Huajie Chen

Person

Wappingers Falls, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
High performance stress-enhanced MOSFETs using Si:C and SiGe epitax...
- Patent number 9,401,424
- Issue date Jul 26, 2016
- Samsung Electronics Co., Ltd.
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance stress-enhanced MOSFETs using Si:C and SiGe epitax...
- Patent number 9,023,698
- Issue date May 5, 2015
- Samsung Electronics Co., Ltd.
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance stress-enhanced MOSFETs using Si:C and SiGe epitax...
- Patent number 8,901,566
- Issue date Dec 2, 2014
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance stress-enhanced MOSFETS using Si:C and SiGe epitax...
- Patent number 8,168,489
- Issue date May 1, 2012
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra shallow junction formation by epitaxial interface limited dif...
- Patent number 8,067,805
- Issue date Nov 29, 2011
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implantation for suppression of defects in annealed SiGe layers
- Patent number 8,053,759
- Issue date Nov 8, 2011
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid SOI/bulk semiconductor transistors
- Patent number 7,923,782
- Issue date Apr 12, 2011
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a cross-section hourglass shaped channel region f...
- Patent number 7,863,197
- Issue date Jan 4, 2011
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxide field effect transistor with a sharp halo
- Patent number 7,859,013
- Issue date Dec 28, 2010
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra shallow junction formation by epitaxial interface limited dif...
- Patent number 7,816,237
- Issue date Oct 19, 2010
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Defect reduction by oxidation of silicon
- Patent number 7,816,664
- Issue date Oct 19, 2010
- International Business Machines Corporation
- Stephen W. Bedell
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Embedded silicon germanium using a double buried oxide silicon-on-i...
- Patent number 7,781,800
- Issue date Aug 24, 2010
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid SOI/bulk semiconductor transistors
- Patent number 7,767,503
- Issue date Aug 3, 2010
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for reducing threshold voltage variation
- Patent number 7,750,414
- Issue date Jul 6, 2010
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained silicon directly-on-insulator substrate with hybrid crysta...
- Patent number 7,723,791
- Issue date May 25, 2010
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures and methods for manufacturing of dislocation free stress...
- Patent number 7,713,806
- Issue date May 11, 2010
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pre-epitaxial disposable spacer integration scheme with very low te...
- Patent number 7,682,915
- Issue date Mar 23, 2010
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-quality SGOI by annealing near the alloy melting point
- Patent number 7,679,141
- Issue date Mar 16, 2010
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for making strained channel field effect trans...
- Patent number 7,645,656
- Issue date Jan 12, 2010
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming thin SGOI wafers with high relaxation and low sta...
- Patent number 7,550,370
- Issue date Jun 23, 2009
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor heterostructure including a substantially relaxed, lo...
- Patent number 7,507,988
- Issue date Mar 24, 2009
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dislocation free stressed channels in bulk silicon and SOI CMOS dev...
- Patent number 7,504,693
- Issue date Mar 17, 2009
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures and methods for manufacturing of dislocation free stress...
- Patent number 7,476,580
- Issue date Jan 13, 2009
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid SOI-bulk semiconductor transistors
- Patent number 7,452,761
- Issue date Nov 18, 2008
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded silicon germanium using a double buried oxide silicon-on-i...
- Patent number 7,446,350
- Issue date Nov 4, 2008
- International Business Machine Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained silicon directly-on-insulator substrate with hybrid crysta...
- Patent number 7,423,303
- Issue date Sep 9, 2008
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra shallow junction formation by epitaxial interface limited dif...
- Patent number 7,402,870
- Issue date Jul 22, 2008
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making strained semiconductor transistors having lattice-...
- Patent number 7,396,714
- Issue date Jul 8, 2008
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxide field effect transistor with a sharp halo and a method...
- Patent number 7,384,835
- Issue date Jun 10, 2008
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pre-epitaxial disposable spacer integration scheme with very low te...
- Patent number 7,381,623
- Issue date Jun 3, 2008
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH PERFORMANCE STRESS-ENHANCED MOSFETS USING SI:C AND SIGE EPITAX...
- Publication number 20140322873
- Publication date Oct 30, 2014
