Hun-Jan Tao

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Sidewall free CESL for enlarging ILD gap-fill window
- Patent number 9,218,974
- Issue date Dec 22, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Han-Pin Chung
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Sidewall-free CESL for enlarging ILD gap-fill window
- Patent number 8,999,834
- Issue date Apr 7, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Han-Pin Chung
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for protecting a gate structure during contact formation
- Patent number 8,970,015
- Issue date Mar 3, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hong-Dyi Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for a gate replacement process
- Patent number 8,658,525
- Issue date Feb 25, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for protecting a gate structure during contact formation
- Patent number 8,648,446
- Issue date Feb 11, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hong-Dyi Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for backside polymer reduction in dry-etch process
- Patent number 8,529,783
- Issue date Sep 10, 2013
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Huang-Ming Chen
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for protecting a gate structure during contact formation
- Patent number 8,497,169
- Issue date Jul 30, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hong-Dyi Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual damascene interconnect in hybrid dielectric
- Patent number 8,415,799
- Issue date Apr 9, 2013
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Nien Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods with bilayer dielectrics
- Patent number 8,384,159
- Issue date Feb 26, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fong-Yu Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer hard mask
- Patent number 8,372,755
- Issue date Feb 12, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shiang-Bau Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for a gate replacement process
- Patent number 8,367,563
- Issue date Feb 5, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS structure with multiple spacers
- Patent number 8,299,508
- Issue date Oct 30, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bor Chiuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form a semiconductor device having gate dielectric layers...
- Patent number 8,283,222
- Issue date Oct 9, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuang-Yuan Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for protecting a gate structure during contact formation
- Patent number 8,202,776
- Issue date Jun 19, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hong-Dyi Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low K dielectric surface damage control
- Patent number 8,148,270
- Issue date Apr 3, 2012
- Taiwan Semiconductor Manufactuiring Co., Ltd.
- Hun-Jan Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate oxide leakage reduction
- Patent number 8,110,490
- Issue date Feb 7, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form a semiconductor device having gate dielectric layers...
- Patent number 8,008,143
- Issue date Aug 30, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuang-Yuan Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with dual-metal gate structures and fabricati...
- Patent number 7,947,591
- Issue date May 24, 2011
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Peng-Fu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Base oxide engineering for high-K gate stacks
- Patent number 7,939,396
- Issue date May 10, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Peng-Fu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact hole structures and contact structures and fabrication meth...
- Patent number 7,875,547
- Issue date Jan 25, 2011
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ju-Wang Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Triangular space element for semiconductor device
- Patent number 7,834,389
- Issue date Nov 16, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-metal-oxide high-K gate dielectrics
- Patent number 7,824,990
- Issue date Nov 2, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Vincent S. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS devices with continuous contact etch stop layer
- Patent number 7,732,878
- Issue date Jun 8, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Liang-Gi Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for backside polymer reduction in dry-etch pro...
- Patent number 7,713,380
- Issue date May 11, 2010
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Huang-Ming Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low K dielectric surface damage control
- Patent number 7,709,392
- Issue date May 4, 2010
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hun-Jan Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple-time flash anneal process
- Patent number 7,629,275
- Issue date Dec 8, 2009
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jennifer Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for photoresist stripping and treatment of low-k dielectric...
- Patent number 7,598,176
- Issue date Oct 6, 2009
- Taiwan Semiconductor Manufacturing Co. Ltd.
- Jang-Shiang Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resolving pattern-loading issues of SiGe stressor
- Patent number 7,579,248
- Issue date Aug 25, 2009
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods with bilayer dielectrics
- Patent number 7,531,399
- Issue date May 12, 2009
- Taiwan Semiconductor Manufacturing Company
- Fong-Yu Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming integrated circuit devices having n-MOSFET and p-...
- Patent number 7,465,634
- Issue date Dec 16, 2008
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Peng-Soon Lim
