Hussein I. Hanafi

Person

Basking Ridge, NJ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Distributed semiconductor device methods, apparatus, and systems
- Patent number 8,872,324
- Issue date Oct 28, 2014
- Micron Technology, Inc.
- Paul A. Farrar
- G11 - INFORMATION STORAGE
Information Patent Grant
Distributed semiconductor device methods, apparatus, and systems
- Patent number 8,729,691
- Issue date May 20, 2014
- Micron Technology, Inc.
- Paul D. Farrar
- G11 - INFORMATION STORAGE
Information Patent Grant
Distributed semiconductor device methods, apparatus, and systems
- Patent number 8,498,171
- Issue date Jul 30, 2013
- Micron Technology, Inc.
- Paul A. Farrar
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory in logic cell
- Patent number 8,367,505
- Issue date Feb 5, 2013
- Micron Technology, Inc.
- Hussein I. Hanafi
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell storage node length
- Patent number 8,324,676
- Issue date Dec 4, 2012
- Micron Technology, Inc.
- Hussein I. Hanafi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FIN field effect transistor
- Patent number 8,242,555
- Issue date Aug 14, 2012
- Micron Technology, Inc.
- Hussein I. Hanafi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Distributed semiconductor device methods, apparatus, and systems
- Patent number 8,237,254
- Issue date Aug 7, 2012
- Micron Technology, Inc.
- Paul A. Farrar
- G11 - INFORMATION STORAGE
Information Patent Grant
Fabrication of self-aligned gallium arsenide MOSFETS using damascen...
- Patent number 7,955,917
- Issue date Jun 7, 2011
- Micron Technology, Inc.
- Hussein I. Hanafi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Back gated SRAM cell
- Patent number 7,952,913
- Issue date May 31, 2011
- Micron Technology, Inc.
- Hussein I. Hanafi
- G11 - INFORMATION STORAGE
Information Patent Grant
Distributed semiconductor device methods, apparatus, and systems
- Patent number 7,952,184
- Issue date May 31, 2011
- Micron Technology, Inc.
- Paul A. Farrar
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and apparatus for improving SRAM cell stability by using boo...
- Patent number 7,934,181
- Issue date Apr 26, 2011
- International Business Machines Corporation
- Hussein I. Hanafi
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cells
- Patent number 7,928,503
- Issue date Apr 19, 2011
- Micron Technology, Inc.
- Hussein I. Hanafi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor devices
- Patent number 7,875,529
- Issue date Jan 25, 2011
- Micron Technology, Inc.
- Leonard Forbes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile SRAM cell
- Patent number 7,791,941
- Issue date Sep 7, 2010
- Micron Technology, Inc.
- Hussein I. Hanafi
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of forming memory cells
- Patent number 7,745,295
- Issue date Jun 29, 2010
- Micron Technology, Inc.
- Hussein I. Hanafi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried biasing wells in FETs (Field Effect Transistors)
- Patent number 7,732,286
- Issue date Jun 8, 2010
- International Business Machines Corporation
- Hussein I. Hanafi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Damascene gate field effect transistor with an internal spacer stru...
- Patent number 7,723,196
- Issue date May 25, 2010
- International Business Machines Corporation
- Supratik Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Back gated SRAM cell
- Patent number 7,710,765
- Issue date May 4, 2010
- Micron Technology, Inc.
- Hussein I. Hanafi
- G11 - INFORMATION STORAGE
Information Patent Grant
FIN field effect transistor
- Patent number 7,674,669
- Issue date Mar 9, 2010
- Micron Technology, Inc.
- Hussein I. Hanafi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-encapsulated FET (NNCFET)
- Patent number 7,648,880
- Issue date Jan 19, 2010
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell storage node length
- Patent number 7,646,053
- Issue date Jan 12, 2010
- Micron Technology, Inc.
- Hussein I. Hanafi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory in logic cell
- Patent number 7,633,801
- Issue date Dec 15, 2009
- Micron Technology, Inc.
- Hussein I. Hanafi
- G11 - INFORMATION STORAGE
Information Patent Grant
System, apparatus, and method to increase read and write stability...
- Patent number 7,613,031
- Issue date Nov 3, 2009
- Micron Technology, Inc.
- Hussein I. Hanafi
- G11 - INFORMATION STORAGE
Information Patent Grant
Transistor structure having interconnect to side of diffusion and r...
- Patent number 7,579,655
- Issue date Aug 25, 2009
- International Business Machines Corporation
- Hussein I. Hanafi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for improving SRAM cell stability by using boo...
- Patent number 7,512,908
- Issue date Mar 31, 2009
- International Business Machines Corporation
- Hussein I. Hanafi
- G11 - INFORMATION STORAGE
Information Patent Grant
Field effect transistor including damascene gate with an internal s...
- Patent number 7,479,684
- Issue date Jan 20, 2009
- International Business Machines Corporation
- Supratik Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backgated FinFET having different oxide thicknesses
- Patent number 7,476,946
- Issue date Jan 13, 2009
- International Business Machines Corporation
- Andres Bryant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-encapsulated FET (NNCFET)
- Patent number 7,442,612
- Issue date Oct 28, 2008
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of self-aligned gallium arsenide MOSFETs using damascen...
- Patent number 7,435,636
- Issue date Oct 14, 2008
- Micron Technology, Inc.
- Hussein I. Hanafi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to control device threshold of SOI MOSFET's
- Patent number 7,273,785
- Issue date Sep 25, 2007
- International Business Machines Corporation
- Robert H. Dennard
