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Hiroshi Momose
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Yokohama, JP
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last 30 patents
Information
Patent Grant
Semiconductor device
Patent number
5,629,537
Issue date
May 13, 1997
Kabushiki Kaisha Toshiba
Tetsu Nagamatsu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of manufacturing a semiconductor device including bipolar an...
Patent number
5,597,757
Issue date
Jan 28, 1997
Kabushiki Kaisha Toshiba
Takeo Maeda
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Inverter gate circuit of a bi-CMOS structure having common layers b...
Patent number
5,583,363
Issue date
Dec 10, 1996
Kabushiki Kaisha Toshiba
Hiroshi Momose
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of manufacturing a BiMOS device
Patent number
5,523,242
Issue date
Jun 4, 1996
Kabushiki Kaisha Toshiba
Takeo Maeda
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device having bipolar transistor and MOS transistor
Patent number
5,512,772
Issue date
Apr 30, 1996
Kabushiki Kaisha Toshiba
Takeo Maeda
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device having bipolar transistor and MOS transistor
Patent number
5,399,894
Issue date
Mar 21, 1995
Kabushiki Kaisha Toshiba
Takeo Maeda
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Bipolar transistor having an electrode structure suitable for integ...
Patent number
5,341,021
Issue date
Aug 23, 1994
Kabushiki Kaisha Toshiba
Takeo Maeda
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of manufacturing a BiMOS device
Patent number
5,340,751
Issue date
Aug 23, 1994
Kabushiki Kaisha Toshiba
Takeo Maeda
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
MOSFET input type BiMOS IC device
Patent number
5,247,200
Issue date
Sep 21, 1993
Kabushiki Kaisha Toshiba
Hiroshi Momose
G11 - INFORMATION STORAGE
Information
Patent Grant
Bi-CMOS semiconductor integrated circuit
Patent number
5,243,557
Issue date
Sep 7, 1993
Kabushiki Kaisha Toshiba
Takeo Maeda
G11 - INFORMATION STORAGE
Information
Patent Grant
Semiconductor device with improved collector structure
Patent number
5,227,654
Issue date
Jul 13, 1993
Kabushiki Kaisha Toshiba
Hiroshi Momose
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device
Patent number
5,091,760
Issue date
Feb 25, 1992
Kabushiki Kaisha Toshiba
Takeo Maeda
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device and method of manufacturing the same
Patent number
5,091,322
Issue date
Feb 25, 1992
Kabushiki Kaisha Toshiba
Takeo Maeda
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device having two different active elements whose par...
Patent number
5,031,020
Issue date
Jul 9, 1991
Kabushiki Kaisha Toshiba
Hiroshi Momose
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device
Patent number
4,754,318
Issue date
Jun 28, 1988
Kabushiki Kaisha Toshiba
Hiroshi Momose
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for manufacturing semiconductor device
Patent number
4,488,351
Issue date
Dec 18, 1984
Tokyo Shibaura Denki Kabushiki Kaisha
Hiroshi Momose
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for manufacturing semiconductor device
Patent number
4,478,655
Issue date
Oct 23, 1984
Tokyo Shibaura Denki Kabushiki Kaisha
Yoshihide Nagakubo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for making mask aligned narrow isolation grooves for a semic...
Patent number
4,463,493
Issue date
Aug 7, 1984
Tokyo Shibaura Denki Kabushiki Kaisha
Hiroshi Momose
H01 - BASIC ELECTRIC ELEMENTS