HONG YANG

Person

RICHARDSON, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Trench shield isolation layer
- Patent number 11,791,198
- Issue date Oct 17, 2023
- Texas Instruments Incorporated
- Hong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical trench gate MOSFET with integrated Schottky diode
- Patent number 11,658,241
- Issue date May 23, 2023
- Texas Instruments Incorporated
- Sunglyong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a tungsten plug in a semiconductor device
- Patent number 11,532,560
- Issue date Dec 20, 2022
- Texas Instruments Incorporated
- Yunlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual shield oxide damage control
- Patent number 11,417,736
- Issue date Aug 16, 2022
- Texas Instruments Incorporated
- Peng Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a lateral insulator
- Patent number 11,322,594
- Issue date May 3, 2022
- Texas Instruments Incorporated
- Fei Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench shield isolation layer
- Patent number 11,302,568
- Issue date Apr 12, 2022
- Texas Instruments Incorporated
- Hong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical trench gate MOSFET with deep well region for junction term...
- Patent number 11,127,852
- Issue date Sep 21, 2021
- Texas Instruments Incorporated
- Sunglyong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device with sinker contacts and methods for manufacturin...
- Patent number 11,037,816
- Issue date Jun 15, 2021
- Texas Instruments Incorporated
- Hong Yang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Power MOSFET with metal filled deep sinker contact for CSP
- Patent number 10,903,345
- Issue date Jan 26, 2021
- Texas Instruments Incorporated
- Yufei Xiong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having polysilicon field plate for power MOSFETs
- Patent number 10,720,499
- Issue date Jul 21, 2020
- Texas Instruments Incorporated
- Ya ping Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor product and fabrication process
- Patent number 10,573,553
- Issue date Feb 25, 2020
- Texas Instruments Incorporated
- Hong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple shielding trench gate FET
- Patent number 10,541,326
- Issue date Jan 21, 2020
- Texas Instruments Incorporated
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High quality deep trench oxide
- Patent number 10,347,626
- Issue date Jul 9, 2019
- Texas Instruments Incorporated
- Yufei Xiong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor product and fabrication process
- Patent number 10,211,096
- Issue date Feb 19, 2019
- Texas Instruments Incorporated
- Hong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance sinker contact
- Patent number 9,991,350
- Issue date Jun 5, 2018
- Texas Instruments Incorporated
- Hong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET with metal filled deep sinker contact for CSP
- Patent number 9,865,718
- Issue date Jan 9, 2018
- Texas Instruments Incorporated
- Yufei Xiong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High quality deep trench oxide
- Patent number 9,825,030
- Issue date Nov 21, 2017
- Texas Instruments Incorporated
- Yufei Xiong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor and method of making
- Patent number 9,825,138
- Issue date Nov 21, 2017
- Texas Instruments Incorporated
- Hong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple shielding trench gate FET
- Patent number 9,711,639
- Issue date Jul 18, 2017
- Texas Instruments Incorporated
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench having thick dielectric selectively on bottom portion
- Patent number 9,653,342
- Issue date May 16, 2017
- Texas Instruments Incorporated
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High quality deep trench oxide
- Patent number 9,461,131
- Issue date Oct 4, 2016
- Texas Instruments Incorporated
- Yufei Xiong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC having failsafe fuse on field dielectric
- Patent number 9,455,222
- Issue date Sep 27, 2016
- Texas Instruments Incorporated
- Hideaki Kawahara
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Field effect transistor and method of making
- Patent number 9,406,774
- Issue date Aug 2, 2016
- Texas Instruments Incorporated
- Hong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance sinker contact
- Patent number 9,397,180
- Issue date Jul 19, 2016
- Texas Instruments Incorporated
- Hong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple shielding trench gate fet
- Patent number 9,299,830
- Issue date Mar 29, 2016
- Texas Instruments Incorporated
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of polysilicon residue in a trench for polysilicon trench...
- Patent number 9,230,851
- Issue date Jan 5, 2016
- Texas Instruments Incorporated
- Simon John Molloy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual RESURF trench field plate in vertical MOSFET
- Patent number 8,748,976
- Issue date Jun 10, 2014
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hydrogen treatment for threshold voltage shift of metal gate MOSFET...
- Patent number 6,420,236
- Issue date Jul 16, 2002
- Texas Instruments Incorporated
- Jerry C. Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabrication of a raised source/drain transistor
- Patent number 6,100,161
- Issue date Aug 8, 2000
- Chartered Semiconductor Manufacturing Ltd.
- Xing Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form CoSi.sub.2 on shallow junction by Si implantation
- Patent number 6,096,647
- Issue date Aug 1, 2000
- Chartered Semiconductor Manufacturing Ltd.
