Hongliang Shen

Person

Ballston Lake, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Fin-based anti-fuse device for integrated circuit (IC) products, me...
- Patent number 10,957,701
- Issue date Mar 23, 2021
- GLOBALFOUNDRIES U.S. INC.
- HongLiang Shen
- G11 - INFORMATION STORAGE
Information Patent Grant
STI structure with liner along lower portion of longitudinal sides...
- Patent number 10,910,276
- Issue date Feb 2, 2021
- GLOBALFOUNDRIES Inc.
- Yongjun Shi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device/health of line (HOL) aware eBeam based overlay (EBO OVL) str...
- Patent number 10,804,170
- Issue date Oct 13, 2020
- GLOBALFOUNDRIES Inc.
- Hongliang Shen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method to form high performance fin profile for 12LP and above
- Patent number 10,580,857
- Issue date Mar 3, 2020
- GLOBALFOUNDRIES, INC.
- Yanzhen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET cut isolation opening revision to compensate for overlay ina...
- Patent number 10,423,078
- Issue date Sep 24, 2019
- GLOBALFOUNDRIES Inc.
- Hongliang Shen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
FinFET cut isolation opening revision to compensate for overlay ina...
- Patent number 10,324,381
- Issue date Jun 18, 2019
- GLOBALFOUNDRIES Inc.
- Hongliang Shen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Methods of forming diffusion breaks on integrated circuit products...
- Patent number 9,653,583
- Issue date May 16, 2017
- GLOBALFOUNDRIES Inc.
- Wei Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of removing fins so as to form isolation structures on prod...
- Patent number 9,455,198
- Issue date Sep 27, 2016
- GLOBALFOUNDRIES Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming single diffusion breaks between finFET devices a...
- Patent number 9,406,676
- Issue date Aug 2, 2016
- GLOBALFOUNDRIES Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation integration methods and devices formed the...
- Patent number 9,385,192
- Issue date Jul 5, 2016
- GLOBALFOUNDRIES Inc.
- Hongliang Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
T-shaped fin isolation region and methods of fabrication
- Patent number 9,373,535
- Issue date Jun 21, 2016
- GLOBALFOUNDRIES Inc.
- Hongliang Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for uniform recess depth and fill in single diffusion break...
- Patent number 9,368,496
- Issue date Jun 14, 2016
- GLOBALFOUNDRIES Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Uniform exposed raised structures for non-planar semiconductor devices
- Patent number 9,362,176
- Issue date Jun 7, 2016
- GLOBALFOUNDRIES Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Product comprised of FinFET devices with single diffusion break iso...
- Patent number 9,263,516
- Issue date Feb 16, 2016
- GLOBALFOUNDRIES Inc.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Overlay performance for a fin field effect transistor device
- Patent number 9,219,002
- Issue date Dec 22, 2015
- GLOBALFOUNDRIES Inc.
- Zhenyu Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Product comprised of FinFET devices with single diffusion break iso...
- Patent number 9,171,752
- Issue date Oct 27, 2015
- GLOBALFOUNDRIES Inc.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming an e-fuse for an integrated circuit product and...
- Patent number 9,159,667
- Issue date Oct 13, 2015
- GLOBALFOUNDRIES Inc.
- Xiaoqiang Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation integration methods and devices formed the...
- Patent number 9,123,771
- Issue date Sep 1, 2015
- GLOBALFOUNDRIES Inc.
- Hongliang Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET fabrication method
- Patent number 9,123,772
- Issue date Sep 1, 2015
- GLOBALFOUNDRIES, INC.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
T-shaped single diffusion barrier with single mask approach process...
- Patent number 9,123,773
- Issue date Sep 1, 2015
- GLOBALFOUNDRIES Inc.
- HongLiang Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits including FINFET devices with shallow trench is...
- Patent number 9,087,870
- Issue date Jul 21, 2015
- GLOBALFOUNDRIES, INC.
- Wei Hua Tong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double patterning via triangular shaped sidewall spacers
- Patent number 8,969,205
- Issue date Mar 3, 2015
- HongLiang Shen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DEVICE/HEALTH OF LINE (HOL) AWARE EBEAM BASED OVERLAY (EBO OVL) STR...
- Publication number 20200294868
- Publication date Sep 17, 2020
- GLOBALFOUNDRIES INC.
- Hongliang SHEN
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NOVEL METHOD TO FORM HIGH PERFORMANCE FIN PROFILE FOR 12LP AND ABOVE
- Publication number 20190386100
- Publication date Dec 19, 2019
- GLOBALFOUNDRIES, Inc.
- Yanzhen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFERENT HEIGHT OF FINS IN SEMICONDUCTOR STRUCTURE
- Publication number 20160315084
- Publication date Oct 27, 2016
- GLOBALFOUNDRIES INC.
- Xusheng WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SINGLE DIFFUSION BREAKS BETWEEN FINFET DEVICES A...
- Publication number 20160190130
- Publication date Jun 30, 2016
- GLOBALFOUNDRIES INC.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
T-SHAPED FIN ISOLATION REGION AND METHODS OF FABRICATION
- Publication number 20160111320
- Publication date Apr 21, 2016
- GLOBALFOUNDRIES INC.
- Hongliang SHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRODUCT COMPRISED OF FINFET DEVICES WITH SINGLE DIFFUSION BREAK ISO...
- Publication number 20160049468
- Publication date Feb 18, 2016
- GLOBALFOUNDRIES INC.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIFORM EXPOSED RAISED STRUCTURES FOR NON-PLANAR SEMICONDUCTOR DEVICES
- Publication number 20150380316
- Publication date Dec 31, 2015
- GLOBALFOUNDRIES INC.
- Hong YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
E-FUSE STRUCTURE FOR AN INTEGRATED CIRCUIT PRODUCT
- Publication number 20150340319
- Publication date Nov 26, 2015
- GLOBALFOUNDRIES INC.
- Xiaoqiang Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHALLOW TRENCH ISOLATION INTEGRATION METHODS AND DEVICES FORMED THE...
- Publication number 20150333121
- Publication date Nov 19, 2015
- GLOBALFOUNDRIES INC.
- Hongliang Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET FABRICATION METHOD
- Publication number 20150333062
- Publication date Nov 19, 2015
- GLOBALFOUNDRIES INC.
- XUSHENG WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF SEMICONDUCTOR STRUCTURES USING OXIDIZED POLYCRYSTALL...
- Publication number 20150270159
- Publication date Sep 24, 2015
- GLOBALFOUNDRIES INC.
- Haigou HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NARROW DIFFUSION BREAK FOR A FIN FIELD EFFECT (FinFET) TRANSISTOR D...
- Publication number 20150123211
- Publication date May 7, 2015
- GLOBALFOUNDRIES INC.
- Qi Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE BY STOPPING PLANARI...
- Publication number 20150093877
- Publication date Apr 2, 2015
- Haigou HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET FABRICATION METHOD
- Publication number 20150093878
- Publication date Apr 2, 2015
- GLOBAL FOUNDRIES Inc.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OVERLAY PERFORMANCE FOR A FIN FIELD EFFECT TRANSISTOR DEVICE
- Publication number 20150076653
- Publication date Mar 19, 2015
- GLOBALFOUNDRIES INC.
- Zhenyu Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING AN E-FUSE FOR AN INTEGRATED CIRCUIT PRODUCT AND...
- Publication number 20150028447
- Publication date Jan 29, 2015
- GLOBAL FOUNDRIES Inc.
- Xiaoqiang Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS INCLUDING FINFET DEVICES WITH SHALLOW TRENCH IS...
- Publication number 20140353795
- Publication date Dec 4, 2014
- Wei Hua Tong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE PATTERNING VIA TRIANGULAR SHAPED SIDEWALL SPACERS
- Publication number 20140291735
- Publication date Oct 2, 2014
- GLOBAL FOUNDRIES, INC.
- HongLiang Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHALLOW TRENCH ISOLATION INTEGRATION METHODS AND DEVICES FORMED THE...
- Publication number 20140227858
- Publication date Aug 14, 2014
- GLOBALFOUNDRIES INC.
- Hongliang Shen
- H01 - BASIC ELECTRIC ELEMENTS

