Hugo Burke

Person

Llantrisant, GB

People

Patents Grantslast 30 patents

Information Patent Grant
Controlled resistance integrated snubber for power switching device
- Patent number 11,217,577
- Issue date Jan 4, 2022
- Infineon Technologies Americas Corp.
- Hugo Burke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlled resistance integrated snubber for power switching device
- Patent number 10,593,664
- Issue date Mar 17, 2020
- Infineon Technologies Americas Corp.
- Hugo Burke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a reliable and robust electrical contact
- Patent number 10,388,591
- Issue date Aug 20, 2019
- Infineon Technologies Americas Corp.
- Hugo Burke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods for forming a semiconductor device
- Patent number 10,236,246
- Issue date Mar 19, 2019
- Infineon Technologies Americas Corp.
- Hugo Burke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor structure having integrated snubb...
- Patent number 9,966,464
- Issue date May 8, 2018
- Infineon Technologies Americas Corp.
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with contiguous gate trenches and offset...
- Patent number 9,818,743
- Issue date Nov 14, 2017
- Infineon Technologies Americas Corp.
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried bus and related method
- Patent number 9,812,538
- Issue date Nov 7, 2017
- Infineon Technologies Americas Corp.
- Hugo Burke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with a double metal contact and related...
- Patent number 9,761,550
- Issue date Sep 12, 2017
- Infineon Technologies Americas Corp.
- Robert Montgomery
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reliable and robust electrical contact
- Patent number 9,673,287
- Issue date Jun 6, 2017
- Infineon Technologies Americas Corp.
- Hugo Burke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a shallow and narrow trench FET and related...
- Patent number 9,653,597
- Issue date May 16, 2017
- Infineon Technologies Americas Corp.
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having integrated snubber resistance
- Patent number 9,627,328
- Issue date Apr 18, 2017
- Infineon Technologies Americas Corp.
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with source trench and termination trenc...
- Patent number 9,620,583
- Issue date Apr 11, 2017
- Infineon Technologies Americas Corp.
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with a double metal contact
- Patent number 9,318,355
- Issue date Apr 19, 2016
- Infineon Technologies Americas Corp.
- Robert Montgomery
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device including a double metal contact
- Patent number 8,791,525
- Issue date Jul 29, 2014
- International Rectifier Corporation
- Robert Montgomery
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET and method for fabricating same
- Patent number 8,536,645
- Issue date Sep 17, 2013
- International Rectifier Corporation
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a gate contact on one surface electrica...
- Patent number 8,294,208
- Issue date Oct 23, 2012
- International Rectifier Corporation
- Hugo R. G. Burke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laser ablation to selectively thin wafers/die to lower device RDSON
- Patent number 7,851,361
- Issue date Dec 14, 2010
- International Rectifier Corporation
- Hugo R. G. Burke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of manufacture of ultra thin semiconductor wafers with bond...
- Patent number 7,682,935
- Issue date Mar 23, 2010
- International Rectifier Corporation
- Hugo R. G. Burke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced metal design rules for power devices
- Patent number 7,517,810
- Issue date Apr 14, 2009
- International Rectifier Corporation
- David Paul Jones
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crack protection for silicon die
- Patent number 7,508,052
- Issue date Mar 24, 2009
- International Rectifier Corporation
- Hugo R. G. Burke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split electrode gate trench power device
- Patent number 7,423,317
- Issue date Sep 9, 2008
- International Rectifier Corporation
- Hugo R. G. Burke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 7,385,273
- Issue date Jun 10, 2008
- International Rectifier Corporation
- Hugo R Burke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench power MOSFET with reduced gate resistance
- Patent number 7,368,353
- Issue date May 6, 2008
- International Rectifier Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Controlled Resistance Integrated Snubber for Power Switching Device
- Publication number 20200185377
- Publication date Jun 11, 2020
- Infineon Technologies Americas Corp.
- Hugo Burke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Controlled Resistance Integrated Snubber for Power Switching Device
- Publication number 20180182750
- Publication date Jun 28, 2018
- Infineon Technologies Americas Corp.
- Hugo Burke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices and Methods for Forming a Semiconductor Device
- Publication number 20180019204
- Publication date Jan 18, 2018
- Infineon Technologies Americas Corp.
- Hugo BURKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming a Reliable and Robust Electrical Contact
- Publication number 20170236771
- Publication date Aug 17, 2017
- Infineon Technologies Americas Corp.
- Hugo Burke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Fabricating a Shallow and Narrow Trench FET
- Publication number 20170213909
- Publication date Jul 27, 2017
- Infineon Technologies Americas Corp.
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming a Semiconductor Structure Having Integrated Snubb...
- Publication number 20170186861
- Publication date Jun 29, 2017
- Infineon Technologies Americas Corp.
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Buried Bus and Related Method
- Publication number 20170154970
- Publication date Jun 1, 2017
- Infineon Technologies Americas Corp.
- Hugo Burke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device with a Double Metal Contact and Related...
- Publication number 20160233185
- Publication date Aug 11, 2016
- Infineon Technologies Americas Corp.
- Robert Montgomery
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reliable and Robust Electrical Contact
- Publication number 20160172454
- Publication date Jun 16, 2016
- Infineon Technologies Americas Corp.
- Hugo Burke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure Having Integrated Snubber Resistance and Re...
- Publication number 20160104773
- Publication date Apr 14, 2016
- INTERNATIONAL RECTIFIER CORPORATION
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device with Source Trench and Termination Trenc...
- Publication number 20160104766
- Publication date Apr 14, 2016
- INTERNATIONAL RECTIFIER CORPORATION
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device with Low RDSON and High Breakdown Voltage
- Publication number 20150325685
- Publication date Nov 12, 2015
- International Rectifier Corporation
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device with Contiguous Gate Trenches and Offset...
- Publication number 20140374825
- Publication date Dec 25, 2014
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device with a Double Metal Contact
- Publication number 20140327057
- Publication date Nov 6, 2014
- Robert Montgomery
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench MOSFET and Method for Fabricating Same
- Publication number 20120211825
- Publication date Aug 23, 2012
- INTERNATIONAL RECTIFIER CORPORATION
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating a shallow and narrow trench FETand related s...
- Publication number 20110284950
- Publication date Nov 24, 2011
- INTERNATIONAL RECTIFIER CORPORATION
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A GATE CONTACT ON ONE SURFACE ELECTRICA...
- Publication number 20090224313
- Publication date Sep 10, 2009
- Hugo R.G. Burke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE INCLUDING A DOUBLE METAL CONTACT
- Publication number 20090212435
- Publication date Aug 27, 2009
- Robert Montgomery
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Laser ablation to selectively thin wafers/die to lower device RDSON
- Publication number 20070210407
- Publication date Sep 13, 2007
- Hugo R.G. Burke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Split electrode gate trench power device
- Publication number 20070023829
- Publication date Feb 1, 2007
- Hugo R.G. Burke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power semiconductor device
- Publication number 20060286732
- Publication date Dec 21, 2006
- International Rectifier Corporation
- Hugo R.G. Burke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process of manufacture of ultra thin semiconductor wafers with bond...
- Publication number 20060281315
- Publication date Dec 14, 2006
- International Rectifier Corporation
- Hugo R.G. Burke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduced metal design rules for power devices
- Publication number 20060270207
- Publication date Nov 30, 2006
- International Rectifier Corporation
- David Paul Jones
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Crack protection for silicon die
- Publication number 20050269720
- Publication date Dec 8, 2005
- International Rectifier Corp.
- Hugo R.G. Burke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench power MOSFET with reduced gate resistance
- Publication number 20050112823
- Publication date May 26, 2005
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Controlled resistance integrated snubber for power switching device

