Hoki Kwon

Person

Plymouth, MN, US

People

Patents Grantslast 30 patents

Information Patent Grant
AlAs/GaAs alloy to enhance n-type doping in AlGaAs distributed brag...
- Patent number 7,545,560
- Issue date Jun 9, 2009
- Finisar Corporation
- Hoki Kwon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
InP based long wavelength VCSEL
- Patent number 7,433,381
- Issue date Oct 7, 2008
- Finisar Corporation
- Tzu-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Carbon doped GaAsSb suitable for use in tunnel junctions of long-wa...
- Patent number 7,295,586
- Issue date Nov 13, 2007
- Finisar Corporation
- Hoki Kwon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Carrier bonded 1550 nm VCSEL with InP substrate removal
- Patent number 7,286,584
- Issue date Oct 23, 2007
- Finisar Corporation
- Tzu-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced lateral oxidation
- Patent number 7,054,345
- Issue date May 30, 2006
- Finisar Corporation
- Jae-Hyun Ryou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Material system for Bragg reflectors in long wavelength VCSELs
- Patent number 6,901,096
- Issue date May 31, 2005
- Finisar Corporation
- Hoki Kwon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Long wavelength VCSEL bottom mirror
- Patent number 6,888,873
- Issue date May 3, 2005
- Finisar Corporation
- Hoki Kwon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaAs/AI(Ga)As distributed bragg reflector on InP
- Patent number 6,822,995
- Issue date Nov 23, 2004
- Finisar Corporation
- Hoki Kwon
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
AlAs/GaAs alloy to enhance n-type doping in AlGaAs distributed brag...
- Publication number 20060078026
- Publication date Apr 13, 2006
- Finisar
- Hoki Kwon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Carrier bonded 1550 nm VCSEL with InP substrate removal
- Publication number 20050243886
- Publication date Nov 3, 2005
- Honeywell International Inc.
- Tzu-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DBR using the combination of II-VI and III-V materials for the appl...
- Publication number 20050243887
- Publication date Nov 3, 2005
- Honeywell International Inc.
- Hoki Kwon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
InAlAs having enhanced oxidation rate grown under very low V/III ratio
- Publication number 20050243881
- Publication date Nov 3, 2005
- Hoki Kwon
- B82 - NANO-TECHNOLOGY
Information Patent Application
Enhanced lateral oxidation
- Publication number 20040264531
- Publication date Dec 30, 2004
- Honeywell International Inc.
- Jae-Hyun Ryou
- B82 - NANO-TECHNOLOGY
Information Patent Application
InP based long wavelength VCSEL
- Publication number 20040264541
- Publication date Dec 30, 2004
- Honeywell International Inc.
- Tzu-Yu Wang
- B82 - NANO-TECHNOLOGY
Information Patent Application
Material system for Bragg reflectors in long wavelength VCSELs
- Publication number 20040120375
- Publication date Jun 24, 2004
- Hoki Kwon
- B82 - NANO-TECHNOLOGY
Information Patent Application
Carbon doped GaAsSb suitable for use in tunnel junctions of long-wa...
- Publication number 20030156610
- Publication date Aug 21, 2003
- Hoki Kwon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaAs/Al(Ga)As distributed bragg reflector on InP
- Publication number 20030156611
- Publication date Aug 21, 2003
- Hoki Kwon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Long wavelength VCSEL bottom mirror
- Publication number 20030156616
- Publication date Aug 21, 2003
- Hoki Kwon
- B82 - NANO-TECHNOLOGY

Person

Patents Grantslast 30 patents

AlAs/GaAs alloy to enhance n-type doping in AlGaAs distributed brag...

InP based long wavelength VCSEL

Carbon doped GaAsSb suitable for use in tunnel junctions of long-wa...

Carrier bonded 1550 nm VCSEL with InP substrate removal

Enhanced lateral oxidation

Material system for Bragg reflectors in long wavelength VCSELs

Long wavelength VCSEL bottom mirror

GaAs/AI(Ga)As distributed bragg reflector on InP

Patents Applicationslast 30 patents

AlAs/GaAs alloy to enhance n-type doping in AlGaAs distributed brag...

Carrier bonded 1550 nm VCSEL with InP substrate removal

DBR using the combination of II-VI and III-V materials for the appl...

InAlAs having enhanced oxidation rate grown under very low V/III ratio

Enhanced lateral oxidation

InP based long wavelength VCSEL

Material system for Bragg reflectors in long wavelength VCSELs

Carbon doped GaAsSb suitable for use in tunnel junctions of long-wa...

GaAs/Al(Ga)As distributed bragg reflector on InP

Long wavelength VCSEL bottom mirror