Heung-Jin Joo

Person

Gyeonggi-do, KR

People

Patents Grantslast 30 patents

Information Patent Grant
Three-dimensional semiconductor memory devices
- Patent number 10,937,797
- Issue date Mar 2, 2021
- Samsung Electronics Co., Ltd.
- Seongjun Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,896,917
- Issue date Jan 19, 2021
- Samsung Electronics Co., Ltd.
- Min Sung Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,529,736
- Issue date Jan 7, 2020
- Samsung Electronics Co., Ltd.
- Min Sung Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Variable resistance memory devices having reduced reset current
- Patent number 8,748,884
- Issue date Jun 10, 2014
- Samsung Electronics Co., Ltd.
- Ji-Hyun Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming variable-resistance memory devices and devices f...
- Patent number 8,598,010
- Issue date Dec 3, 2013
- Samsung Electronics Co., Ltd.
- Heung Jin Joo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable resistance memory devices and methods of forming variable...
- Patent number 8,071,423
- Issue date Dec 6, 2011
- Samsung Electronics Co. Ltd.
- Heung Jin Joo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked ferroelectric memory devices, methods of manufacturing the...
- Patent number 7,586,774
- Issue date Sep 8, 2009
- Samsung Electronics Co., Ltd.
- Heung-Jin Joo
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor devices having a metal-insulator-metal capacitor and...
- Patent number 7,495,311
- Issue date Feb 24, 2009
- Samsung Electronics Co., Ltd.
- Hyun-Ho Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric integrated circuit devices having an oxygen penetrati...
- Patent number 7,348,616
- Issue date Mar 25, 2008
- Samsung Electronics Co., Ltd.
- Heung-jin Joo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FeRAM device and method for manufacturing the same
- Patent number 7,294,876
- Issue date Nov 13, 2007
- Samsung Electronics Co., Ltd.
- Heung-Jin Joo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple stacked capacitors formed within an opening with thick cap...
- Patent number 7,262,453
- Issue date Aug 28, 2007
- Samsung Electronics Co., Ltd.
- Heung-Jin Joo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having capacitors of metal-insulator-metal st...
- Patent number 7,144,772
- Issue date Dec 5, 2006
- Samsung Electronics Co., Ltd.
- Sung-Yung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple stacked capacitors formed within an opening with thick cap...
- Patent number 7,105,418
- Issue date Sep 12, 2006
- Samsung Electronics Co., Ltd.
- Heung-Jin Joo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory devices with enhanced ferroelectric properties...
- Patent number 7,052,951
- Issue date May 30, 2006
- Samsung Electronics Co., Ltd.
- Heung-Jin Joo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric integrated circuit devices having an oxygen penetrati...
- Patent number 6,979,881
- Issue date Dec 27, 2005
- Samsung Electronics Co., Ltd.
- Heung-jin Joo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming electronic devices including capacitor structures
- Patent number 6,911,362
- Issue date Jun 28, 2005
- Samsung Electronics Co., Ltd.
- Ki-Nam Kim
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20200127009
- Publication date Apr 23, 2020
- Samsung Electronics Co., Ltd.
- Min Sung SONG
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES
- Publication number 20190304991
- Publication date Oct 3, 2019
- Samsung Electronics Co., Ltd.
- Seongjun SEO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20190172840
- Publication date Jun 6, 2019
- Samsung Electronics Co., Ltd.
- Min Sung SONG
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE CHANGE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20120228577
- Publication date Sep 13, 2012
- Kyusul PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Variable-Resistance Memory Devices and Devices F...
- Publication number 20110263093
- Publication date Oct 27, 2011
- Heung Jin Joo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIABLE RESISTANCE MEMORY DEVICES AND METHODS FOR FABRICATING THE...
- Publication number 20110248235
- Publication date Oct 13, 2011
- SAMSUNG ELECTRONICS CO., LTD.
- Ji-Hyun Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIABLE RESISTANCE MEMORY, OPERATING METHOD AND SYSTEM
- Publication number 20110188292
- Publication date Aug 4, 2011
- Samsung Electronics Co., Ltd.
- Heung Jin JOO
- G11 - INFORMATION STORAGE
Information Patent Application
Phase-Changeable Random Access Memory Devices Including Barrier Lay...
- Publication number 20100181549
- Publication date Jul 22, 2010
- Song-Yi Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIABLE RESISTANCE MEMORY DEVICES AND METHODS OF FORMING VARIABLE...
- Publication number 20100173479
- Publication date Jul 8, 2010
- SAMSUNG ELECTRONICS CO., LTD.
- Heung Jin Joo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Node structures under capacitor in ferroelectric random access memo...
- Publication number 20080111171
- Publication date May 15, 2008
- Samsung Electronics Co., Ltd.
- Heung-Jin Joo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC RANDOM ACCESS MEMORY AND METHODS OF FABRICATING THE SAME
- Publication number 20080087926
- Publication date Apr 17, 2008
- Samsung Electronics Co., Ltd.
- Jung-Hoon Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Contact structure having conductive oxide layer, ferroelectric rand...
- Publication number 20080067566
- Publication date Mar 20, 2008
- Do-Yeon Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor memory device and method for forming the same
- Publication number 20080061334
- Publication date Mar 13, 2008
- SAMSUNG ELECTRONICS CO., LTD.
- Ju-Young Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FERROELECTRIC MEMORY DEVICES, METHODS OF MANUFACTURING THE...
- Publication number 20070189056
- Publication date Aug 16, 2007
- Samsung Electronics Co., Ltd.
- Heung-Jin Joo
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Devices Employing Ferroelectric Layer as Information Storage...
- Publication number 20070158731
- Publication date Jul 12, 2007
- SAMSUNG ELECTRONICS CO., LTD.
- Byoung-Jae Bae
- G11 - INFORMATION STORAGE
Information Patent Application
Multiple stacked capacitors formed within an opening with thick cap...
- Publication number 20060261396
- Publication date Nov 23, 2006
- Heung-Jin Joo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FeRAM device and method for manufacturing the same
- Publication number 20060157763
- Publication date Jul 20, 2006
- Heung-Jin Joo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric integrated circuit devices having an oxygen penetrati...
- Publication number 20060108622
- Publication date May 25, 2006
- Heung-jin Joo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor devices having a metal-insulator-metal capacitor and...
- Publication number 20060006447
- Publication date Jan 12, 2006
- Samsung Electronics Co., Ltd.
- Hyun-Ho Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multiple stacked capacitors formed within an opening with thick cap...
- Publication number 20050170599
- Publication date Aug 4, 2005
- Heung-Jin Joo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric memory devices with enhanced ferroelectric properties...
- Publication number 20040164323
- Publication date Aug 26, 2004
- Heung-Jin Joo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor devices having capacitors of metal-insulator-metal st...
- Publication number 20040108536
- Publication date Jun 10, 2004
- Sung-Yung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for forming electronic devices including capacitor structures
- Publication number 20040042134
- Publication date Mar 4, 2004
- Ki-Nam Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric integrated circuit devices having an oxygen penetrati...
- Publication number 20030141527
- Publication date Jul 31, 2003
- Heung-jin Joo
- H01 - BASIC ELECTRIC ELEMENTS