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SIDEWALL-FREE CESL FOR ENLARGING ILD GAP-FILL WINDOW
- Publication number 20140170846
- Publication date Jun 19, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Han-Pin Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method For Protecting a Gate Structure During Contact Formation
- Publication number 20140103407
- Publication date Apr 17, 2014
- Hong-Dyi CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Protecting a Gate Structure During Contact Formation
- Publication number 20130299921
- Publication date Nov 14, 2013
- Hong-Dyi Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Sidewall-Free CESL for Enlarging ILD Gap-Fill Window
- Publication number 20130270651
- Publication date Oct 17, 2013
- Han-Pin Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for a Gate Replacement Process
- Publication number 20130149821
- Publication date Jun 13, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PROTECTING A GATE STRUCTURE DURING CONTACT FORMATION
- Publication number 20120228679
- Publication date Sep 13, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hong-Dyi Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO FORM A SEMICONDUCTOR DEVICE HAVING GATE DIELECTRIC LAYERS...
- Publication number 20110306196
- Publication date Dec 15, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuang-Yuan Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multiple Deposition, Multiple Treatment Dielectric Layer For A Semi...
- Publication number 20110256682
- Publication date Oct 20, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Xiong-Fei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multilayer Hard Mask
- Publication number 20110171804
- Publication date Jul 14, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shiang-Bau Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO FORM A SEMICONDUCTOR DEVICE HAVING GATE DIELECTRIC LAYERS...
- Publication number 20110159678
- Publication date Jun 30, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuang-Yuan Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR A GATE REPLACEMENT PROCESS
- Publication number 20110081774
- Publication date Apr 7, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reducing Local Mismatch of Devices Using Cryo-Implantation
- Publication number 20110039390
- Publication date Feb 17, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Feng Nieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS STRUCTURE WITH MULTIPLE SPACERS
- Publication number 20110031538
- Publication date Feb 10, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bor Chiuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Sidewall-Free CESL for Enlarging ILD Gap-Fill Window
- Publication number 20100314690
- Publication date Dec 16, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Han-Pin Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PROTECTING A GATE STRUCTURE DURING CONTACT FORMATION
- Publication number 20100270627
- Publication date Oct 28, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hong-Dyi Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for backside polymer reduction in dry-etch process
- Publication number 20100190349
- Publication date Jul 29, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huang-Ming Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW K DIELECTRIC SURFACE DAMAGE CONTROL
- Publication number 20100173499
- Publication date Jul 8, 2010
- Taiwan Semiconductor Manufacturing Co., LTD
- Hun-Jan Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS WITH BILAYER DIELECTRICS
- Publication number 20090315125
- Publication date Dec 24, 2009
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fong-Yu Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE OXIDE LEAKAGE REDUCTION
- Publication number 20090047799
- Publication date Feb 19, 2009
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRIANGULAR SPACE ELEMENT FOR SEMICONDUCTOR DEVICE
- Publication number 20080308899
- Publication date Dec 18, 2008
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor device
- Publication number 20080242108
- Publication date Oct 2, 2008
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Weng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH DUAL-METAL GATE STRUCTURES AND FABRICATI...
- Publication number 20080188044
- Publication date Aug 7, 2008
- Taiwan Semiconductor Manufacturing Co., LTD
- Peng-Fu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multiple-time flash anneal process
- Publication number 20080182430
- Publication date Jul 31, 2008
- Jennifer Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming tensile stress films for NFET performance enhance...
- Publication number 20080138983
- Publication date Jun 12, 2008
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hao-Ming Lien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH DUAL-METAL GATE STRUCTURES AND FABRICATI...
- Publication number 20080099851
- Publication date May 1, 2008
- Taiwan Semiconductor Manufacturing Co., LTD
- Peng-Fu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming integrated circuit devices having n-MOSFET and p-...
- Publication number 20080096336
- Publication date Apr 24, 2008
- Peng-Soon Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS devices with continuous contact etch stop layer
- Publication number 20080093675
- Publication date Apr 24, 2008
- Liang-Gi Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Polysilicon levels for silicided structures including MOSFET gate e...
- Publication number 20080093682
- Publication date Apr 24, 2008
- Liang-Gi Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of making FUSI gate and resulting structure
- Publication number 20080085590
- Publication date Apr 10, 2008
- Liang-Gi Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS WITH BILAYER DIELECTRICS
- Publication number 20080070395
- Publication date Mar 20, 2008
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fong-Yu Yen
- H01 - BASIC ELECTRIC ELEMENTS

