Isik C. Kizilyalli

Person

San Francisco, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Self-bypass diode function for gallium arsenide photovoltaic devices
- Patent number 11,695,088
- Issue date Jul 4, 2023
- UTICA LEASECO, LLC
- Hui Nie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-bypass diode function for gallium arsenide photovoltaic devices
- Patent number 11,211,506
- Issue date Dec 28, 2021
- UTICA LEASECO, LLC
- Hui Nie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-bypass diode function for gallium arsenide photovoltaic devices
- Patent number 11,121,272
- Issue date Sep 14, 2021
- UTICA LEASECO, LLC
- Andrew J. Ritenour
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Optoelectronic devices including heterojunction and intermediate layer
- Patent number 10,916,676
- Issue date Feb 9, 2021
- Alta Devices, Inc.
- Brendan M. Kayes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power gallium nitride electronics using miscut substrates
- Patent number 10,854,727
- Issue date Dec 1, 2020
- NEXGEN POWER SYSTEMS, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photovoltaic device with back side contacts
- Patent number 10,797,187
- Issue date Oct 6, 2020
- Alta Devices, Inc.
- Gang He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power gallium nitride electronics using miscut substrates
- Patent number 10,566,439
- Issue date Feb 18, 2020
- NEXGEN POWER SYSTEMS, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power gallium nitride electronics using miscut substrates
- Patent number 10,347,736
- Issue date Jul 9, 2019
- NEXGEN POWER SYSTEMS, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optoelectronic devices including heterojunction and intermediate layer
- Patent number 9,954,131
- Issue date Apr 24, 2018
- Alta Devices, Inc.
- Brendan M. Kayes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-bypass diode function for gallium arsenide photovoltaic devices
- Patent number 9,716,196
- Issue date Jul 25, 2017
- Alta Devices, Inc.
- Hui Nie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Textured metallic back reflector
- Patent number 9,691,921
- Issue date Jun 27, 2017
- Alta Devices, Inc.
- Harry Atwater
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a merged P-N junction and schottky diode with...
- Patent number 9,525,039
- Issue date Dec 20, 2016
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
InGaN ohmic source contacts for vertical power devices
- Patent number 9,508,838
- Issue date Nov 29, 2016
- Avogy, Inc.
- Linda Romano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for planar regrowth in GaN electronic devices
- Patent number 9,502,544
- Issue date Nov 22, 2016
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a GaN P-i-N diode using implantation
- Patent number 9,484,470
- Issue date Nov 1, 2016
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral GaN JFET with vertical drift region
- Patent number 9,472,684
- Issue date Oct 18, 2016
- Avogy, Inc.
- Hui Nie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN-based Schottky barrier diode with algan surface layer
- Patent number 9,450,112
- Issue date Sep 20, 2016
- Avogy, Inc.
- Richard J. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a gallium nitride merged P-I-N schottky (MPS)...
- Patent number 9,397,186
- Issue date Jul 19, 2016
- Avogy, Inc.
- Madhan M. Raj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power gallium nitride electronics using miscut substrates
- Patent number 9,368,582
- Issue date Jun 14, 2016
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Edge termination by ion implantation in gallium nitride
- Patent number 9,330,918
- Issue date May 3, 2016
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for a GaN vertical JFET utilizing a regrown channel
- Patent number 9,324,844
- Issue date Apr 26, 2016
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for diffusion and implantation in gallium nitride...
- Patent number 9,318,331
- Issue date Apr 19, 2016
- Avogy, Inc.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical gallium nitride JFET with gate and source electrodes on re...
- Patent number 9,318,619
- Issue date Apr 19, 2016
- Avogy, Inc.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for doping control in gallium nitride based devices
- Patent number 9,287,389
- Issue date Mar 15, 2016
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for a gallium nitride self-aligned vertical MESFET
- Patent number 9,269,793
- Issue date Feb 23, 2016
- Avogy, Inc.
- Richard J. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for floating guard rings in gallium nitride mater...
- Patent number 9,224,828
- Issue date Dec 29, 2015
- Avogy, Inc.
- Andrew Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky diode with buried layer in GaN materials
- Patent number 9,196,679
- Issue date Nov 24, 2015
- Avogy, Inc.
- Andrew Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for a GAN vertical JFET utilizing a regrown gate
- Patent number 9,184,305
- Issue date Nov 10, 2015
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming optoelectronic devices including heterojunction
- Patent number 9,178,099
- Issue date Nov 3, 2015
- Alta Devices, Inc.
- Hui Nie
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Monolithically integrated vertical JFET and Schottky diode
- Patent number 9,171,937
- Issue date Oct 27, 2015
