Hung Y. Ng

Person

New Milford, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Substantially L-shaped silicide for contact
- Patent number 8,643,119
- Issue date Feb 4, 2014
- International Business Machines Corporation
- Zhijiong Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of improved SOI substrates using bulk semiconductor wafers
- Patent number 8,268,698
- Issue date Sep 18, 2012
- International Business Machines Corporation
- William K. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Opto-thermal annealing methods for forming metal gate and fully sil...
- Patent number 8,039,331
- Issue date Oct 18, 2011
- International Business Machines Corporation
- Scott D. Allen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of improved SOI substrates using bulk semiconductor wafers
- Patent number 7,932,158
- Issue date Apr 26, 2011
- International Business Machines Corporation
- William K. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual stress memory technique method and related structure
- Patent number 7,785,950
- Issue date Aug 31, 2010
- International Business Machines Corporation
- Sunfei Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained semiconductor device and method of making same
- Patent number 7,772,676
- Issue date Aug 10, 2010
- Infineon Technologies AG
- Jin-Ping Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of improved SOI substrates using bulk semiconductor wafers
- Patent number 7,452,784
- Issue date Nov 18, 2008
- International Business Machines Corporation
- William K. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming substantially L-shaped silicide contact for a sem...
- Patent number 7,442,619
- Issue date Oct 28, 2008
- International Business Machines Corporation
- Zhijiong Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Opto-thermal annealing methods for forming metal gate and fully sil...
- Patent number 7,410,852
- Issue date Aug 12, 2008
- International Business Machines Corporation
- Scott D. Allen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure to use an etch resistant liner on transistor gate structu...
- Patent number 7,307,323
- Issue date Dec 11, 2007
- International Business Machines Corporation
- Hung Y. Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure to use an etch resistant liner on transistor g...
- Patent number 7,064,027
- Issue date Jun 20, 2006
- International Business Machines Corporation
- Hung Y. Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vapor phase etch trim structure with top etch blocking layer
- Patent number 6,884,734
- Issue date Apr 26, 2005
- International Business Machines Corporation
- Frederick W. Buehrer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective nitride: oxide anisotropic etch process
- Patent number 6,656,375
- Issue date Dec 2, 2003
- International Business Machines Corporation
- Michael D. Armacost
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitrogen co-implantation to form shallow junction-extensions of p-t...
- Patent number 6,369,434
- Issue date Apr 9, 2002
- International Business Machines Corporation
- Kai Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for defining a pattern using an anti-reflective coating and...
- Patent number 6,030,541
- Issue date Feb 29, 2000
- International Business Machines Corporation
- James W. Adkisson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective and anisotropic dry etching
- Patent number 4,734,157
- Issue date Mar 29, 1988
- International Business Machines Corporation
- Susanna R. Carbaugh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FORMATION OF IMPROVED SOI SUBSTRATES USING BULK SEMICONDUCTOR WAFERS
- Publication number 20110147885
- Publication date Jun 23, 2011
- International Business Machines Corporation
- William K. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR DEVICE WITH EMBEDDED STRESSOR
- Publication number 20090242989
- Publication date Oct 1, 2009
- KEVIN K. CHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF IMPROVED SOI SUBSTRATES USING BULK SEMICONDUCTOR WAFERS
- Publication number 20090039461
- Publication date Feb 12, 2009
- International Business Machines Corporation
- William K. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTANTIALLY L-SHAPED SILICIDE FOR CONTACT AND RELATED METHOD
- Publication number 20080283934
- Publication date Nov 20, 2008
- Zhijiong Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTO-THERMAL ANNEALING METHODS FOR FORMING METAL GATE AND FULLY SIL...
- Publication number 20080220581
- Publication date Sep 11, 2008
- International Business Machines Corporation
- Scott D. Allen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE TO USE AN ETCH RESISTANT LINER ON TRANSISTOR G...
- Publication number 20080036017
- Publication date Feb 14, 2008
- Hung Y. Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained semiconductor device and method of making same
- Publication number 20070295989
- Publication date Dec 27, 2007
- Jin-Ping Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING ISOLATION REGION WITH VARIABLE LI...
- Publication number 20070293016
- Publication date Dec 20, 2007
- International Business Machines Corporation
- Zhijiong Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF IMPROVED SOI SUBSTRATES USING BULK SEMICONDUCTOR WAFERS
- Publication number 20070275537
- Publication date Nov 29, 2007
- International Business Machines Corporation
- William K. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTANTIALLY L-SHAPED SILICIDE FOR CONTACT AND RELATED METHOD
- Publication number 20070267753
- Publication date Nov 22, 2007
- International Business Machines Corporation
- Zhijiong Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Opto-thermal annealing methods for forming metal gate and fully sil...
- Publication number 20070249131
- Publication date Oct 25, 2007
- International Business Machines Corporation
- Scott D. Allen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL STRESS MEMORY TECHNIQUE METHOD AND RELATED STRUCTURE
- Publication number 20070105299
- Publication date May 10, 2007
- International Business Machines Corporation
- Sunfei Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and structure to use an etch resistant liner on transistor g...
- Publication number 20060145275
- Publication date Jul 6, 2006
- Hung Y. Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and structure to use an etch resistant liner on transistor g...
- Publication number 20050104095
- Publication date May 19, 2005
- International Business Machines Corporation
- Hung Y. Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vapor phase etch trim structure with top etch blocking layer
- Publication number 20040198030
- Publication date Oct 7, 2004
- International Business Machines Corporation
- Frederick W. Buehrer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for polysilicon conductor (PC) Trimming for shrinking critic...
- Publication number 20020142252
- Publication date Oct 3, 2002
- International Business Machines Corporation
- Hung Yip Ng
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Substantially L-shaped silicide for contact

