Hisashi MURAKAMI

Person

Fuchu-shi, Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method for growing beta-Ga2O3-based single crystal film, and crysta...
- Patent number 11,982,016
- Issue date May 14, 2024
- Tamura Corporation
- Ken Goto
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Vapor-liquid reaction device, reaction tube, film forming apparatus
- Patent number 11,499,247
- Issue date Nov 15, 2022
- National University Corporation Tokyo University of Agriculture and Technology
- Akinori Koukitu
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method for producing GaN crystal
- Patent number 11,371,140
- Issue date Jun 28, 2022
- Mitsubishi Chemical Corporation
- Kenji Iso
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Crystal laminate structure
- Patent number 11,047,067
- Issue date Jun 29, 2021
- Tamura Corporation
- Ken Goto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor substrate, and epitaxial wafer and method for produci...
- Patent number 10,985,016
- Issue date Apr 20, 2021
- Tamura Corporation
- Ken Goto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing GaN crystal
- Patent number 10,961,619
- Issue date Mar 30, 2021
- Mitsubishi Chemical Corporation
- Kenji Iso
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor element and crystalline laminate structure
- Patent number 10,861,945
- Issue date Dec 8, 2020
- Tamura Corporation
- Kohei Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride laminate and vertical semiconductor device having...
- Patent number 10,731,274
- Issue date Aug 4, 2020
- Stanley Electric Co., Ltd.
- Yoshinao Kumagai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate, epitaxial wafer, and method for manufactur...
- Patent number 10,676,841
- Issue date Jun 9, 2020
- Tamura Corporation
- Ken Goto
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Crystal laminate structure
- Patent number 10,538,862
- Issue date Jan 21, 2020
- Tamura Corporation
- Ken Goto
- C30 - CRYSTAL GROWTH
Information Patent Grant
High voltage withstand Ga2O3-based single crystal schottky barrier...
- Patent number 10,199,512
- Issue date Feb 5, 2019
- Tamura Corporation
- Kohei Sasaki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Nitride semiconductor crystal, manufacturing method and manufacturi...
- Patent number 10,125,433
- Issue date Nov 13, 2018
- National University Corporation Tokyo
- Akinori Koukitu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Indium gallium nitride light emitting devices
- Patent number 9,978,904
- Issue date May 22, 2018
- Soraa, Inc.
- Michael R. Krames
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preparation of carbonaceous products
- Patent number 4,210,517
- Issue date Jul 1, 1980
- Mitsui Mining Co. Ltd.
- Hisashi Murakami
- C10 - PETROLEUM, GAS OR COKE INDUSTRIES TECHNICAL GASES CONTAINING CARBON MON...
Information Patent Grant
Process for the production of solvent-refined coal useful as starti...
- Patent number 4,202,756
- Issue date May 13, 1980
- Mitsui Mining Co., Ltd.
- Hisashi Murakami
- C10 - PETROLEUM, GAS OR COKE INDUSTRIES TECHNICAL GASES CONTAINING CARBON MON...
Information Patent Grant
Process for liquefying coal
- Patent number 4,111,786
- Issue date Sep 5, 1978
- Mitsui Coke Co., Ltd.
- Hidehiko Sugimura
- C10 - PETROLEUM, GAS OR COKE INDUSTRIES TECHNICAL GASES CONTAINING CARBON MON...