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH PERFORMANCE STRESS-ENHANCED MOSFETS USING SI:C AND SIGE EPITAX...
- Publication number 20120196412
- Publication date Aug 2, 2012
- International Business Machines Corporation
- Huajie CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION IMPLANTATION FOR SUPPRESSION OF DEFECTS IN ANNEALED SiGe LAYERS
- Publication number 20100032684
- Publication date Feb 11, 2010
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR SEMICONDUCTOR DEVICES WITH SILICON-GERMANI...
- Publication number 20090152590
- Publication date Jun 18, 2009
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES AND METHODS FOR MANUFACTURING OF DISLOCATION FREE STRESS...
- Publication number 20090149010
- Publication date Jun 11, 2009
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR MANUFACTURING STRAINED SILICON DIRECTLY-ON...
- Publication number 20080296634
- Publication date Dec 4, 2008
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED SILICON GERMANIUM USING A DOUBLE BURIED OXIDE SILICON-ON-I...
- Publication number 20080265281
- Publication date Oct 30, 2008
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSS-SECTION HOURGLASS SHAPED CHANNEL REGION FOR CHARGE CARRIER MO...
- Publication number 20080258180
- Publication date Oct 23, 2008
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEFECT REDUCTION BY OXIDATION OF SILICON
- Publication number 20080246019
- Publication date Oct 9, 2008
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID SOI/BULK SEMICONDUCTOR TRANSISTORS
- Publication number 20080242069
- Publication date Oct 2, 2008
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRA SHALLOW JUNCTION FORMATION BY EPITAXIAL INTERFACE LIMITED DIF...
- Publication number 20080233687
- Publication date Sep 25, 2008
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRA SHALLOW JUNCTION FORMATION BY EPITAXIAL INTERFACE LIMITED DIF...
- Publication number 20080230840
- Publication date Sep 25, 2008
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRE-EPITAXIAL DISPOSABLE SPACER INTEGRATION SCHEME WITH VERY LOW TE...
- Publication number 20080199998
- Publication date Aug 21, 2008
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-QUALITY SGOI BY ANNEALING NEAR THE ALLOY MELTING POINT
- Publication number 20080116483
- Publication date May 22, 2008
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE FIELD EFFECT TRANSISTOR WITH A SHARP HALO
- Publication number 20080093629
- Publication date Apr 24, 2008
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hybrid SOI-Bulk Semiconductor Transistors
- Publication number 20080090366
- Publication date Apr 17, 2008
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES AND METHODS FOR MANUFACTURING OF DISLOCATION FREE STRESS...
- Publication number 20080064197
- Publication date Mar 13, 2008
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH PERFORMANCE STRESS-ENHANCED MOSFETS USING SI:C AND SIGE EPITAX...
- Publication number 20070296038
- Publication date Dec 27, 2007
- International Business Machines Corporation
- Huajie CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE FIELD EFFECT TRANSISTOR WITH A SHARP HALO AND A METHOD...
- Publication number 20070275510
- Publication date Nov 29, 2007
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH PERFORMANCE STRESS-ENHANCED MOSFETS USING SI:C AND SIGE EPITAX...
- Publication number 20070264783
- Publication date Nov 15, 2007
- International Business Machines Corporation
- Huajie CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR MANUFACTURING STRAINED SILICON DIRECTLY-ON...
- Publication number 20070262361
- Publication date Nov 15, 2007
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of making strained semiconductor transistors having lattice-...
- Publication number 20070249114
- Publication date Oct 25, 2007
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR MANUFACTURING PLANAR STRAINED Si/SiGe SUBS...
- Publication number 20070170507
- Publication date Jul 26, 2007
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming thin sgoi wafers with high relaxation and low sta...
- Publication number 20070128840
- Publication date Jun 7, 2007
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEFECT REDUCTION BY OXIDATION OF SILICON
- Publication number 20070105350
- Publication date May 10, 2007
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR MAKING STRAINED CHANNEL FIELD EFFECT TRANS...
- Publication number 20060292779
- Publication date Dec 28, 2006
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED SILICON GERMANIUM USING A DOUBLE BURIED OXIDE SILICON-ON-I...
- Publication number 20060255330
- Publication date Nov 16, 2006
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR MANUFACTURING PLANAR STRAINED Si/SiGe SUBS...
- Publication number 20060172495
- Publication date Aug 3, 2006
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and method for manufacturing strained silicon directly-on...
- Publication number 20060157706
- Publication date Jul 20, 2006
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW CONCENTRATION SiGe BUFFER DURING STRAINED Si GROWTH OF SSGOI MA...
- Publication number 20060151787
- Publication date Jul 13, 2006
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS

