Haruhisa Mori

Person

Yokohama, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor substrate cleaning method and semiconductor device fa...
- Patent number 5,795,494
- Issue date Aug 18, 1998
- Fujitsu Limited
- Yuka Hayami
- B08 - CLEANING
Information Patent Grant
Method of producing a semiconductor device
- Patent number 4,889,820
- Issue date Dec 26, 1989
- Fujitsu Limited
- Haruhisa Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Disk exchangeable target mechanism with effective cooling means, fo...
- Patent number 4,806,769
- Issue date Feb 21, 1989
- Fujitsu Limited
- Haruhisa Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for measuring lattice defects in semiconductor
- Patent number 4,803,884
- Issue date Feb 14, 1989
- Fujitsu Limited
- Hiroshi Kaneta
- G01 - MEASURING TESTING
Information Patent Grant
Plasma generating device with stepped waveguide transition
- Patent number 4,788,473
- Issue date Nov 29, 1988
- Fujitsu Limited
- Haruhisa Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Primary particle beam irradiation apparatus and method of irradiati...
- Patent number 4,785,188
- Issue date Nov 15, 1988
- Fujitsu Limited
- Haruhisa Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laser treating implanted semiconductor surface through photo-resist...
- Patent number 4,500,365
- Issue date Feb 19, 1985
- Fujitsu Limited
- Haruhisa Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implantation equipment
- Patent number 4,410,801
- Issue date Oct 18, 1983
- Fujitsu Limited
- Junji Sakurai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective epitaxy by beam energy and devices thereon
- Patent number 4,381,202
- Issue date Apr 26, 1983
- Fujitsu Limited
- Haruhisa Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a semiconductor device by simultaneous multiple...
- Patent number 4,375,993
- Issue date Mar 8, 1983
- Fujitsu Limited
- Haruhisa Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of ion implantation into a semiconductor substrate provided...
- Patent number 4,258,077
- Issue date Mar 24, 1981
- Fujitsu Limited
- Haruhisa Mori
- H01 - BASIC ELECTRIC ELEMENTS

Haruhisa Mori

Person

Patents Grantslast 30 patents

Semiconductor substrate cleaning method and semiconductor device fa...

Method of producing a semiconductor device

Disk exchangeable target mechanism with effective cooling means, fo...

Method for measuring lattice defects in semiconductor

Plasma generating device with stepped waveguide transition

Primary particle beam irradiation apparatus and method of irradiati...

Laser treating implanted semiconductor surface through photo-resist...

Ion implantation equipment

Selective epitaxy by beam energy and devices thereon

Method of producing a semiconductor device by simultaneous multiple...

Method of ion implantation into a semiconductor substrate provided...