Hong Ying

Person

Cupertino, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Alternate pad structures/passivation inegration schemes to reduce o...
- Patent number 8,552,560
- Issue date Oct 8, 2013
- LSI Corporation
- Hemanshu Bhatt
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Reduction of macro level stresses in copper/low-K wafers
- Patent number 8,076,779
- Issue date Dec 13, 2011
- LSI Corporation
- Sey-Shing Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Eliminate IMC cracking in post wirebonded dies: macro level stress...
- Patent number 7,531,442
- Issue date May 12, 2009
- LSI Corporation
- Jayanthi Pallinti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduce or eliminate IMC cracking in post wire bonded dies by doping...
- Patent number 7,205,673
- Issue date Apr 17, 2007
- LSI Logic Corporation
- Jayanthi Pallinti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for electrically characterizing charge sensitive semiconduct...
- Patent number 6,858,530
- Issue date Feb 22, 2005
- International Business Machines Corporation
- Terence Kane
- G01 - MEASURING TESTING
Information Patent Grant
Electrode materials with improved hydrogen degradation resistance
- Patent number 6,833,572
- Issue date Dec 21, 2004
- Sharp Laboratories of America, Inc.
- Fengyan Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance metal interconnect lines and a process for fabricati...
- Patent number 6,815,342
- Issue date Nov 9, 2004
- LSI Logic Corporation
- Chuan-cheng Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device using titanium doped aluminum oxide for passivati...
- Patent number 6,759,252
- Issue date Jul 6, 2004
- Sharp Laboratories of America, Inc.
- Fengyan Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MFMOS capacitors with high dielectric constant materials
- Patent number 6,716,645
- Issue date Apr 6, 2004
- Sharp Laboratories of America, Inc.
- Tingkai Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for charge sensitive electrical devices
- Patent number 6,670,717
- Issue date Dec 30, 2003
- International Business Machines Corporation
- Terence Kane
- G01 - MEASURING TESTING
Information Patent Grant
Method of using titanium doped aluminum oxide for passivation of fe...
- Patent number 6,630,702
- Issue date Oct 7, 2003
- Sharp Laboratories of America, Inc.
- Fengyan Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating high performance SiGe heterojunction bipolar...
- Patent number 6,555,874
- Issue date Apr 29, 2003
- Sharp Laboratories of America, Inc.
- Sheng Teng Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for plasma etching of Ir-Ta-O electrode and for post-etch cl...
- Patent number 6,541,385
- Issue date Apr 1, 2003
- Sharp Laboratories of America, Inc.
- Hong Ying
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making MFMOS capacitors with high dielectric constant mat...
- Patent number 6,503,763
- Issue date Jan 7, 2003
- Sharp Laboratories of America, Inc.
- Tingkai Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrode materials with improved hydrogen degradation resistance a...
- Patent number 6,440,752
- Issue date Aug 27, 2002
- Sharp Laboratories of America, Inc.
- Fengyan Zhang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ALTERNATE PAD STRUCTURES/PASSIVATION INTEGRATION SCHEMES TO REDUCE...
- Publication number 20140030541
- Publication date Jan 30, 2014
- LSI Corporation
- Hemanshu Bhatt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Eliminate IMC cracking in post wirebonded dies: macro level stress...
- Publication number 20070123024
- Publication date May 31, 2007
- LSI Logic Corporation
- Jayanthi Pallinti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Alternate pad structures/passivation inegration schemes to reduce o...
- Publication number 20070114667
- Publication date May 24, 2007
- LSI Logic Corporation
- Hemanshu Bhatt
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Application
Reduction of macro level stresses in copper/Low-K wafers by alterin...
- Publication number 20070102812
- Publication date May 10, 2007
- LSI Logic Corporation
- Sey-Shing Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and method for charge sensitive electrical devices
- Publication number 20040089952
- Publication date May 13, 2004
- Terence Kane
- G01 - MEASURING TESTING
Information Patent Application
Method and device using titanium doped aluminum oxide for passivati...
- Publication number 20040056276
- Publication date Mar 25, 2004
- Fengyan Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MFMOS capacitors with high dielectric constant materials
- Publication number 20030119242
- Publication date Jun 26, 2003
- Sharp Laboratories of America, Inc.
- Tingkai Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and method for charge sensitive electrical devices
- Publication number 20030071361
- Publication date Apr 17, 2003
- International Business Machines Corporation
- Terence Kane
- G01 - MEASURING TESTING
Information Patent Application
Electrode materials with improved hydrogen degradation resistance
- Publication number 20030007319
- Publication date Jan 9, 2003
- Fengyan Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for plasma etching of Ir-Ta-O electrode and for post-etch cl...
- Publication number 20020187645
- Publication date Dec 12, 2002
- Hong Ying
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Application
Method of using titanium doped aluminum oxide for passivation of fe...
- Publication number 20020140011
- Publication date Oct 3, 2002
- Fengyan Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MFMOS capacitors with high dielectric constant materials and a meth...
- Publication number 20020142487
- Publication date Oct 3, 2002
- Tingkai Li
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Alternate pad structures/passivation inegration schemes to reduce o...

Reduction of macro level stresses in copper/low-K wafers

Eliminate IMC cracking in post wirebonded dies: macro level stress...

Reduce or eliminate IMC cracking in post wire bonded dies by doping...

Method for electrically characterizing charge sensitive semiconduct...

Electrode materials with improved hydrogen degradation resistance

Low resistance metal interconnect lines and a process for fabricati...

Method and device using titanium doped aluminum oxide for passivati...

MFMOS capacitors with high dielectric constant materials

Structure and method for charge sensitive electrical devices

Method of using titanium doped aluminum oxide for passivation of fe...

Method of fabricating high performance SiGe heterojunction bipolar...

Method for plasma etching of Ir-Ta-O electrode and for post-etch cl...

Method of making MFMOS capacitors with high dielectric constant mat...

Electrode materials with improved hydrogen degradation resistance a...

Patents Applicationslast 30 patents

ALTERNATE PAD STRUCTURES/PASSIVATION INTEGRATION SCHEMES TO REDUCE...

Eliminate IMC cracking in post wirebonded dies: macro level stress...

Alternate pad structures/passivation inegration schemes to reduce o...

Reduction of macro level stresses in copper/Low-K wafers by alterin...

Structure and method for charge sensitive electrical devices

Method and device using titanium doped aluminum oxide for passivati...

MFMOS capacitors with high dielectric constant materials

Structure and method for charge sensitive electrical devices

Electrode materials with improved hydrogen degradation resistance

Method for plasma etching of Ir-Ta-O electrode and for post-etch cl...

Method of using titanium doped aluminum oxide for passivation of fe...

MFMOS capacitors with high dielectric constant materials and a meth...