Hong Yu

Person

Rexford, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
High-voltage semiconductor device structures
- Patent number 12,205,949
- Issue date Jan 21, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Zhenyu Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor structure on semiconductor fin and methods to fo...
- Patent number 12,176,426
- Issue date Dec 24, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single fin structures
- Patent number 12,107,154
- Issue date Oct 1, 2024
- GLOBALFOUNDRIES Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistors
- Patent number 12,040,388
- Issue date Jul 16, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Carbon implantation for thicker gate silicide
- Patent number 12,020,937
- Issue date Jun 25, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Jianwei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar junction transistors with an airgap spacer
- Patent number 11,967,636
- Issue date Apr 23, 2024
- Global Foundries U.S. Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with thermal conductor
- Patent number 11,942,534
- Issue date Mar 26, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with collector contact
- Patent number 11,935,927
- Issue date Mar 19, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with self-aligned asymmetric spacer
- Patent number 11,935,928
- Issue date Mar 19, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar junction transistors with a back-gate
- Patent number 11,923,417
- Issue date Mar 5, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor structure with base layer of varying hor...
- Patent number 11,908,898
- Issue date Feb 20, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-based lateral bipolar junction transistor and method
- Patent number 11,888,031
- Issue date Jan 30, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor structure on semiconductor fin and methods to fo...
- Patent number 11,881,395
- Issue date Jan 23, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor structure on semiconductor fin and methods to fo...
- Patent number 11,843,044
- Issue date Dec 12, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-on-insulator field effect transistor with performance...
- Patent number 11,810,951
- Issue date Nov 7, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Jianwei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor structure with emitter/collector contact to dope...
- Patent number 11,804,541
- Issue date Oct 31, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor structure with base over semiconductor b...
- Patent number 11,784,224
- Issue date Oct 10, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral heterojunction bipolar transistor with improved breakdown v...
- Patent number 11,777,019
- Issue date Oct 3, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistors including wrap-around emitter and coll...
- Patent number 11,769,806
- Issue date Sep 26, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistors with duplicated terminals
- Patent number 11,749,727
- Issue date Sep 5, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single fin structures
- Patent number 11,705,508
- Issue date Jul 18, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate cut isolation including air gap, integrated circuit including...
- Patent number 11,610,965
- Issue date Mar 21, 2023
- GLOBALFOUNDRIES U.S. INC.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming transistor devices comprising a single semicondu...
- Patent number 11,349,030
- Issue date May 31, 2022
- GLOBALFOUNDRIES U.S. INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming an IC product comprising transistor devices with...
- Patent number 11,315,835
- Issue date Apr 26, 2022
- GLOBALFOUNDRIES U.S. INC.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Active and dummy fin structures
- Patent number 11,264,504
- Issue date Mar 1, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure with niobium-based silicide layer and...
- Patent number 11,239,336
- Issue date Feb 1, 2022
- GLOBALFOUNDRIES U.S. INC.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC structure with single active region having different doping prof...
- Patent number 11,205,648
- Issue date Dec 21, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Anton V. Tokranov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC structure with short channel gate structure having shorter gate...
- Patent number 11,195,761
- Issue date Dec 7, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single fin structures
- Patent number 11,127,842
- Issue date Sep 21, 2021
- GLOBALFOUNDRIES U.S. INC.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device comprising a single diffusion break with an upper sur...
- Patent number 11,121,023
- Issue date Sep 14, 2021
- GLOBALFOUNDRIES U.S. INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CIRCUIT WITH FINFET WITH SHORTER AND NARROWER FIN UNDER...
- Publication number 20250040237
- Publication date Jan 30, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Vitor A. Vulcano Rossi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND FIELD EFFECT TRANSISTORS
- Publication number 20250040167
- Publication date Jan 30, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Navneet K. Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURE HAVING DIFFERENT LINERS ON UPPER AND LOWER PORT...
