Heike Salz

Person

Radebeul, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Method for selectively removing a spacer in a dual stress liner app...
- Patent number 9,006,114
- Issue date Apr 14, 2015
- Advanced Micro Devices, Inc.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact trenches for enhancing stress transfer in closely spaced tr...
- Patent number 8,390,127
- Issue date Mar 5, 2013
- Advanced Micro Devices, Inc.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for reducing topography-related irregularities during the...
- Patent number 8,338,314
- Issue date Dec 25, 2012
- Advanced Micro Devices, Inc.
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interlayer dielectric material in a semiconductor device comprising...
- Patent number 8,034,726
- Issue date Oct 11, 2011
- Advanced Micro Devices, Inc.
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for patterning differently stressed layers formed above t...
- Patent number 7,883,629
- Issue date Feb 8, 2011
- GLOBALFOUNDRIES Inc.
- Matthias Schaller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stressed interlayer dielectric with reduced probability for void ge...
- Patent number 7,763,507
- Issue date Jul 27, 2010
- GLOBALFOUNDRIES Inc.
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reducing etch-induced process uniformities by omitting d...
- Patent number 7,700,377
- Issue date Apr 20, 2010
- GLOBALFOUNDRIES, INC.
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a contact structure with increased...
- Patent number 7,678,690
- Issue date Mar 16, 2010
- Advanced Micro Devices, Inc.
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for creating different mechanical strain by forming a con...
- Patent number 7,608,501
- Issue date Oct 27, 2009
- Advanced Micro Devices, Inc.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reducing resist poisoning during patterning of silicon n...
- Patent number 7,550,396
- Issue date Jun 23, 2009
- Advanced Micro Devices, Inc.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for creating different mechanical strain by a contact etc...
- Patent number 7,482,219
- Issue date Jan 27, 2009
- Advanced Micro Devices, Inc.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of increasing the etch selectivity in a contact structure of...
- Patent number 7,416,973
- Issue date Aug 26, 2008
- Advanced Micro Devices, Inc.
- Carsten Peters
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TECHNIQUE FOR REDUCING TOPOGRAPHY-RELATED IRREGULARITIES DURING THE...
- Publication number 20130095648
- Publication date Apr 18, 2013
- Advanced Micro Devices, Inc.
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT TRENCHES FOR ENHANCING STRESS TRANSFER IN CLOSELY SPACED TR...
- Publication number 20090321837
- Publication date Dec 31, 2009
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE FOR REDUCING TOPOGRAPHY-RELATED IRREGULARITIES DURING THE...
- Publication number 20090275200
- Publication date Nov 5, 2009
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR SELECTIVELY REMOVING A SPACER IN A DUAL STRESS LINER APP...
- Publication number 20090273035
- Publication date Nov 5, 2009
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERLAYER DIELECTRIC MATERIAL IN A SEMICONDUCTOR DEVICE COMPRISING...
- Publication number 20090166800
- Publication date Jul 2, 2009
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESSED INTERLAYER DIELECTRIC WITH REDUCED PROBABILITY FOR VOID GE...
- Publication number 20090140396
- Publication date Jun 4, 2009
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE FOR PATTERNING DIFFERENTLY STRESSED LAYERS FORMED ABOVE T...
- Publication number 20080206905
- Publication date Aug 28, 2008
- Matthias Schaller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR REDUCING ETCH-INDUCED PROCESS UNIFORMITIES BY OMITTING D...
- Publication number 20080182346
- Publication date Jul 31, 2008
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR REDUCING RESIST POISONING DURING PATTERNING OF SILICON N...
- Publication number 20080081480
- Publication date Apr 3, 2008
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF INCREASING THE ETCH SELECTIVITY IN A CONTACT STRUCTURE OF...
- Publication number 20070178685
- Publication date Aug 2, 2007
- Carsten Peters
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING A CONTACT STRUCTURE WITH INCREASED...
- Publication number 20070152343
- Publication date Jul 5, 2007
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE FOR CREATING DIFFERENT MECHANICAL STRAIN BY FORMING A CON...
- Publication number 20070077708
- Publication date Apr 5, 2007
- KAI FROHBERG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE FOR CREATING DIFFERENT MECHANICAL STRAIN BY A CONTACT ETC...
- Publication number 20070077741
- Publication date Apr 5, 2007
- KAI FROHBERG
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Method for selectively removing a spacer in a dual stress liner app...

Contact trenches for enhancing stress transfer in closely spaced tr...

Technique for reducing topography-related irregularities during the...

Interlayer dielectric material in a semiconductor device comprising...

Technique for patterning differently stressed layers formed above t...

Stressed interlayer dielectric with reduced probability for void ge...

Method for reducing etch-induced process uniformities by omitting d...

Semiconductor device comprising a contact structure with increased...

Technique for creating different mechanical strain by forming a con...

Method for reducing resist poisoning during patterning of silicon n...

Technique for creating different mechanical strain by a contact etc...

Method of increasing the etch selectivity in a contact structure of...

Patents Applicationslast 30 patents

TECHNIQUE FOR REDUCING TOPOGRAPHY-RELATED IRREGULARITIES DURING THE...

CONTACT TRENCHES FOR ENHANCING STRESS TRANSFER IN CLOSELY SPACED TR...

TECHNIQUE FOR REDUCING TOPOGRAPHY-RELATED IRREGULARITIES DURING THE...

METHOD FOR SELECTIVELY REMOVING A SPACER IN A DUAL STRESS LINER APP...

INTERLAYER DIELECTRIC MATERIAL IN A SEMICONDUCTOR DEVICE COMPRISING...

STRESSED INTERLAYER DIELECTRIC WITH REDUCED PROBABILITY FOR VOID GE...

TECHNIQUE FOR PATTERNING DIFFERENTLY STRESSED LAYERS FORMED ABOVE T...

METHOD FOR REDUCING ETCH-INDUCED PROCESS UNIFORMITIES BY OMITTING D...

METHOD FOR REDUCING RESIST POISONING DURING PATTERNING OF SILICON N...

METHOD OF INCREASING THE ETCH SELECTIVITY IN A CONTACT STRUCTURE OF...

SEMICONDUCTOR DEVICE COMPRISING A CONTACT STRUCTURE WITH INCREASED...

TECHNIQUE FOR CREATING DIFFERENT MECHANICAL STRAIN BY FORMING A CON...

TECHNIQUE FOR CREATING DIFFERENT MECHANICAL STRAIN BY A CONTACT ETC...