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DISTRIBUTED SEMICONDUCTOR DEVICE METHODS, APPARATUS, AND SYSTEMS
- Publication number 20140247638
- Publication date Sep 4, 2014
- Micron Technology, Inc.
- Paul A. Farrar
- G11 - INFORMATION STORAGE
Information Patent Application
DISTRIBUTED SEMICONDUCTOR DEVICE METHODS, APPARATUS, AND SYSTEMS
- Publication number 20130299999
- Publication date Nov 14, 2013
- Paul A. Farrar
- G11 - INFORMATION STORAGE
Information Patent Application
DISTRIBUTED SEMICONDUCTOR DEVICE METHODS, APPARATUS, AND SYSTEMS
- Publication number 20120302006
- Publication date Nov 29, 2012
- Paul A. Farrar
- G11 - INFORMATION STORAGE
Information Patent Application
DISTRIBUTED SEMICONDUCTOR DEVICE METHODS, APPARATUS, AND SYSTEMS
- Publication number 20110222328
- Publication date Sep 15, 2011
- Paul A. Farrar
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Cells
- Publication number 20100224930
- Publication date Sep 9, 2010
- Micron Technology, Inc.
- Hussein I. Hanafi
- B82 - NANO-TECHNOLOGY
Information Patent Application
BACK GATED SRAM CELL
- Publication number 20100188889
- Publication date Jul 29, 2010
- Micron Technology, Inc.
- Hussein I. Hanafi
- G11 - INFORMATION STORAGE
Information Patent Application
FIN FIELD EFFECT TRANSISTOR
- Publication number 20100133617
- Publication date Jun 3, 2010
- Micron Technology, Inc.
- Hussein I. Hanafi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL STORAGE NODE LENGTH
- Publication number 20100091577
- Publication date Apr 15, 2010
- Micron Technology, Inc.
- Hussein I. Hanafi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY IN LOGIC CELL
- Publication number 20100055871
- Publication date Mar 4, 2010
- Micron Technology, Inc.
- Hussein I. Hanafi
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Cells, And Methods Of Forming Memory Cells
- Publication number 20090134444
- Publication date May 28, 2009
- Hussein I. Hanafi
- B82 - NANO-TECHNOLOGY
Information Patent Application
DAMASCENE GATE FIELD EFFECT TRANSISTOR WITH AN INTERNAL SPACER STRU...
- Publication number 20090124057
- Publication date May 14, 2009
- International Business Machines Corporation
- Supratik Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE SRAM CELL
- Publication number 20090109734
- Publication date Apr 30, 2009
- Micron Technology, Inc.
- Hussein I. Hanafi
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL STORAGE NODE LENGTH
- Publication number 20090097310
- Publication date Apr 16, 2009
- Micron Technology, Inc.
- Hussein I. Hanafi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20090090950
- Publication date Apr 9, 2009
- Micron Technology, Inc.
- Leonard Forbes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK GATED SRAM CELL
- Publication number 20090086528
- Publication date Apr 2, 2009
- Micron Technology, Inc.
- Hussein I. Hanafi
- G11 - INFORMATION STORAGE
Information Patent Application
SYSTEM, APPARATUS, AND METHOD TO INCREASE READ AND WRITE STABILITY...
- Publication number 20090073782
- Publication date Mar 19, 2009
- Micron Technology, Inc.
- Hussein I. Hanafi
- G11 - INFORMATION STORAGE
Information Patent Application
FIN FIELD EFFECT TRANSISTOR
- Publication number 20090065853
- Publication date Mar 12, 2009
- Micron Technology, Inc.
- Hussein I. Hanafi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication of Self-Aligned Gallium Arsenide Mosfets Using Damascen...
- Publication number 20090011563
- Publication date Jan 8, 2009
- Micron Technology, Inc.
- Hussein I. Hanafi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory in logic cell
- Publication number 20080316828
- Publication date Dec 25, 2008
- Hussein I. Hanafi
- G11 - INFORMATION STORAGE
Information Patent Application
Programmable computing array
- Publication number 20080315917
- Publication date Dec 25, 2008
- Micron Technology, Inc.
- Leonard Forbes
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
NITRIDE-ENCAPSULATED FET (NNCFET)
- Publication number 20080286930
- Publication date Nov 20, 2008
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF SELF-ALIGNED GALLIUM ARSENIDE MOSFETS USING DAMASCEN...
- Publication number 20080237663
- Publication date Oct 2, 2008
- Hussein I. Hanafi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR IMPROVING SRAM CELL STABILTY BY USING BOOS...
- Publication number 20080225611
- Publication date Sep 18, 2008
- International Business Machines Corporation
- Hussein I. Hanafi
- G11 - INFORMATION STORAGE
Information Patent Application
Enhanced mobility MOSFET devices
- Publication number 20080079084
- Publication date Apr 3, 2008
- Micron Technology, Inc.
- Hussein I. Hanafi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Distributed semiconductor device methods, apparatus, and systems
- Publication number 20080054489
- Publication date Mar 6, 2008
- Micron Technology, Inc.
- Paul A. Farrar
- G11 - INFORMATION STORAGE
Information Patent Application
BURIED BIASING WELLS IN FETs (Field Effect Transistors)
- Publication number 20070293010
- Publication date Dec 20, 2007
- Hussein I. Hanafi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and apparatus for improving SRAM cell stability by using boo...
- Publication number 20070291528
- Publication date Dec 20, 2007
- International Business Machines Corporation
- Hussein I. Hanafi
- G11 - INFORMATION STORAGE
Information Patent Application
Nitride-encapsulated FET (NNCFET)
- Publication number 20060252241
- Publication date Nov 9, 2006
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKGATED FINFET HAVING DIFFERENT OXIDE THICKNESSES
- Publication number 20060237774
- Publication date Oct 26, 2006
- International Business Machines Corporation
- Andres Bryant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKGATED FINFET HAVING DIFFERENT OXIDE THICKNESSES
- Publication number 20060145195
- Publication date Jul 6, 2006
- International Business Machines Corporation
- Andres Bryant
- H01 - BASIC ELECTRIC ELEMENTS

