Hisato Oyamatsu

Person

Yokohama-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetic memory device
- Patent number 9,041,130
- Issue date May 26, 2015
- Kabushiki Kaisha Toshiba
- Shinya Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing system for semiconductor device capable of controllin...
- Patent number 8,735,181
- Issue date May 27, 2014
- Kabushiki Kaisha Toshiba
- Osamu Fujii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having metal silicide layer on source/drain re...
- Patent number RE42180
- Issue date Mar 1, 2011
- Kabushiki Kaisha Toshiba
- Hisato Oyamatsu
- 257 - Active solid-state devices
Information Patent Grant
Semiconductor device having channel with cooling fluid and manufact...
- Patent number 7,741,159
- Issue date Jun 22, 2010
- Kabushiki Kaisha Toshiba
- Hisato Oyamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cooling semiconductor device and manufacturing method thereof
- Patent number 7,569,931
- Issue date Aug 4, 2009
- Kabushiki Kaisha Toshiba
- Hisato Oyamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device substrate including a single-crystalline layer...
- Patent number 7,521,300
- Issue date Apr 21, 2009
- Kabushiki Kaisha Toshiba
- Hajime Nagano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device using partial SOI substrate and manufacturing...
- Patent number 7,439,112
- Issue date Oct 21, 2008
- Kabushiki Kaisha Toshiba
- Hajime Nagano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising multiple layers with trenches forme...
- Patent number 7,187,035
- Issue date Mar 6, 2007
- Kabushiki Kaisha Toshiba
- Hajime Nagano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having metal silicide layer on source/drain re...
- Patent number 7,176,536
- Issue date Feb 13, 2007
- Kabushiki Kaisha Toshiba
- Hisato Oyamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor chip which combines bulk and SOI regions and separate...
- Patent number 7,148,543
- Issue date Dec 12, 2006
- Kabushiki Kaisha Toshiba
- Takashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device using partial SOI substrate and manufacturing...
- Patent number 7,112,822
- Issue date Sep 26, 2006
- Kabushiki Kaisha Toshiba
- Hajime Nagano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having patterned SOI structure and method for...
- Patent number 7,098,146
- Issue date Aug 29, 2006
- Kabushiki Kaisha Toshiba
- Hisato Oyamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor chip having multiple functional blocks integrated in...
- Patent number 7,018,904
- Issue date Mar 28, 2006
- Kabushiki Kaisha Toshiba
- Takashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having one of patterned SOI and SON structure
- Patent number 6,906,384
- Issue date Jun 14, 2005
- Kabushiki Kaisha Toshiba
- Takashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having patterned SOI structure and method for...
- Patent number 6,861,374
- Issue date Mar 1, 2005
- Kabushiki Kaisha Toshiba
- Hisato Oyamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device using partial SOI substrate and manufacturing...
- Patent number 6,855,976
- Issue date Feb 15, 2005
- Kabushiki Kaisha Toshiba
- Hajime Nagano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor chip which combines bulk and SOI regions and separate...
- Patent number 6,835,981
- Issue date Dec 28, 2004
- Kabushiki Kaisha Toshiba
- Takashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with an improved gate electrode pattern and a...
- Patent number 6,833,301
- Issue date Dec 21, 2004
- Kabushiki Kaisha Toshiba
- Hisato Oyamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing multilayer wiring structure semiconductor...
- Patent number 6,828,222
- Issue date Dec 7, 2004
- Kabushiki Kaisha Toshiba
- Hisato Oyamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device including a pluralit...
- Patent number 6,815,280
- Issue date Nov 9, 2004
- Kabushiki Kaisha Toshiba
- Hisato Oyamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,768,182
- Issue date Jul 27, 2004
- Kabushiki Kaisha Toshiba
- Hisato Oyamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a plurality of kinds of MOS transist...
- Patent number 6,734,506
- Issue date May 11, 2004
- Kabushiki Kaisha Toshiba
- Hisato Oyamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having patterned SOI structure and method for...
- Patent number 6,724,046
- Issue date Apr 20, 2004
- Kabushiki Kaisha Toshiba
- Hisato Oyamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with an improved gate electrode pattern
- Patent number 6,653,695
- Issue date Nov 25, 2003
- Kabushiki Kaisha Toshiba
- Hisato Oyamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing same
- Patent number 6,593,654
- Issue date Jul 15, 2003
- Kabushiki Kaisha Toshiba
- Hisato Oyamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer, method of manufacturing the same and semicondu...
- Patent number 6,525,402
- Issue date Feb 25, 2003
- Kabushiki Kaisha Toshiba
- Masahiko Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
N-channel MOSFET having STI structure and method for manufacturing...
- Patent number 6,261,920
- Issue date Jul 17, 2001
- Kabushiki Kaisha Toshiba
- Hisato Oyamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor apparatus and manufacturing method therefor
- Patent number 6,204,539
- Issue date Mar 20, 2001
- Kabushiki Kaisha Toshiba
- Hisato Oyamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of MOSFET having salicide structure
- Patent number 6,197,648