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELF-BYPASS DIODE FUNCTION FOR GALLIUM ARSENIDE PHOTOVOLTAIC DEVICES
- Publication number 20220077333
- Publication date Mar 10, 2022
- UTICA LEASECO, LLC
- Hui NIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES
- Publication number 20200273965
- Publication date Aug 27, 2020
- NEXGEN POWER SYSTEMS, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES
- Publication number 20190348522
- Publication date Nov 14, 2019
- NEXGEN POWER SYSTEMS, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-BYPASS DIODE FUNCTION FOR GALLIUM ARSENIDE PHOTOVOLTAIC DEVICES
- Publication number 20190181281
- Publication date Jun 13, 2019
- Alta Devices, Inc.
- Andrew J. RITENOUR
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
OPTOELECTRONIC DEVICES INCLUDING HETEROJUNCTION AND INTERMEDIATE LAYER
- Publication number 20180240928
- Publication date Aug 23, 2018
- Alta Devices, Inc.
- Brendan M. KAYES
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES
- Publication number 20180166556
- Publication date Jun 14, 2018
- Nexgen Power Systems, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-BYPASS DIODE FUNCTION FOR GALLIUM ARSENIDE PHOTOVOLTAIC DEVICES
- Publication number 20170323987
- Publication date Nov 9, 2017
- Alta Devices, Inc.
- Hui NIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES
- Publication number 20170133481
- Publication date May 11, 2017
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR INTEGRATED POWER SUPPLY WITH ACCESSORY FUNCTIONS
- Publication number 20160241148
- Publication date Aug 18, 2016
- AVOGY, INC.
- Isik Kizilyalli
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
METHOD AND SYSTEM FOR GAN VERTICAL JFET UTILIZING A REGROWN GATE
- Publication number 20160190351
- Publication date Jun 30, 2016
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE BASED HIGH ELECTRON MOBILITY TRANSISTOR INCLUDING A...
- Publication number 20160190296
- Publication date Jun 30, 2016
- AVOGY, INC.
- Linda Romano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR FORMATION OF P-N JUNCTIONS IN GALLIUM NITRIDE...
- Publication number 20160043182
- Publication date Feb 11, 2016
- AVOGY, INC.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY DIODE WITH BURIED LAYER IN GAN MATERIALS
- Publication number 20160043198
- Publication date Feb 11, 2016
- AVOGY, INC.
- Andrew Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR GALLIUM NITRIDE ELECTRONIC DEVICES USING ENGI...
- Publication number 20160013045
- Publication date Jan 14, 2016
- AVOGY, INC.
- Hui Nie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A MERGED P-N JUNCTION AND SCHOTTKY DIODE WITH...
- Publication number 20160005835
- Publication date Jan 7, 2016
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A GAN P-I-N DIODE USING IMPLANTATION
- Publication number 20150364612
- Publication date Dec 17, 2015
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE FIELD EFFECT TRANSISTOR WITH BURIED FIELD PLATE PRO...
- Publication number 20150340449
- Publication date Nov 26, 2015
- AVOGY, INC.
- Ozgur Aktas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR PLANAR REGROWTH IN GAN ELECTRONIC DEVICES
- Publication number 20150340476
- Publication date Nov 26, 2015
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL JFET WITH SELF-ALI...
- Publication number 20150340514
- Publication date Nov 26, 2015
- AVOGY, INC.
- Don Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INGAN OHMIC SOURCE CONTACTS FOR VERTICAL POWER DEVICES
- Publication number 20150255582
- Publication date Sep 10, 2015
- AVOGY, INC.
- Linda Romano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHOTOVOLTAIC DEVICE WITH BACK SIDE CONTACTS
- Publication number 20150243815
- Publication date Aug 27, 2015
- Alta Devices, Inc.
- Gang HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL TRANSISTOR
- Publication number 20150243758
- Publication date Aug 27, 2015
- AVOGY, INC.
- Hui Nie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTOELECTRONIC DEVICES INCLUDING HETEROJUNCTION AND INTERMEDIATE LAYER
- Publication number 20150228835
- Publication date Aug 13, 2015
- Brendan M. KAYES
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A GALLIUM NITRIDE MERGED P-I-N SCHOTTKY (MPS)...
- Publication number 20150200268
- Publication date Jul 16, 2015
- AVOGY, INC.
- Madhan M. Raj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EDGE TERMINATION BY ION IMPLANTATION IN GALLIUM NITRIDE
- Publication number 20150200097
- Publication date Jul 16, 2015
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR A GALLIUM NITRIDE SELF-ALIGNED VERTICAL MESFET
- Publication number 20150179772
- Publication date Jun 25, 2015
- AVOGY, INC.
- Richard J. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY DIODE WITH BURIED LAYER IN GAN MATERIALS
- Publication number 20150179733
- Publication date Jun 25, 2015
- AVOGY, INC.
- Andrew Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR DOPING CONTROL IN GALLIUM NITRIDE BASED DEVICES
- Publication number 20150155372
- Publication date Jun 4, 2015
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL GALLIUM NITRIDE JFET WITH GATE AND SOURCE ELECTRODES ON RE...
- Publication number 20150137140
- Publication date May 21, 2015
- AVOGY, INC.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHICALLY INTEGRATED VERTICAL JFET AND SCHOTTKY DIODE
- Publication number 20150140746
- Publication date May 21, 2015
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS

