Hsien-Ping Feng

Person

Taipei, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Apparatus and method for preventing copper peeling in ECP
- Patent number 7,667,835
- Issue date Feb 23, 2010
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsi-Kuei Cheng
- G01 - MEASURING TESTING
Information Patent Grant
Semiconductor devices having post passivation interconnections and...
- Patent number 7,528,478
- Issue date May 5, 2009
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsi-Kuei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for stabilizing plating film impurities
- Patent number 7,481,910
- Issue date Jan 27, 2009
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsien-Ping Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Post ECP multi-step anneal/H2 treatment to reduce film impurity
- Patent number 7,432,192
- Issue date Oct 7, 2008
- Taiwan Semiconductor Manufacturing Company
- Hsien-Ping Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for conductive film quality evaluation
- Patent number 7,262,067
- Issue date Aug 28, 2007
- Taiwan Semiconductor Manufacturing Company
- Hsien-Ping Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to eliminate plating copper defect
- Patent number 7,256,120
- Issue date Aug 14, 2007
- Taiwan Semiconductor Manufacturing Co.
- Jung-Chin Tsao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for copper film quality enhancement with two-s...
- Patent number 7,189,650
- Issue date Mar 13, 2007
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chi-Wen Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for preventing voids in metal interconnects
- Patent number 7,122,471
- Issue date Oct 17, 2006
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jung-Chih Tsao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Post ECP multi-step anneal/H2 treatment to reduce film impurity
- Patent number 7,030,016
- Issue date Apr 18, 2006
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsien-Ping Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reducing defects in post passivation interconnect process
- Patent number 7,026,233
- Issue date Apr 11, 2006
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsi-Kuei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chamber leakage detection by measurement of reflectivity of oxidize...
- Patent number 6,985,222
- Issue date Jan 10, 2006
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsi-Kuei Cheng
- G01 - MEASURING TESTING

Patents Applicationslast 30 patents

Information Patent Application
Method of reducing oxygen content in ECP solution
- Publication number 20080067076
- Publication date Mar 20, 2008
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ming-Yuan Cheng
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
Apparatus and method for preventing copper peeling in ECP
- Publication number 20080047827
- Publication date Feb 28, 2008
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsi-Kuei Cheng
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
Systems and methods for wafer cleaning
- Publication number 20070006405
- Publication date Jan 11, 2007
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsien-Ping Feng
- B08 - CLEANING
Information Patent Application
Method for fabricating metal layer
- Publication number 20060219566
- Publication date Oct 5, 2006
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsi-Kuei Cheng
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
Post ECP multi-step anneal/H2 treatment to reduce film impurity
- Publication number 20060216930
- Publication date Sep 28, 2006
- Hsien-Ping Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metallization target optimization method providing enhanced metalli...
- Publication number 20060196765
- Publication date Sep 7, 2006
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsi-Kuei Cheng
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Semiconductor devices having post passivation interconnections with...
- Publication number 20060145332
- Publication date Jul 6, 2006
- Hsi-Kuei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to eliminate plating copper defect
- Publication number 20060141768
- Publication date Jun 29, 2006
- Jung-Chin Tsao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and apparatus for copper film quality enhancement with two-s...
- Publication number 20060105565
- Publication date May 18, 2006
- Chi-Wen Liu
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
Method and apparatus for stabilizing plating film impurities
- Publication number 20060000717
- Publication date Jan 5, 2006
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsien-Ping Feng
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
Method for preventing voids in metal interconnects
- Publication number 20050245064
- Publication date Nov 3, 2005
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jung-Chih Tsao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for conductive film quality evaluation
- Publication number 20050239221
- Publication date Oct 27, 2005
- Hsien-Ping Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Post ECP multi-step anneal/H2 treatment to reduce film impurity
- Publication number 20050227479
- Publication date Oct 13, 2005
- Taiwan Semiconductor Manufacturing Co.
- Hsien-Ping Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for reducing defects in post passivation interconnect process
- Publication number 20050032353
- Publication date Feb 10, 2005
- Hsi-Kuei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Chamber leakage detection by measurement of reflectivity of oxidize...
- Publication number 20040212798
- Publication date Oct 28, 2004
- Hsi-Kuei Cheng
- G01 - MEASURING TESTING

Hsien-Ping Feng

Person

Patents Grantslast 30 patents

Apparatus and method for preventing copper peeling in ECP

Semiconductor devices having post passivation interconnections and...

Method and apparatus for stabilizing plating film impurities

Post ECP multi-step anneal/H2 treatment to reduce film impurity

Method for conductive film quality evaluation

Method to eliminate plating copper defect

Method and apparatus for copper film quality enhancement with two-s...

Method for preventing voids in metal interconnects

Post ECP multi-step anneal/H2 treatment to reduce film impurity

Method for reducing defects in post passivation interconnect process

Chamber leakage detection by measurement of reflectivity of oxidize...

Patents Applicationslast 30 patents

Method of reducing oxygen content in ECP solution

Apparatus and method for preventing copper peeling in ECP

Systems and methods for wafer cleaning

Method for fabricating metal layer

Post ECP multi-step anneal/H2 treatment to reduce film impurity

Metallization target optimization method providing enhanced metalli...

Semiconductor devices having post passivation interconnections with...

Method to eliminate plating copper defect

Method and apparatus for copper film quality enhancement with two-s...

Method and apparatus for stabilizing plating film impurities

Method for preventing voids in metal interconnects

Method for conductive film quality evaluation

Post ECP multi-step anneal/H2 treatment to reduce film impurity

Method for reducing defects in post passivation interconnect process

Chamber leakage detection by measurement of reflectivity of oxidize...