Hussein I. Hanafi

Person

Patents Grantslast 30 patents

Distributed semiconductor device methods, apparatus, and systems

Distributed semiconductor device methods, apparatus, and systems

Distributed semiconductor device methods, apparatus, and systems

Memory in logic cell

Memory cell storage node length

FIN field effect transistor

Distributed semiconductor device methods, apparatus, and systems

Fabrication of self-aligned gallium arsenide MOSFETS using damascen...

Back gated SRAM cell

Distributed semiconductor device methods, apparatus, and systems

Method and apparatus for improving SRAM cell stability by using boo...

Memory cells

Semiconductor devices

Non-volatile SRAM cell

Methods of forming memory cells

Buried biasing wells in FETs (Field Effect Transistors)

Damascene gate field effect transistor with an internal spacer stru...

Back gated SRAM cell

FIN field effect transistor

Nitride-encapsulated FET (NNCFET)

Memory cell storage node length

Memory in logic cell

System, apparatus, and method to increase read and write stability...

Transistor structure having interconnect to side of diffusion and r...

Method and apparatus for improving SRAM cell stability by using boo...

Field effect transistor including damascene gate with an internal s...

Backgated FinFET having different oxide thicknesses

Nitride-encapsulated FET (NNCFET)

Fabrication of self-aligned gallium arsenide MOSFETs using damascen...

Method to control device threshold of SOI MOSFET's

Patents Applicationslast 30 patents

DISTRIBUTED SEMICONDUCTOR DEVICE METHODS, APPARATUS, AND SYSTEMS

DISTRIBUTED SEMICONDUCTOR DEVICE METHODS, APPARATUS, AND SYSTEMS

DISTRIBUTED SEMICONDUCTOR DEVICE METHODS, APPARATUS, AND SYSTEMS

DISTRIBUTED SEMICONDUCTOR DEVICE METHODS, APPARATUS, AND SYSTEMS

Memory Cells

BACK GATED SRAM CELL

FIN FIELD EFFECT TRANSISTOR

MEMORY CELL STORAGE NODE LENGTH

MEMORY IN LOGIC CELL

Memory Cells, And Methods Of Forming Memory Cells

DAMASCENE GATE FIELD EFFECT TRANSISTOR WITH AN INTERNAL SPACER STRU...

NON-VOLATILE SRAM CELL

MEMORY CELL STORAGE NODE LENGTH

SEMICONDUCTOR DEVICES

BACK GATED SRAM CELL

SYSTEM, APPARATUS, AND METHOD TO INCREASE READ AND WRITE STABILITY...

FIN FIELD EFFECT TRANSISTOR

Fabrication of Self-Aligned Gallium Arsenide Mosfets Using Damascen...

Memory in logic cell

Programmable computing array

NITRIDE-ENCAPSULATED FET (NNCFET)

FABRICATION OF SELF-ALIGNED GALLIUM ARSENIDE MOSFETS USING DAMASCEN...

METHOD AND APPARATUS FOR IMPROVING SRAM CELL STABILTY BY USING BOOS...

Enhanced mobility MOSFET devices

Distributed semiconductor device methods, apparatus, and systems

BURIED BIASING WELLS IN FETs (Field Effect Transistors)

Method and apparatus for improving SRAM cell stability by using boo...

Nitride-encapsulated FET (NNCFET)

BACKGATED FINFET HAVING DIFFERENT OXIDE THICKNESSES

BACKGATED FINFET HAVING DIFFERENT OXIDE THICKNESSES