Huajie Chen

Person

Patents Grantslast 30 patents

High performance stress-enhanced MOSFETs using Si:C and SiGe epitax...

High performance stress-enhanced MOSFETs using Si:C and SiGe epitax...

High performance stress-enhanced MOSFETs using Si:C and SiGe epitax...

High performance stress-enhanced MOSFETS using Si:C and SiGe epitax...

Ultra shallow junction formation by epitaxial interface limited dif...

Ion implantation for suppression of defects in annealed SiGe layers

Hybrid SOI/bulk semiconductor transistors

Method of forming a cross-section hourglass shaped channel region f...

Metal oxide field effect transistor with a sharp halo

Ultra shallow junction formation by epitaxial interface limited dif...

Defect reduction by oxidation of silicon

Embedded silicon germanium using a double buried oxide silicon-on-i...

Hybrid SOI/bulk semiconductor transistors

Structure and method for reducing threshold voltage variation

Strained silicon directly-on-insulator substrate with hybrid crysta...

Structures and methods for manufacturing of dislocation free stress...

Pre-epitaxial disposable spacer integration scheme with very low te...

High-quality SGOI by annealing near the alloy melting point

Structure and method for making strained channel field effect trans...

Method of forming thin SGOI wafers with high relaxation and low sta...

Semiconductor heterostructure including a substantially relaxed, lo...

Dislocation free stressed channels in bulk silicon and SOI CMOS dev...

Structures and methods for manufacturing of dislocation free stress...

Hybrid SOI-bulk semiconductor transistors

Embedded silicon germanium using a double buried oxide silicon-on-i...

Strained silicon directly-on-insulator substrate with hybrid crysta...

Ultra shallow junction formation by epitaxial interface limited dif...

Method of making strained semiconductor transistors having lattice-...

Metal oxide field effect transistor with a sharp halo and a method...

Pre-epitaxial disposable spacer integration scheme with very low te...

Patents Applicationslast 30 patents

HIGH PERFORMANCE STRESS-ENHANCED MOSFETS USING SI:C AND SIGE EPITAX...

HIGH PERFORMANCE STRESS-ENHANCED MOSFETS USING SI:C AND SIGE EPITAX...

ION IMPLANTATION FOR SUPPRESSION OF DEFECTS IN ANNEALED SiGe LAYERS

METHOD AND STRUCTURE FOR SEMICONDUCTOR DEVICES WITH SILICON-GERMANI...

STRUCTURES AND METHODS FOR MANUFACTURING OF DISLOCATION FREE STRESS...

STRUCTURE AND METHOD FOR MANUFACTURING STRAINED SILICON DIRECTLY-ON...

EMBEDDED SILICON GERMANIUM USING A DOUBLE BURIED OXIDE SILICON-ON-I...

CROSS-SECTION HOURGLASS SHAPED CHANNEL REGION FOR CHARGE CARRIER MO...

DEFECT REDUCTION BY OXIDATION OF SILICON

HYBRID SOI/BULK SEMICONDUCTOR TRANSISTORS

ULTRA SHALLOW JUNCTION FORMATION BY EPITAXIAL INTERFACE LIMITED DIF...

ULTRA SHALLOW JUNCTION FORMATION BY EPITAXIAL INTERFACE LIMITED DIF...

PRE-EPITAXIAL DISPOSABLE SPACER INTEGRATION SCHEME WITH VERY LOW TE...

HIGH-QUALITY SGOI BY ANNEALING NEAR THE ALLOY MELTING POINT

METAL OXIDE FIELD EFFECT TRANSISTOR WITH A SHARP HALO

Hybrid SOI-Bulk Semiconductor Transistors

STRUCTURES AND METHODS FOR MANUFACTURING OF DISLOCATION FREE STRESS...

HIGH PERFORMANCE STRESS-ENHANCED MOSFETS USING SI:C AND SIGE EPITAX...

METAL OXIDE FIELD EFFECT TRANSISTOR WITH A SHARP HALO AND A METHOD...

HIGH PERFORMANCE STRESS-ENHANCED MOSFETS USING SI:C AND SIGE EPITAX...

STRUCTURE AND METHOD FOR MANUFACTURING STRAINED SILICON DIRECTLY-ON...

Method of making strained semiconductor transistors having lattice-...

STRUCTURE AND METHOD FOR MANUFACTURING PLANAR STRAINED Si/SiGe SUBS...

Method of forming thin sgoi wafers with high relaxation and low sta...

DEFECT REDUCTION BY OXIDATION OF SILICON

STRUCTURE AND METHOD FOR MAKING STRAINED CHANNEL FIELD EFFECT TRANS...

EMBEDDED SILICON GERMANIUM USING A DOUBLE BURIED OXIDE SILICON-ON-I...

STRUCTURE AND METHOD FOR MANUFACTURING PLANAR STRAINED Si/SiGe SUBS...

Structure and method for manufacturing strained silicon directly-on...

LOW CONCENTRATION SiGe BUFFER DURING STRAINED Si GROWTH OF SSGOI MA...