Hongliang Shen

Person

Patents Grantslast 30 patents

Fin-based anti-fuse device for integrated circuit (IC) products, me...

STI structure with liner along lower portion of longitudinal sides...

Device/health of line (HOL) aware eBeam based overlay (EBO OVL) str...

Method to form high performance fin profile for 12LP and above

FinFET cut isolation opening revision to compensate for overlay ina...

FinFET cut isolation opening revision to compensate for overlay ina...

Methods of forming diffusion breaks on integrated circuit products...

Methods of removing fins so as to form isolation structures on prod...

Method for forming single diffusion breaks between finFET devices a...

Shallow trench isolation integration methods and devices formed the...

T-shaped fin isolation region and methods of fabrication

Method for uniform recess depth and fill in single diffusion break...

Uniform exposed raised structures for non-planar semiconductor devices

Product comprised of FinFET devices with single diffusion break iso...

Overlay performance for a fin field effect transistor device

Product comprised of FinFET devices with single diffusion break iso...

Methods of forming an e-fuse for an integrated circuit product and...

Shallow trench isolation integration methods and devices formed the...

FinFET fabrication method

T-shaped single diffusion barrier with single mask approach process...

Integrated circuits including FINFET devices with shallow trench is...

Double patterning via triangular shaped sidewall spacers

Patents Applicationslast 30 patents

DEVICE/HEALTH OF LINE (HOL) AWARE EBEAM BASED OVERLAY (EBO OVL) STR...

NOVEL METHOD TO FORM HIGH PERFORMANCE FIN PROFILE FOR 12LP AND ABOVE

DIFFERENT HEIGHT OF FINS IN SEMICONDUCTOR STRUCTURE

METHOD FOR FORMING SINGLE DIFFUSION BREAKS BETWEEN FINFET DEVICES A...

T-SHAPED FIN ISOLATION REGION AND METHODS OF FABRICATION

PRODUCT COMPRISED OF FINFET DEVICES WITH SINGLE DIFFUSION BREAK ISO...

UNIFORM EXPOSED RAISED STRUCTURES FOR NON-PLANAR SEMICONDUCTOR DEVICES

E-FUSE STRUCTURE FOR AN INTEGRATED CIRCUIT PRODUCT

SHALLOW TRENCH ISOLATION INTEGRATION METHODS AND DEVICES FORMED THE...

FINFET FABRICATION METHOD

FABRICATION OF SEMICONDUCTOR STRUCTURES USING OXIDIZED POLYCRYSTALL...

NARROW DIFFUSION BREAK FOR A FIN FIELD EFFECT (FinFET) TRANSISTOR D...

METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE BY STOPPING PLANARI...

FINFET FABRICATION METHOD

OVERLAY PERFORMANCE FOR A FIN FIELD EFFECT TRANSISTOR DEVICE

METHODS OF FORMING AN E-FUSE FOR AN INTEGRATED CIRCUIT PRODUCT AND...

INTEGRATED CIRCUITS INCLUDING FINFET DEVICES WITH SHALLOW TRENCH IS...

DOUBLE PATTERNING VIA TRIANGULAR SHAPED SIDEWALL SPACERS

SHALLOW TRENCH ISOLATION INTEGRATION METHODS AND DEVICES FORMED THE...