- Publication number 20250029869
- Publication date Jan 23, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Jianwei PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-TYPE FIELD EFFECT TRANSISTOR WITH INDEPENDENTLY BIASABLE SUPPLE...
- Publication number 20250031439
- Publication date Jan 23, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING DIFFUSION BREAK STRUCTURE AND METHOD...
- Publication number 20240429237
- Publication date Dec 26, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Anton TOKRANOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WRAPAROUND GATE STRUCTURE
- Publication number 20240395932
- Publication date Nov 28, 2024
- GLOBALFOUNDRIES U.S. Inc.
- John L. LEMON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET STRUCTURES WITH TUNABLE CHANNELS AND INNER SIDEWALL SPACERS
- Publication number 20240387668
- Publication date Nov 21, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-FIN FIN-TYPE FIELD EFFECT TRANSISTOR WITH FINE-TUNED EFFECTIV...
- Publication number 20240347638
- Publication date Oct 17, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Navneet K. Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH DIFFERENT SIZED EPITAXIAL STRUCTURES
- Publication number 20240313054
- Publication date Sep 19, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Jianwei PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH ISOLATION REGION INCLUDING COMBINATION...
- Publication number 20240313113
- Publication date Sep 19, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Anton V. Tokranov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR TRANSISTORS
- Publication number 20240297242
- Publication date Sep 5, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STANDARD CELL AND IC STRUCTURE WITH TRENCH ISOLATION THROUGH ACTIVE...
- Publication number 20240274603
- Publication date Aug 15, 2024
- GLOBALFOUNDRIES U.S. Inc.
- David Charles Pritchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL CAPACITORS OF SEMICONDUCTOR DEVICES
- Publication number 20240234448
- Publication date Jul 11, 2024
- GLOBALFOUNDRIES U.S. Inc.
- DAVID PRITCHARD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTOR ARRAYS
- Publication number 20240170560
- Publication date May 23, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Alexander Derrickson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ARRAY ARRANGEMENTS OF VERTICAL BIPOLAR JUNCTION TRANSISTORS
- Publication number 20240172455
- Publication date May 23, 2024
- GLOBALFOUNDRIES U.S. Inc.
- John J. Pekarik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURES OF SEMICONDUCTOR DEVICES
- Publication number 20240120373
- Publication date Apr 11, 2024
- GLOBALFOUNDRIES U.S. Inc.
- HONG YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATES OF SEMICONDUCTOR DEVICES HAVING VARYING THICKNESSES OF S...
- Publication number 20240063225
- Publication date Feb 22, 2024
- GLOBALFOUNDRIES U.S. Inc.
- DAVID PRITCHARD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING FIELD EFFECT TRANSISTOR WITH SCAL...
- Publication number 20240047555
- Publication date Feb 8, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Anton V. Tokranov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-CHANNEL REPLACEMENT METAL GATE DEVICE
- Publication number 20230395715
- Publication date Dec 7, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Haiting WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE HAVING DIFFERENT GATE DIELECTRIC WIDTHS IN DIFFERENT REGI...
- Publication number 20230326924
- Publication date Oct 12, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Anton V. Tokranov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARBON IMPLANTATION FOR THICKER GATE SILICIDE
- Publication number 20230307238
- Publication date Sep 28, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Jianwei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE FIN STRUCTURES
- Publication number 20230299181
- Publication date Sep 21, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Haiting WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR WITH THERMAL CONDUCTOR
- Publication number 20230290868
- Publication date Sep 14, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR WITH SELF-ALIGNED ASYMMETRIC SPACER
- Publication number 20230268401
- Publication date Aug 24, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH MULTIPLE SILICIDE LAYERS
- Publication number 20230261088
- Publication date Aug 17, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN ON SILICON ON INSULATOR AND INTEGRATION SCHEMES
- Publication number 20230238452
- Publication date Jul 27, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR STRUCTURE WITH EMITTER/COLLECTOR CONTACT TO DOPE...
- Publication number 20230231040
- Publication date Jul 20, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR STRUCTURE ON SEMICONDUCTOR FIN AND METHODS TO FO...
- Publication number 20230223462
- Publication date Jul 13, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON GERMANIUM FINS AND INTEGRATION METHODS
- Publication number 20230197849
- Publication date Jun 22, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR-ON-INSULATOR FIELD EFFECT TRANSISTOR WITH PERFORMANCE...
- Publication number 20230197783
- Publication date Jun 22, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Jianwei Peng
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

