hermann Wendt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for the manufacturing a memory cell configuration
- Patent number 6,153,475
- Issue date Nov 28, 2000
- Siemens Aktiengesellschaft
- Franz Hofmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of forming a semiconductor capacitor including forming a he...
- Patent number 6,140,177
- Issue date Oct 31, 2000
- Siemens Aktiengesellschaft
- Herbert Schafer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for operating a non-volatile memory cell arrangement
- Patent number 6,137,718
- Issue date Oct 24, 2000
- Siemens Aktiengesellschaft
- Hans Reisinger
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for fabricating a dopant region
- Patent number 6,133,126
- Issue date Oct 17, 2000
- Siemens Aktiengesellschaft
- Hans Reisinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for a capacitor in an integrated storage circuit
- Patent number 6,127,220
- Issue date Oct 3, 2000
- Siemens Aktiengesellschaft
- Gerrit Lange
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor Device Having an Optical Device Degradation Sensor
- Publication number 20230121426
- Publication date Apr 20, 2023
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Charge-trapping memory device and methods for operating and manufac...
- Publication number 20060091448
- Publication date May 4, 2006
- Thomas Mikolajick
- G11 - INFORMATION STORAGE
Information Patent Application
Charge-trapping memory device and methods for operating and manufac...
- Publication number 20050104117
- Publication date May 19, 2005
- Thomas Mikolajick
- G11 - INFORMATION STORAGE
Information Patent Application
Memory device for storing electrical charge and method for fabricat...
- Publication number 20040262637
- Publication date Dec 30, 2004
- Infineon Technologies AG
- Hans Reisinger
- G11 - INFORMATION STORAGE
Information Patent Application
Method for fabricating a semiconductor component
- Publication number 20030114018
- Publication date Jun 19, 2003
- Martin Gutsche
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
STORAGE CAPACITOR FOR A DRAM
- Publication number 20020126543
- Publication date Sep 12, 2002
- Hans Reisinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric transistor and memory cell configuration with the fer...
- Publication number 20020117702
- Publication date Aug 29, 2002
- Reinhard Stengl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Capacitor for semiconductor configuration and method for fabricatin...
- Publication number 20020093781
- Publication date Jul 18, 2002
- Harald Bachhofer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory cell configuration and method for fabricating it
- Publication number 20020071320
- Publication date Jun 13, 2002
- Josef Willer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating a memory cell configuration
- Publication number 20020055247
- Publication date May 9, 2002
- Infineon Technologies AG
- Hans Reisinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric transistor, use thereof in a memory cell confuguratio...
- Publication number 20010038117
- Publication date Nov 8, 2001
- Thomas Peter Haneder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAM memory capacitor, and method for its production
- Publication number 20010031526
- Publication date Oct 18, 2001
- Gerhard Beitel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated circuit configuration, method for producing it, and wafe...
- Publication number 20010020730
- Publication date Sep 13, 2001
- Reinhard Stengl
- H01 - BASIC ELECTRIC ELEMENTS

Hans Reisinger

Person

Patents Grantslast 30 patents

Semiconductor device having an optical device degradation sensor

Charge-trapping memory device and methods for operating and manufac...

Charge-trapping memory device including high permittivity strips

Memory device for storing electrical charge and method for fabricat...

Reactor configuration and method for producing it

Ferroelectric transistor, use thereof in a memory cell configuratio...

Memory cell arrangement

Optical structure and method for producing the same

Ferroelectric transistor and memory cell configuration with the fer...

Perforated work piece, and method for producing it

DRAM memory capacitor having three-layer dielectric, and method for...

Storage capacitor for a DRAM

Method for fabricating a memory cell configuration

Memory cell configuration with capacitor on opposite surface of sub...

Capacitor for semiconductor configuration and method for fabricatin...

Method of producing an open form

Memory cell arrangement and process for manufacturing the same

Integrated circuit configuration having at least one capacitor and...

Memory cell configuration and method for fabricating it

Electrically programmable non-volatile memory cell configuration

Manufacturing method for a capacitor in an integrated memory circuit

Method for the fabrication of a doped silicon layer

Integrated electrical circuit having at least one memory cell and m...

Electrically programmable memory cell array, using charge carrier t...

Method for producing a silicon capacitor

Method for the manufacturing a memory cell configuration

Process of forming a semiconductor capacitor including forming a he...

Method for operating a non-volatile memory cell arrangement

Method for fabricating a dopant region

Manufacturing method for a capacitor in an integrated storage circuit

Patents Applicationslast 30 patents

Semiconductor Device Having an Optical Device Degradation Sensor

Charge-trapping memory device and methods for operating and manufac...

Charge-trapping memory device and methods for operating and manufac...

Memory device for storing electrical charge and method for fabricat...

Method for fabricating a semiconductor component

STORAGE CAPACITOR FOR A DRAM

Ferroelectric transistor and memory cell configuration with the fer...

Capacitor for semiconductor configuration and method for fabricatin...

Memory cell configuration and method for fabricating it

Method for fabricating a memory cell configuration

Ferroelectric transistor, use thereof in a memory cell confuguratio...

DRAM memory capacitor, and method for its production

Integrated circuit configuration, method for producing it, and wafe...