Irving T. Ho

Person

Poughkeepsie, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Single electrode U-MOSFET random access memory
- Patent number 4,462,040
- Issue date Jul 24, 1984
- International Business Machines Corporation
- Irving T. Ho
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for making single electrode U-MOSFET random access memory ut...
- Patent number 4,252,579
- Issue date Feb 24, 1981
- International Business Machines Corporation
- Irving T. Ho
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for forming a narrow dimensioned mask opening on a silicon b...
- Patent number 4,209,349
- Issue date Jun 24, 1980
- International Business Machines Corporation
- Irving T. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming diffusions having narrow dimensions utilizing re...
- Patent number 4,209,350
- Issue date Jun 24, 1980
- International Business Machines Corporation
- Irving T. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge injector transistor memory
- Patent number 4,090,254
- Issue date May 16, 1978
- International Business Machines Corporation
- Irving Tze Ho
- G11 - INFORMATION STORAGE
Information Patent Grant
Composite channel field effect transistor and method of fabrication
- Patent number 4,070,687
- Issue date Jan 24, 1978
- International Business Machines Corporation
- Irving Tze Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High reliability, low leakage, self-aligned silicon gate FET and me...
- Patent number 4,054,989
- Issue date Oct 25, 1977
- International Business Machines Corporation
- Irving T. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single-electrode charge-coupled random access memory cell with impu...
- Patent number 4,017,883
- Issue date Apr 12, 1977
- IBM Corporation
- Irving T. Ho
- G11 - INFORMATION STORAGE
Information Patent Grant
Optimal driver for LSI
- Patent number 4,016,431
- Issue date Apr 5, 1977
- International Business Machines Corporation
- Robert Athanasius Henle
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Single-electrode charge-coupled random access memory cell
- Patent number 4,014,036
- Issue date Mar 22, 1977
- IBM Corporation
- Irving T. Ho
- G11 - INFORMATION STORAGE
Information Patent Grant
High reliability, low leakage, self-aligned silicon gate FET and me...
- Patent number 3,943,542
- Issue date Mar 9, 1976
- International Business Machines, Corporation
- Irving T. Ho
- H01 - BASIC ELECTRIC ELEMENTS

Irving T. Ho

Person

Patents Grantslast 30 patents

Single electrode U-MOSFET random access memory

Method for making single electrode U-MOSFET random access memory ut...

Method for forming a narrow dimensioned mask opening on a silicon b...

Method for forming diffusions having narrow dimensions utilizing re...

Charge injector transistor memory

Composite channel field effect transistor and method of fabrication

High reliability, low leakage, self-aligned silicon gate FET and me...

Single-electrode charge-coupled random access memory cell with impu...

Optimal driver for LSI

Single-electrode charge-coupled random access memory cell

High reliability, low leakage, self-aligned silicon gate FET and me...