Isik C. Kizilyalli

Person

Patents Grantslast 30 patents

Self-bypass diode function for gallium arsenide photovoltaic devices

Self-bypass diode function for gallium arsenide photovoltaic devices

Self-bypass diode function for gallium arsenide photovoltaic devices

Optoelectronic devices including heterojunction and intermediate layer

High power gallium nitride electronics using miscut substrates

Photovoltaic device with back side contacts

High power gallium nitride electronics using miscut substrates

High power gallium nitride electronics using miscut substrates

Optoelectronic devices including heterojunction and intermediate layer

Self-bypass diode function for gallium arsenide photovoltaic devices

Textured metallic back reflector

Method of fabricating a merged P-N junction and schottky diode with...

InGaN ohmic source contacts for vertical power devices

Method and system for planar regrowth in GaN electronic devices

Method of fabricating a GaN P-i-N diode using implantation

Lateral GaN JFET with vertical drift region

GaN-based Schottky barrier diode with algan surface layer

Method of fabricating a gallium nitride merged P-I-N schottky (MPS)...

High power gallium nitride electronics using miscut substrates

Edge termination by ion implantation in gallium nitride

Method and system for a GaN vertical JFET utilizing a regrown channel

Method and system for diffusion and implantation in gallium nitride...

Vertical gallium nitride JFET with gate and source electrodes on re...

Method and system for doping control in gallium nitride based devices

Method and system for a gallium nitride self-aligned vertical MESFET

Method and system for floating guard rings in gallium nitride mater...

Schottky diode with buried layer in GaN materials

Method and system for a GAN vertical JFET utilizing a regrown gate

Methods for forming optoelectronic devices including heterojunction

Monolithically integrated vertical JFET and Schottky diode

Patents Applicationslast 30 patents

SELF-BYPASS DIODE FUNCTION FOR GALLIUM ARSENIDE PHOTOVOLTAIC DEVICES

HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES

HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES

SELF-BYPASS DIODE FUNCTION FOR GALLIUM ARSENIDE PHOTOVOLTAIC DEVICES

OPTOELECTRONIC DEVICES INCLUDING HETEROJUNCTION AND INTERMEDIATE LAYER

HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES

SELF-BYPASS DIODE FUNCTION FOR GALLIUM ARSENIDE PHOTOVOLTAIC DEVICES

HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES

METHOD AND SYSTEM FOR INTEGRATED POWER SUPPLY WITH ACCESSORY FUNCTIONS

METHOD AND SYSTEM FOR GAN VERTICAL JFET UTILIZING A REGROWN GATE

GALLIUM NITRIDE BASED HIGH ELECTRON MOBILITY TRANSISTOR INCLUDING A...

METHOD AND SYSTEM FOR FORMATION OF P-N JUNCTIONS IN GALLIUM NITRIDE...

SCHOTTKY DIODE WITH BURIED LAYER IN GAN MATERIALS

METHOD AND SYSTEM FOR GALLIUM NITRIDE ELECTRONIC DEVICES USING ENGI...

METHOD OF FABRICATING A MERGED P-N JUNCTION AND SCHOTTKY DIODE WITH...

METHOD OF FABRICATING A GAN P-I-N DIODE USING IMPLANTATION

GALLIUM NITRIDE FIELD EFFECT TRANSISTOR WITH BURIED FIELD PLATE PRO...

METHOD AND SYSTEM FOR PLANAR REGROWTH IN GAN ELECTRONIC DEVICES

METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL JFET WITH SELF-ALI...

INGAN OHMIC SOURCE CONTACTS FOR VERTICAL POWER DEVICES

PHOTOVOLTAIC DEVICE WITH BACK SIDE CONTACTS

METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL TRANSISTOR

OPTOELECTRONIC DEVICES INCLUDING HETEROJUNCTION AND INTERMEDIATE LAYER

METHOD OF FABRICATING A GALLIUM NITRIDE MERGED P-I-N SCHOTTKY (MPS)...

EDGE TERMINATION BY ION IMPLANTATION IN GALLIUM NITRIDE

METHOD AND SYSTEM FOR A GALLIUM NITRIDE SELF-ALIGNED VERTICAL MESFET

SCHOTTKY DIODE WITH BURIED LAYER IN GAN MATERIALS

METHOD AND SYSTEM FOR DOPING CONTROL IN GALLIUM NITRIDE BASED DEVICES

VERTICAL GALLIUM NITRIDE JFET WITH GATE AND SOURCE ELECTRODES ON RE...

MONOLITHICALLY INTEGRATED VERTICAL JFET AND SCHOTTKY DIODE