- Hong Yang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRENCH SHIELDED TRANSISTOR
- Publication number 20240113217
- Publication date Apr 4, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Hong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRENCH GATE MOSFET WITH INTEGRATED SCHOTTKY DIODE
- Publication number 20230246107
- Publication date Aug 3, 2023
- TEXAS INSTRUMENTS INCORPORATED
- SUNGLYONG KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD PLATE ARRANGEMENT FOR TRENCH GATE FET
- Publication number 20230087151
- Publication date Mar 23, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Thomas Grebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRENCH GATE FET WITH SPLIT GATE
- Publication number 20220223731
- Publication date Jul 14, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Sunglyong KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH SHIELD ISOLATION LAYER
- Publication number 20220208601
- Publication date Jun 30, 2022
- TEXAS INSTRUMENTS INCORPORATED
- HONG YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL SHIELD OXIDE DAMAGE CONTROL
- Publication number 20220093754
- Publication date Mar 24, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Peng Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A LATERAL INSULATOR
- Publication number 20220052165
- Publication date Feb 17, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Fei Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE WITH SINKER CONTACTS AND METHODS FOR MANUFACTURIN...
- Publication number 20210272842
- Publication date Sep 2, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Hong YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING POLYSILICON FIELD PLATE FOR POWER MOSFETS
- Publication number 20200335589
- Publication date Oct 22, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Ya ping Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH SHIELD ISOLATION LAYER
- Publication number 20200312710
- Publication date Oct 1, 2020
- TEXAS INSTRUMENTS INCORPORATED
- HONG YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRENCH GATE MOSFET WITH DEEP WELL REGION FOR JUNCTION TERM...
- Publication number 20200212218
- Publication date Jul 2, 2020
- TEXAS INSTRUMENTS INCORPORATED
- SUNGLYONG KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRENCH GATE MOSFET WITH INTEGRATED SCHOTTKY DIODE
- Publication number 20200212219
- Publication date Jul 2, 2020
- TEXAS INSTRUMENTS INCORPORATED
- SUNGLYONG KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING POLYSILICON FIELD PLATE FOR POWER MOSFETS
- Publication number 20190296115
- Publication date Sep 26, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Ya ping Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR PRODUCT AND FABRICATION PROCESS
- Publication number 20190157142
- Publication date May 23, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Hong YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE WITH SINKER CONTACTS AND METHODS FOR MANUFACTURIN...
- Publication number 20180261495
- Publication date Sep 13, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Hong YANG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Power MOSFET With Metal Filled Deep Sinker Contact For CSP
- Publication number 20180102424
- Publication date Apr 12, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Yufei XIONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH QUALITY DEEP TRENCH OXIDE
- Publication number 20180061828
- Publication date Mar 1, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Yufei XIONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER MOSFET WITH METAL FILLED DEEP SINKER CONTACT FOR CSP
- Publication number 20180006145
- Publication date Jan 4, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Yufei XIONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multiple Shielding Trench Gate FET
- Publication number 20170288052
- Publication date Oct 5, 2017
- TEXAS INSTRUMENTS INCORPORATED
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH HAVING THICK DIELECTRIC SELECTIVELY ON BOTTOM PORTION
- Publication number 20170222041
- Publication date Aug 3, 2017
- TEXAS INSTRUMENTS INCORPORATED
- HIDEAKI KAWAHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH QUALITY DEEP TRENCH OXIDE
- Publication number 20160372463
- Publication date Dec 22, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Yufei XIONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multiple Shielding Trench Gate FET
- Publication number 20160329423
- Publication date Nov 10, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR AND METHOD OF MAKING
- Publication number 20160315155
- Publication date Oct 27, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Hong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTANCE SINKER CONTACT
- Publication number 20160315159
- Publication date Oct 27, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Hong YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH HAVING THICK DIELECTRIC SELECTIVELY ON BOTTOM PORTION
- Publication number 20160141204
- Publication date May 19, 2016
- TEXAS INSTRUMENTS INCORPORATED
- HIDEAKI KAWAHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A TUNGSTEN PLUG IN A SEMICONDUCTOR DEVICE
- Publication number 20160126193
- Publication date May 5, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Yunlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCTION OF POLYSILICON RESIDUE IN A TRENCH FOR POLYSILICON TRENCH...
- Publication number 20140220761
- Publication date Aug 7, 2014
- TEXAS INSTRUMENTS INCORPORATED
- SIMON JOHN MOLLOY
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Trench shield isolation layer

