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Hideshi Nishikawa
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Patents Grants
last 30 patents
Information
Patent Grant
High resistance silicon wafer and its manufacturing method
Patent number
7,397,110
Issue date
Jul 8, 2008
Sumitomo Mitsubishi Silicon Corporation
Nobumitsu Takase
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Silicon annealed wafer and silicon epitaxial wafer
Patent number
7,273,647
Issue date
Sep 25, 2007
Sumitomo Mitsubishi Silicon Corporation
Hideshi Nishikawa
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Manufacturing method of high resistivity silicon single crystal
Patent number
7,220,308
Issue date
May 22, 2007
Sumitomo Mitsubishi Silicon Corporation
Nobumitsu Takase
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method for growing silicon single crystal
Patent number
7,014,704
Issue date
Mar 21, 2006
Sumitomo Mitsubishi Silicon Corporation
Toshiaki Ono
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method of manufacturing epitaxial wafer and method of producing sin...
Patent number
6,835,245
Issue date
Dec 28, 2004
Sumitomo Mitsubishi Silicon Corporation
Toshiaki Ono
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method of producing epitaxial wafers
Patent number
6,709,957
Issue date
Mar 23, 2004
Sumitomo Mitsubishi Silicon Corporation
Eiichi Asayama
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method of producing silicon single and single crystal silicon wafer
Patent number
6,337,219
Issue date
Jan 8, 2002
Sumitomo Metal Industries, Ltd.
Hideshi Nishikawa
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method of annealing a semiconductor wafer in a hydrogen atmosphere...
Patent number
5,508,207
Issue date
Apr 16, 1996
Sumitomo Sitix Corporation
Masataka Horai
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
High resistance silicon wafer and method for production thereof
Publication number
20050253221
Publication date
Nov 17, 2005
SUMITOMO MITSUBISHI SILICON CORPORATION
Nobumitsu Takase
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Manufacturing method of high resistivity silicon single crystal
Publication number
20050000410
Publication date
Jan 6, 2005
Nobumitsu Takase
C30 - CRYSTAL GROWTH
Information
Patent Application
Method for growing silicon single crystal
Publication number
20040244674
Publication date
Dec 9, 2004
Toshiaki Ono
C30 - CRYSTAL GROWTH
Information
Patent Application
Silicon annealed wafer and silicon epitaxial wafer
Publication number
20040194692
Publication date
Oct 7, 2004
Hideshi Nishikawa
C30 - CRYSTAL GROWTH
Information
Patent Application
Method of producing epitaxial wafers
Publication number
20030008447
Publication date
Jan 9, 2003
Eiichi Asayama
C30 - CRYSTAL GROWTH
Information
Patent Application
Method of manufacturing epitaxial wafer and method of producing sin...
Publication number
20020017234
Publication date
Feb 14, 2002
Sumitomo Metal Industries, Ltd., Osaka-shi, Japan
Toshiaki Ono
C30 - CRYSTAL GROWTH