- Issue date Mar 6, 2001
- Kabushiki Kaisha Toshiba
- Kunihiro Kasai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having structure suitable for CMP process
- Patent number 6,091,130
- Issue date Jul 18, 2000
- Kabushiki Kaisha Toshiba
- Hisato Oyamatsu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20150228695
- Publication date Aug 13, 2015
- Kabushiki Kaisha Toshiba
- Shinya KOBAYASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20150069546
- Publication date Mar 12, 2015
- Kabushiki Kaisha Toshiba
- Shinya KOBAYASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20090269904
- Publication date Oct 29, 2009
- Kabushiki Kaisha Toshiba
- Hisato Oyamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING SYSTEM FOR SEMICONDUCTOR DEVICE CAPABLE OF CONTROLLIN...
- Publication number 20090114853
- Publication date May 7, 2009
- Kabushiki Kaisha Toshiba
- Osamu FUJII
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
- Publication number 20070267680
- Publication date Nov 22, 2007
- Kabushiki Kaisha Toshiba
- Yukinori Uchino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method thereof
- Publication number 20070117306
- Publication date May 24, 2007
- Kabushiki Kaisha Toshiba
- Hisato Oyamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device using partial SOI substrate and manufacturing...
- Publication number 20060273330
- Publication date Dec 7, 2006
- Hajime Nagano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device substrate and method of manufacturing semicond...
- Publication number 20060234478
- Publication date Oct 19, 2006
- Kabushiki Kaisha Toshiba
- Hajime Nagano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having patterned SOI structure and method for...
- Publication number 20050121722
- Publication date Jun 9, 2005
- HISATO OYAMATSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having metal silicide layer on source/drain re...
- Publication number 20050106833
- Publication date May 19, 2005
- Kabushiki Kaisha Toshiba
- Hisato Oyamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device using partial SOI substrate and manufacturing...
- Publication number 20050093066
- Publication date May 5, 2005
- Hajime Nagano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor chip having multiple functional blocks integrated in...
- Publication number 20050019999
- Publication date Jan 27, 2005
- KABUSHIKI KAISHA TOSHIBA
- Takashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20040227206
- Publication date Nov 18, 2004
- Kabushiki Kaisha Toshiba
- Hisato Oyamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor chip which combines bulk and SOI regions and separate...
- Publication number 20040195626
- Publication date Oct 7, 2004
- KABUSHIKI KAISHA TOSHIBA
- Takashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device including a plurality of kinds of MOS transist...
- Publication number 20040169235
- Publication date Sep 2, 2004
- Hisato Oyamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having patterned SOI structure and method for...
- Publication number 20040169226
- Publication date Sep 2, 2004
- HISATO OYAMATSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with an improved gate electrode pattern and a...
- Publication number 20040029327
- Publication date Feb 12, 2004
- KABUSHIKI KAISHA TOSHIBA
- Hisato Oyamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having one of patterned SOI and SON structure
- Publication number 20030201512
- Publication date Oct 30, 2003
- Takashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for manufacturing same
- Publication number 20030197275
- Publication date Oct 23, 2003
- Kabushiki Kaisha Toshiba
- Hisato Oyamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having one of patterned SOI and SON structure
- Publication number 20030151112
- Publication date Aug 14, 2003
- Takashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device using partial SOI substrate and manufacturing...
- Publication number 20030122124
- Publication date Jul 3, 2003
- Hajime Nagano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having patterned SOI structure and method for...
- Publication number 20030119228
- Publication date Jun 26, 2003
- HISATO OYAMATSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor wafer, method of manufacturing the same and semicondu...
- Publication number 20030102530
- Publication date Jun 5, 2003
- Kabushiki Kaisha Toshiba
- Masahiko Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device including a plurality of kinds of MOS transist...
- Publication number 20030071279
- Publication date Apr 17, 2003
- Hisato Oyamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device substrate and method of manufacturing semicond...
- Publication number 20030057490
- Publication date Mar 27, 2003
- Kabushiki Kaisha Toshiba
- Hajime Nagano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor chip having multiple functional blocks integrated in...
- Publication number 20030057487
- Publication date Mar 27, 2003
- Kabushiki Kaisha Toshiba
- Takashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20020070455
- Publication date Jun 13, 2002
- HISATO OYAMATSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A SEMICONDUCTOR DEVICE WITH AN IMPROVED GATE ELECTRODE PATTERN AND...
- Publication number 20020030236
- Publication date Mar 14, 2002
- Hisato Oyamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20020024112
- Publication date Feb 28, 2002
- Hisato Oyamatsu
- H01 - BASIC ELECTRIC ELEMENTS