Controlled resistance integrated snubber for power switching device

Method of forming a reliable and robust electrical contact

Semiconductor devices and methods for forming a semiconductor device

Method of forming a semiconductor structure having integrated snubb...

Power semiconductor device with contiguous gate trenches and offset...

Buried bus and related method

Power semiconductor device with a double metal contact and related...

Reliable and robust electrical contact

Method for fabricating a shallow and narrow trench FET and related...

Semiconductor structure having integrated snubber resistance

Power semiconductor device with source trench and termination trenc...

Power semiconductor device with a double metal contact

Power semiconductor device including a double metal contact

Trench MOSFET and method for fabricating same

Semiconductor device having a gate contact on one surface electrica...

Laser ablation to selectively thin wafers/die to lower device RDSON

Process of manufacture of ultra thin semiconductor wafers with bond...

Reduced metal design rules for power devices

Crack protection for silicon die

Split electrode gate trench power device

Power semiconductor device

Trench power MOSFET with reduced gate resistance

Patents Applicationslast 30 patents

Controlled Resistance Integrated Snubber for Power Switching Device

Controlled Resistance Integrated Snubber for Power Switching Device

Semiconductor Devices and Methods for Forming a Semiconductor Device

Method of Forming a Reliable and Robust Electrical Contact

Method for Fabricating a Shallow and Narrow Trench FET

Method of Forming a Semiconductor Structure Having Integrated Snubb...

Buried Bus and Related Method

Power Semiconductor Device with a Double Metal Contact and Related...

Reliable and Robust Electrical Contact

Semiconductor Structure Having Integrated Snubber Resistance and Re...

Power Semiconductor Device with Source Trench and Termination Trenc...

Power Semiconductor Device with Low RDSON and High Breakdown Voltage

Power Semiconductor Device with Contiguous Gate Trenches and Offset...

Power Semiconductor Device with a Double Metal Contact

Trench MOSFET and Method for Fabricating Same

Method for fabricating a shallow and narrow trench FETand related s...

SEMICONDUCTOR DEVICE HAVING A GATE CONTACT ON ONE SURFACE ELECTRICA...

POWER SEMICONDUCTOR DEVICE INCLUDING A DOUBLE METAL CONTACT

Laser ablation to selectively thin wafers/die to lower device RDSON

Split electrode gate trench power device

Power semiconductor device

Process of manufacture of ultra thin semiconductor wafers with bond...

Reduced metal design rules for power devices

Crack protection for silicon die

Trench power MOSFET with reduced gate resistance