Vertical trench gate MOSFET with integrated Schottky diode

Method of fabricating a tungsten plug in a semiconductor device

Dual shield oxide damage control

Semiconductor device including a lateral insulator

Trench shield isolation layer

Vertical trench gate MOSFET with deep well region for junction term...

Transistor device with sinker contacts and methods for manufacturin...

Power MOSFET with metal filled deep sinker contact for CSP

Semiconductor device having polysilicon field plate for power MOSFETs

Semiconductor product and fabrication process

Multiple shielding trench gate FET

High quality deep trench oxide

Semiconductor product and fabrication process

Low resistance sinker contact

Power MOSFET with metal filled deep sinker contact for CSP

High quality deep trench oxide

Field effect transistor and method of making

Multiple shielding trench gate FET

Trench having thick dielectric selectively on bottom portion

High quality deep trench oxide

IC having failsafe fuse on field dielectric

Field effect transistor and method of making

Low resistance sinker contact

Multiple shielding trench gate fet

Reduction of polysilicon residue in a trench for polysilicon trench...

Dual RESURF trench field plate in vertical MOSFET

Hydrogen treatment for threshold voltage shift of metal gate MOSFET...

Method of fabrication of a raised source/drain transistor

Method to form CoSi.sub.2 on shallow junction by Si implantation

Patents Applicationslast 30 patents

TRENCH SHIELDED TRANSISTOR

VERTICAL TRENCH GATE MOSFET WITH INTEGRATED SCHOTTKY DIODE

FIELD PLATE ARRANGEMENT FOR TRENCH GATE FET

VERTICAL TRENCH GATE FET WITH SPLIT GATE

TRENCH SHIELD ISOLATION LAYER

DUAL SHIELD OXIDE DAMAGE CONTROL

SEMICONDUCTOR DEVICE INCLUDING A LATERAL INSULATOR

TRANSISTOR DEVICE WITH SINKER CONTACTS AND METHODS FOR MANUFACTURIN...

SEMICONDUCTOR DEVICE HAVING POLYSILICON FIELD PLATE FOR POWER MOSFETS

TRENCH SHIELD ISOLATION LAYER

VERTICAL TRENCH GATE MOSFET WITH DEEP WELL REGION FOR JUNCTION TERM...

VERTICAL TRENCH GATE MOSFET WITH INTEGRATED SCHOTTKY DIODE

SEMICONDUCTOR DEVICE HAVING POLYSILICON FIELD PLATE FOR POWER MOSFETS

SEMICONDUCTOR PRODUCT AND FABRICATION PROCESS

TRANSISTOR DEVICE WITH SINKER CONTACTS AND METHODS FOR MANUFACTURIN...

Power MOSFET With Metal Filled Deep Sinker Contact For CSP

HIGH QUALITY DEEP TRENCH OXIDE

POWER MOSFET WITH METAL FILLED DEEP SINKER CONTACT FOR CSP

Multiple Shielding Trench Gate FET

TRENCH HAVING THICK DIELECTRIC SELECTIVELY ON BOTTOM PORTION

HIGH QUALITY DEEP TRENCH OXIDE

Multiple Shielding Trench Gate FET

FIELD EFFECT TRANSISTOR AND METHOD OF MAKING

LOW RESISTANCE SINKER CONTACT

TRENCH HAVING THICK DIELECTRIC SELECTIVELY ON BOTTOM PORTION

METHOD OF FABRICATING A TUNGSTEN PLUG IN A SEMICONDUCTOR DEVICE

REDUCTION OF POLYSILICON RESIDUE IN A TRENCH FOR POLYSILICON TRENCH...