High-voltage semiconductor device structures

Bipolar transistor structure on semiconductor fin and methods to fo...

Single fin structures

Lateral bipolar transistors

Carbon implantation for thicker gate silicide

Lateral bipolar junction transistors with an airgap spacer

Bipolar transistor with thermal conductor

Bipolar transistor with collector contact

Bipolar transistor with self-aligned asymmetric spacer

Lateral bipolar junction transistors with a back-gate

Lateral bipolar transistor structure with base layer of varying hor...

Fin-based lateral bipolar junction transistor and method

Bipolar transistor structure on semiconductor fin and methods to fo...

Bipolar transistor structure on semiconductor fin and methods to fo...

Semiconductor-on-insulator field effect transistor with performance...

Bipolar transistor structure with emitter/collector contact to dope...

Lateral bipolar transistor structure with base over semiconductor b...

Lateral heterojunction bipolar transistor with improved breakdown v...

Bipolar junction transistors including wrap-around emitter and coll...

Bipolar junction transistors with duplicated terminals

Single fin structures

Gate cut isolation including air gap, integrated circuit including...

Methods of forming transistor devices comprising a single semicondu...

Methods of forming an IC product comprising transistor devices with...

Active and dummy fin structures

Integrated circuit structure with niobium-based silicide layer and...

IC structure with single active region having different doping prof...

IC structure with short channel gate structure having shorter gate...

Single fin structures

FinFET device comprising a single diffusion break with an upper sur...

Patents Applicationslast 30 patents

INTEGRATED CIRCUIT WITH FINFET WITH SHORTER AND NARROWER FIN UNDER...

GATE-ALL-AROUND FIELD EFFECT TRANSISTORS

ISOLATION STRUCTURE HAVING DIFFERENT LINERS ON UPPER AND LOWER PORT...

FIN-TYPE FIELD EFFECT TRANSISTOR WITH INDEPENDENTLY BIASABLE SUPPLE...

SEMICONDUCTOR DEVICE INCLUDING DIFFUSION BREAK STRUCTURE AND METHOD...

WRAPAROUND GATE STRUCTURE

NANOSHEET STRUCTURES WITH TUNABLE CHANNELS AND INNER SIDEWALL SPACERS

MULTI-FIN FIN-TYPE FIELD EFFECT TRANSISTOR WITH FINE-TUNED EFFECTIV...

SEMICONDUCTOR DEVICE WITH DIFFERENT SIZED EPITAXIAL STRUCTURES

SEMICONDUCTOR STRUCTURE WITH ISOLATION REGION INCLUDING COMBINATION...

LATERAL BIPOLAR TRANSISTORS

STANDARD CELL AND IC STRUCTURE WITH TRENCH ISOLATION THROUGH ACTIVE...

LATERAL CAPACITORS OF SEMICONDUCTOR DEVICES

BIPOLAR JUNCTION TRANSISTOR ARRAYS

ARRAY ARRANGEMENTS OF VERTICAL BIPOLAR JUNCTION TRANSISTORS

ISOLATION STRUCTURES OF SEMICONDUCTOR DEVICES

SUBSTRATES OF SEMICONDUCTOR DEVICES HAVING VARYING THICKNESSES OF S...

SEMICONDUCTOR STRUCTURE INCLUDING FIELD EFFECT TRANSISTOR WITH SCAL...

MULTI-CHANNEL REPLACEMENT METAL GATE DEVICE

STRUCTURE HAVING DIFFERENT GATE DIELECTRIC WIDTHS IN DIFFERENT REGI...

CARBON IMPLANTATION FOR THICKER GATE SILICIDE

SINGLE FIN STRUCTURES

BIPOLAR TRANSISTOR WITH THERMAL CONDUCTOR

BIPOLAR TRANSISTOR WITH SELF-ALIGNED ASYMMETRIC SPACER

TRANSISTORS WITH MULTIPLE SILICIDE LAYERS

FIN ON SILICON ON INSULATOR AND INTEGRATION SCHEMES

BIPOLAR TRANSISTOR STRUCTURE WITH EMITTER/COLLECTOR CONTACT TO DOPE...

BIPOLAR TRANSISTOR STRUCTURE ON SEMICONDUCTOR FIN AND METHODS TO FO...

SILICON GERMANIUM FINS AND INTEGRATION METHODS

SEMICONDUCTOR-ON-INSULATOR FIELD EFFECT TRANSISTOR WITH PERFORMANCE...