Hun-Jan Tao

Person

Patents Grantslast 30 patents

Sidewall free CESL for enlarging ILD gap-fill window

Sidewall-free CESL for enlarging ILD gap-fill window

Method for protecting a gate structure during contact formation

Methods for a gate replacement process

Method for protecting a gate structure during contact formation

Method for backside polymer reduction in dry-etch process

Method for protecting a gate structure during contact formation

Dual damascene interconnect in hybrid dielectric

Semiconductor devices and methods with bilayer dielectrics

Multilayer hard mask

Methods for a gate replacement process

CMOS structure with multiple spacers

Method to form a semiconductor device having gate dielectric layers...

Method for protecting a gate structure during contact formation

Low K dielectric surface damage control

Gate oxide leakage reduction

Method to form a semiconductor device having gate dielectric layers...

Semiconductor devices with dual-metal gate structures and fabricati...

Base oxide engineering for high-K gate stacks

Contact hole structures and contact structures and fabrication meth...

Triangular space element for semiconductor device

Multi-metal-oxide high-K gate dielectrics

MOS devices with continuous contact etch stop layer

Method and apparatus for backside polymer reduction in dry-etch pro...

Low K dielectric surface damage control

Multiple-time flash anneal process

Method for photoresist stripping and treatment of low-k dielectric...

Resolving pattern-loading issues of SiGe stressor

Semiconductor devices and methods with bilayer dielectrics

Method of forming integrated circuit devices having n-MOSFET and p-...

Patents Applicationslast 30 patents

SIDEWALL-FREE CESL FOR ENLARGING ILD GAP-FILL WINDOW

Method For Protecting a Gate Structure During Contact Formation

Method for Protecting a Gate Structure During Contact Formation

Sidewall-Free CESL for Enlarging ILD Gap-Fill Window

Methods for a Gate Replacement Process

METHOD FOR PROTECTING A GATE STRUCTURE DURING CONTACT FORMATION

METHOD TO FORM A SEMICONDUCTOR DEVICE HAVING GATE DIELECTRIC LAYERS...

Multiple Deposition, Multiple Treatment Dielectric Layer For A Semi...

Multilayer Hard Mask

METHOD TO FORM A SEMICONDUCTOR DEVICE HAVING GATE DIELECTRIC LAYERS...

METHODS FOR A GATE REPLACEMENT PROCESS

Reducing Local Mismatch of Devices Using Cryo-Implantation

CMOS STRUCTURE WITH MULTIPLE SPACERS

Sidewall-Free CESL for Enlarging ILD Gap-Fill Window

METHOD FOR PROTECTING A GATE STRUCTURE DURING CONTACT FORMATION

Method for backside polymer reduction in dry-etch process

LOW K DIELECTRIC SURFACE DAMAGE CONTROL

SEMICONDUCTOR DEVICES AND METHODS WITH BILAYER DIELECTRICS

GATE OXIDE LEAKAGE REDUCTION

TRIANGULAR SPACE ELEMENT FOR SEMICONDUCTOR DEVICE

Method for fabricating semiconductor device

SEMICONDUCTOR DEVICES WITH DUAL-METAL GATE STRUCTURES AND FABRICATI...

Multiple-time flash anneal process

Method of forming tensile stress films for NFET performance enhance...

SEMICONDUCTOR DEVICES WITH DUAL-METAL GATE STRUCTURES AND FABRICATI...

Method of forming integrated circuit devices having n-MOSFET and p-...

MOS devices with continuous contact etch stop layer

Polysilicon levels for silicided structures including MOSFET gate e...

Method of making FUSI gate and resulting structure

SEMICONDUCTOR DEVICES AND METHODS WITH BILAYER DIELECTRICS