Formation of improved SOI substrates using bulk semiconductor wafers

Opto-thermal annealing methods for forming metal gate and fully sil...

Formation of improved SOI substrates using bulk semiconductor wafers

Dual stress memory technique method and related structure

Strained semiconductor device and method of making same

Formation of improved SOI substrates using bulk semiconductor wafers

Method of forming substantially L-shaped silicide contact for a sem...

Opto-thermal annealing methods for forming metal gate and fully sil...

Structure to use an etch resistant liner on transistor gate structu...

Method and structure to use an etch resistant liner on transistor g...

Vapor phase etch trim structure with top etch blocking layer

Selective nitride: oxide anisotropic etch process

Nitrogen co-implantation to form shallow junction-extensions of p-t...

Process for defining a pattern using an anti-reflective coating and...

Selective and anisotropic dry etching

Patents Applicationslast 30 patents

FORMATION OF IMPROVED SOI SUBSTRATES USING BULK SEMICONDUCTOR WAFERS

COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR DEVICE WITH EMBEDDED STRESSOR

FORMATION OF IMPROVED SOI SUBSTRATES USING BULK SEMICONDUCTOR WAFERS

SUBSTANTIALLY L-SHAPED SILICIDE FOR CONTACT AND RELATED METHOD

OPTO-THERMAL ANNEALING METHODS FOR FORMING METAL GATE AND FULLY SIL...

METHOD AND STRUCTURE TO USE AN ETCH RESISTANT LINER ON TRANSISTOR G...

Strained semiconductor device and method of making same

SEMICONDUCTOR STRUCTURE INCLUDING ISOLATION REGION WITH VARIABLE LI...

FORMATION OF IMPROVED SOI SUBSTRATES USING BULK SEMICONDUCTOR WAFERS

SUBSTANTIALLY L-SHAPED SILICIDE FOR CONTACT AND RELATED METHOD

Opto-thermal annealing methods for forming metal gate and fully sil...

DUAL STRESS MEMORY TECHNIQUE METHOD AND RELATED STRUCTURE

Method and structure to use an etch resistant liner on transistor g...

Method and structure to use an etch resistant liner on transistor g...

Vapor phase etch trim structure with top etch blocking layer

Method for polysilicon conductor (PC) Trimming for shrinking critic...