Iu-Meng Tom Ho

Person

Milpitas, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Power and ground shield mesh to remove both capacitive and inductiv...
- Patent number 8,692,297
- Issue date Apr 8, 2014
- Synopsys, Inc.
- Iu-Meng Tom Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power and ground shield mesh to remove both capacitive and inductiv...
- Patent number 7,774,186
- Issue date Aug 10, 2010
- Synopsys, Inc.
- Iu-Meng Tom Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power and ground shield mesh to remove both capacitive and inductiv...
- Patent number 7,436,008
- Issue date Oct 14, 2008
- Synopsys, Inc.
- Iu-Meng Tom Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic memory with binary storage elements
- Patent number 7,352,619
- Issue date Apr 1, 2008
- IOTA Technology, Inc.
- Iu-Meng Tom Ho
- G11 - INFORMATION STORAGE
Information Patent Grant
Power and ground shield mesh to remove both capacitive and inductiv...
- Patent number 7,217,887
- Issue date May 15, 2007
- Synplicity, Inc.
- Iu-Meng Tom Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory
- Patent number 7,212,427
- Issue date May 1, 2007
- Symetrix Corporation
- Iu Meng Tom Ho
- G11 - INFORMATION STORAGE
Information Patent Grant
Power and ground shield mesh to remove both capacitive and inductiv...
- Patent number 6,734,472
- Issue date May 11, 2004
- Synplicity, Inc.
- Iu-Meng Tom Ho
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Power and Ground Shield Mesh to Remove Both Capacitive and Inductiv...
- Publication number 20100301397
- Publication date Dec 2, 2010
- Iu-Meng Tom Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER AND GROUND SHIELD MESH TO REMOVE BOTH CAPACITIVE AND INDUCTI...
- Publication number 20090032846
- Publication date Feb 5, 2009
- Synopsys, Inc.
- Iu-Meng Tom Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power and ground shield mesh to remove both capacitive and inductiv...
- Publication number 20070120261
- Publication date May 31, 2007
- Iu-Meng Tom Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Single event effect (SEE) tolerant circuit design strategy for SOI...
- Publication number 20060187700
- Publication date Aug 24, 2006
- Iota Technology, Inc.
- Iu-Meng Tom Ho
- G11 - INFORMATION STORAGE
Information Patent Application
Electronic memory with binary storage elements
- Publication number 20060083098
- Publication date Apr 20, 2006
- Iota Technology, Inc.
- Iu-Meng Tom Ho
- G11 - INFORMATION STORAGE
Information Patent Application
Electronic memory with tri-level cell pair
- Publication number 20050174841
- Publication date Aug 11, 2005
- Iota Technology, Inc.
- Iu-Meng Tom Ho
- G11 - INFORMATION STORAGE
Information Patent Application
Power and ground shield mesh to remove both capacitive and inductiv...
- Publication number 20040178424
- Publication date Sep 16, 2004
- Iu-Meng Tom Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric memory
- Publication number 20030206430
- Publication date Nov 6, 2003
- Iu Meng Tom Ho
- G11 - INFORMATION STORAGE
Information Patent Application
Power and ground shield mesh to remove both capacitive and inductiv...
- Publication number 20030201472
- Publication date Oct 30, 2003
- Iu-Meng Tom Ho
- H01 - BASIC ELECTRIC ELEMENTS

Iu-Meng Tom Ho

Person

Patents Grantslast 30 patents

Power and ground shield mesh to remove both capacitive and inductiv...

Power and ground shield mesh to remove both capacitive and inductiv...

Power and ground shield mesh to remove both capacitive and inductiv...

Electronic memory with binary storage elements

Power and ground shield mesh to remove both capacitive and inductiv...

Ferroelectric memory

Power and ground shield mesh to remove both capacitive and inductiv...

Patents Applicationslast 30 patents

Power and Ground Shield Mesh to Remove Both Capacitive and Inductiv...

POWER AND GROUND SHIELD MESH TO REMOVE BOTH CAPACITIVE AND INDUCTI...

Power and ground shield mesh to remove both capacitive and inductiv...

Single event effect (SEE) tolerant circuit design strategy for SOI...

Electronic memory with binary storage elements

Electronic memory with tri-level cell pair

Power and ground shield mesh to remove both capacitive and inductiv...

Ferroelectric memory

Power and ground shield mesh to remove both capacitive and inductiv...