Hisato Oyamatsu

Person

Patents Grantslast 30 patents

Magnetic memory device

Manufacturing system for semiconductor device capable of controllin...

Semiconductor device having metal silicide layer on source/drain re...

Semiconductor device having channel with cooling fluid and manufact...

Cooling semiconductor device and manufacturing method thereof

Semiconductor device substrate including a single-crystalline layer...

Semiconductor device using partial SOI substrate and manufacturing...

Semiconductor device comprising multiple layers with trenches forme...

Semiconductor device having metal silicide layer on source/drain re...

Semiconductor chip which combines bulk and SOI regions and separate...

Semiconductor device using partial SOI substrate and manufacturing...

Semiconductor device having patterned SOI structure and method for...

Semiconductor chip having multiple functional blocks integrated in...

Semiconductor device having one of patterned SOI and SON structure

Semiconductor device having patterned SOI structure and method for...

Semiconductor device using partial SOI substrate and manufacturing...

Semiconductor chip which combines bulk and SOI regions and separate...

Semiconductor device with an improved gate electrode pattern and a...

Method for manufacturing multilayer wiring structure semiconductor...

Method of manufacturing a semiconductor device including a pluralit...

Semiconductor device

Semiconductor device including a plurality of kinds of MOS transist...

Semiconductor device having patterned SOI structure and method for...

Semiconductor device with an improved gate electrode pattern

Semiconductor device and method for manufacturing same

Semiconductor wafer, method of manufacturing the same and semicondu...

N-channel MOSFET having STI structure and method for manufacturing...

Semiconductor apparatus and manufacturing method therefor

Manufacturing method of MOSFET having salicide structure

Semiconductor device having structure suitable for CMP process

Patents Applicationslast 30 patents

MAGNETIC MEMORY DEVICE

MAGNETIC MEMORY DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

MANUFACTURING SYSTEM FOR SEMICONDUCTOR DEVICE CAPABLE OF CONTROLLIN...

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

Semiconductor device and manufacturing method thereof

Semiconductor device using partial SOI substrate and manufacturing...

Semiconductor device substrate and method of manufacturing semicond...

Semiconductor device having patterned SOI structure and method for...

Semiconductor device having metal silicide layer on source/drain re...

Semiconductor device using partial SOI substrate and manufacturing...

Semiconductor chip having multiple functional blocks integrated in...

Semiconductor device

Semiconductor chip which combines bulk and SOI regions and separate...

Semiconductor device including a plurality of kinds of MOS transist...

Semiconductor device having patterned SOI structure and method for...

Semiconductor device with an improved gate electrode pattern and a...

Semiconductor device having one of patterned SOI and SON structure

Semiconductor device and method for manufacturing same

Semiconductor device having one of patterned SOI and SON structure

Semiconductor device using partial SOI substrate and manufacturing...

Semiconductor device having patterned SOI structure and method for...

Semiconductor wafer, method of manufacturing the same and semicondu...

Semiconductor device including a plurality of kinds of MOS transist...

Semiconductor device substrate and method of manufacturing semicond...

Semiconductor chip having multiple functional blocks integrated in...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

A SEMICONDUCTOR DEVICE WITH AN IMPROVED GATE ELECTRODE PATTERN AND...

Semiconductor device