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR GROWING BETA-GA2O3-BASED SINGLE CRYSTAL FILM, AND CRYSTA...
- Publication number 20210404086
- Publication date Dec 30, 2021
- TAMURA CORPORATION
- Ken GOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING GaN CRYSTAL
- Publication number 20210172061
- Publication date Jun 10, 2021
- MITSUBISHI CHEMICAL CORPORATION
- Kenji ISO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of Manufacturing Crystalline Gallium Nitride Film
- Publication number 20200255974
- Publication date Aug 13, 2020
- NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY
- Akinori Koukitu
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR SUBSTRATE, AND EPITAXIAL WAFER AND METHOD FOR PRODUCI...
- Publication number 20200243332
- Publication date Jul 30, 2020
- TAMURA CORPORATION
- Ken GOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRYSTAL LAMINATE STRUCTURE
- Publication number 20200102667
- Publication date Apr 2, 2020
- TAMURA CORPORATION
- Ken GOTO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Vapor-Liquid Reaction Device, Reaction Tube, Film Forming Apparatus
- Publication number 20200071848
- Publication date Mar 5, 2020
- NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY
- Akinori Koukitu
- C01 - INORGANIC CHEMISTRY
Information Patent Application
GROUP III NITRIDE LAMINATE AND VERTICAL SEMICONDUCTOR DEVICE HAVING...
- Publication number 20190323146
- Publication date Oct 24, 2019
- STANLEY ELECTRIC CO., LTD
- Yoshinao KUMAGAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING GaN CRYSTAL
- Publication number 20190010605
- Publication date Jan 10, 2019
- MITSUBISHI CHEMICAL CORPORATION
- Kenji ISO
- C30 - CRYSTAL GROWTH
Information Patent Application
INDIUM GALLIUM NITRIDE LIGHT EMITTING DEVICES
- Publication number 20180269351
- Publication date Sep 20, 2018
- Soraa, Inc.
- Michael R. KRAMES
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH WITHSTAND VOLTAGE SCHOTTKY BARRIER DIODE
- Publication number 20180254355
- Publication date Sep 6, 2018
- TAMURA CORPORATION
- Kohei SASAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL LAMINATE STRUCTURE
- Publication number 20180073164
- Publication date Mar 15, 2018
- TAMURA CORPORATION
- Ken GOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR ELEMENT AND CRYSTALLINE LAMINATE STRUCTURE
- Publication number 20170278933
- Publication date Sep 28, 2017
- TAMURA CORPORATION
- Kohei SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE, EPITAXIAL WAFER, AND METHOD FOR MANUFACTUR...
- Publication number 20170145590
- Publication date May 25, 2017
- TAMURA CORPORATION
- Ken GOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR GROWING BETA-Ga2O3-BASED SINGLE CRYSTAL FILM, AND CRYSTA...
- Publication number 20160265137
- Publication date Sep 15, 2016
- TAMURA CORPORATION
- Ken GOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE SEMICONDUCTOR CRYSTAL, MANUFACTURING METHOD AND MANUFACTURI...
- Publication number 20160186361
- Publication date Jun 30, 2016
- NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY
- Akinori KOUKITU
- C30 - CRYSTAL GROWTH
Information Patent Application
INDIUM GALLIUM NITRIDE LIGHT EMITTING DEVICES
- Publication number 20140103356
- Publication date Apr 17, 2014
- Soraa, Inc.
- Michael R. KRAMES
- H01 - BASIC ELECTRIC ELEMENTS

Hisashi MURAKAMI

Person

Patents Grantslast 30 patents

Method for growing beta-Ga2O3-based single crystal film, and crysta...

Vapor-liquid reaction device, reaction tube, film forming apparatus

Method for producing GaN crystal

Crystal laminate structure

Semiconductor substrate, and epitaxial wafer and method for produci...

Method for producing GaN crystal

Semiconductor element and crystalline laminate structure

Group III nitride laminate and vertical semiconductor device having...

Semiconductor substrate, epitaxial wafer, and method for manufactur...

Crystal laminate structure

High voltage withstand Ga2O3-based single crystal schottky barrier...

Nitride semiconductor crystal, manufacturing method and manufacturi...

Indium gallium nitride light emitting devices

Preparation of carbonaceous products

Process for the production of solvent-refined coal useful as starti...

Process for liquefying coal

Patents Applicationslast 30 patents

METHOD FOR GROWING BETA-GA2O3-BASED SINGLE CRYSTAL FILM, AND CRYSTA...

METHOD FOR PRODUCING GaN CRYSTAL

Method of Manufacturing Crystalline Gallium Nitride Film

SEMICONDUCTOR SUBSTRATE, AND EPITAXIAL WAFER AND METHOD FOR PRODUCI...

CRYSTAL LAMINATE STRUCTURE

Vapor-Liquid Reaction Device, Reaction Tube, Film Forming Apparatus

GROUP III NITRIDE LAMINATE AND VERTICAL SEMICONDUCTOR DEVICE HAVING...

METHOD FOR PRODUCING GaN CRYSTAL

INDIUM GALLIUM NITRIDE LIGHT EMITTING DEVICES

HIGH WITHSTAND VOLTAGE SCHOTTKY BARRIER DIODE

CRYSTAL LAMINATE STRUCTURE

SEMICONDUCTOR ELEMENT AND CRYSTALLINE LAMINATE STRUCTURE

SEMICONDUCTOR SUBSTRATE, EPITAXIAL WAFER, AND METHOD FOR MANUFACTUR...

METHOD FOR GROWING BETA-Ga2O3-BASED SINGLE CRYSTAL FILM, AND CRYSTA...

NITRIDE SEMICONDUCTOR CRYSTAL, MANUFACTURING METHOD AND MANUFACTURI...

INDIUM GALLIUM NITRIDE LIGHT EMITTING DEVICES