HYEON-SEAG KIM

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SUNNYVALE, CA, US

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Patents Grantslast 30 patents

Information Patent Grant
Process for manufacturing shallow trenches filled with dielectric m...
- Patent number 6,455,912
- Issue date Sep 24, 2002
- Vantis Corporation
- Hyeon-Seag Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate insulator process for nanometer MOSFETS
- Patent number 6,413,826
- Issue date Jul 2, 2002
- Vantis Corporation
- Hyeon-Seag Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for manufacturing shallow trenches filled with dielectric m...
- Patent number 6,297,128
- Issue date Oct 2, 2001
- Vantis Corporation
- Hyeon-Seag Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Angled nitrogen ion implantation for minimizing mechanical stress o...
- Patent number 6,284,626
- Issue date Sep 4, 2001
- Vantis Corporation
- Hyeon-Seag Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of oxide regions having multiple thicknesses using mini...
- Patent number 6,133,164
- Issue date Oct 17, 2000
- Vantis Corporation
- Hyeon-Seag Kim
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method and system for determing an operating voltage using a STI in...
- Publication number 20030011395
- Publication date Jan 16, 2003
- Hyeon-Seag Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial growth method
- Publication number 20020185697
- Publication date Dec 12, 2002
- Hyeon-Seag Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and system for providing reducing thinning of field isolatio...
- Publication number 20020158284
- Publication date Oct 31, 2002
- Hyeon-Seag Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High voltage oxidation method for highly reliable flash memory devices
- Publication number 20020127799
- Publication date Sep 12, 2002
- Hyeon-Seag Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FARICATION OF HIGH QUALITY OXIDES BY CONTROLLING SPACING BETWEEN SE...
- Publication number 20020019143
- Publication date Feb 14, 2002
- HYEON-SEAG KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE INSULATOR PROCESS FOR NANOMETER MOSFETS
- Publication number 20020009855
- Publication date Jan 24, 2002
- HYEON-SEAG KIM
- H01 - BASIC ELECTRIC ELEMENTS