Heung-Jin Joo

Person

Patents Grantslast 30 patents

Three-dimensional semiconductor memory devices

Semiconductor device

Semiconductor device

Variable resistance memory devices having reduced reset current

Methods of forming variable-resistance memory devices and devices f...

Variable resistance memory devices and methods of forming variable...

Stacked ferroelectric memory devices, methods of manufacturing the...

Semiconductor devices having a metal-insulator-metal capacitor and...

Ferroelectric integrated circuit devices having an oxygen penetrati...

FeRAM device and method for manufacturing the same

Multiple stacked capacitors formed within an opening with thick cap...

Semiconductor devices having capacitors of metal-insulator-metal st...

Multiple stacked capacitors formed within an opening with thick cap...

Ferroelectric memory devices with enhanced ferroelectric properties...

Ferroelectric integrated circuit devices having an oxygen penetrati...

Methods for forming electronic devices including capacitor structures

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES

SEMICONDUCTOR DEVICE

PHASE CHANGE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

Methods of Forming Variable-Resistance Memory Devices and Devices F...

VARIABLE RESISTANCE MEMORY DEVICES AND METHODS FOR FABRICATING THE...

VARIABLE RESISTANCE MEMORY, OPERATING METHOD AND SYSTEM

Phase-Changeable Random Access Memory Devices Including Barrier Lay...

VARIABLE RESISTANCE MEMORY DEVICES AND METHODS OF FORMING VARIABLE...

Node structures under capacitor in ferroelectric random access memo...

FERROELECTRIC RANDOM ACCESS MEMORY AND METHODS OF FABRICATING THE SAME

Contact structure having conductive oxide layer, ferroelectric rand...

Semiconductor memory device and method for forming the same

STACKED FERROELECTRIC MEMORY DEVICES, METHODS OF MANUFACTURING THE...

Memory Devices Employing Ferroelectric Layer as Information Storage...

Multiple stacked capacitors formed within an opening with thick cap...

FeRAM device and method for manufacturing the same

Ferroelectric integrated circuit devices having an oxygen penetrati...

Semiconductor devices having a metal-insulator-metal capacitor and...

Multiple stacked capacitors formed within an opening with thick cap...

Ferroelectric memory devices with enhanced ferroelectric properties...

Semiconductor devices having capacitors of metal-insulator-metal st...

Methods for forming electronic devices including capacitor structures

Ferroelectric integrated circuit devices having an oxygen penetrati...