Henry J. Geipel Jr.

Person

Essex Junction, VT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Growth of bird's beak free semi-rox
- Patent number 4,631,219
- Issue date Dec 23, 1986
- International Business Machines Corporation
- Henry J. Geipel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS contacting structure having degeneratively doped regions for t...
- Patent number 4,622,573
- Issue date Nov 11, 1986
- International Business Machines Corporation
- Paul E. Bakeman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating semiconductor devices utilizing a protectiv...
- Patent number 4,527,325
- Issue date Jul 9, 1985
- International Business Machines Corporation
- Henry J. Geipel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Simple process for making complementary transistors
- Patent number 4,480,375
- Issue date Nov 6, 1984
- International Business Machines Corporation
- Peter E. Cottrell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for making complementary transistors by sequential implanta...
- Patent number 4,470,191
- Issue date Sep 11, 1984
- International Business Machines Corporation
- Peter E. Cottrell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making high density complementary transistors
- Patent number 4,462,151
- Issue date Jul 31, 1984
- International Business Machines Corporation
- Henry J. Geipel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a highly conductive structure
- Patent number 4,398,341
- Issue date Aug 16, 1983
- International Business Machines Corp.
- Henry J. Geipel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method for high conductivity, void-free polysilicon-sil...
- Patent number 4,389,257
- Issue date Jun 21, 1983
- International Business Machines Corporation
- Henry J. Geipel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming IGFET devices having improved drain voltage char...
- Patent number 4,369,072
- Issue date Jan 18, 1983
- International Business Machines Corp.
- Paul E. Bakeman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making low leakage shallow junction IGFET devices
- Patent number 4,329,773
- Issue date May 18, 1982
- International Business Machines Corp.
- Henry J. Geipel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a transistor array
- Patent number 4,282,646
- Issue date Aug 11, 1981
- International Business Machines Corporation
- Andres G. Fortino
- G11 - INFORMATION STORAGE

Henry J. Geipel Jr.

Person

Patents Grantslast 30 patents

Growth of bird's beak free semi-rox

CMOS contacting structure having degeneratively doped regions for t...

Process for fabricating semiconductor devices utilizing a protectiv...

Simple process for making complementary transistors

Process for making complementary transistors by sequential implanta...

Method of making high density complementary transistors

Method of fabricating a highly conductive structure

Fabrication method for high conductivity, void-free polysilicon-sil...

Method for forming IGFET devices having improved drain voltage char...

Method of making low leakage shallow junction IGFET devices

Method of making a transistor array