Jacob Anthony HERNANDEZ

Person

Morgan Hill, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method for manufacturing a magnetic random-access memory device usi...
- Patent number 12,069,957
- Issue date Aug 20, 2024
- Integrated Silicon Solution, (Cayman) Inc.
- Jorge Vasquez
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction element with RU hard mask for use in magne...
- Patent number 11,723,217
- Issue date Aug 8, 2023
- Integrated Silicon Solution, (Cayman) Inc.
- Mustafa Pinarbasi
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for manufacturing a magnetic random-access memory device usi...
- Patent number 11,329,217
- Issue date May 10, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Jorge Vasquez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction element with Ru hard mask for use in magne...
- Patent number 11,329,100
- Issue date May 10, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Mustafa Pinarbasi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a magnetic memory element using Ru and dia...
- Patent number 10,903,002
- Issue date Jan 26, 2021
- Spin Memory, Inc.
- Mustafa Pinarbasi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polishing stop layer(s) for processing arrays of semiconductor elem...
- Patent number 10,777,736
- Issue date Sep 15, 2020
- Spin Memory, Inc.
- Mustafa Michael Pinarbasi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing high annealing temperature perpendicular ma...
- Patent number 10,734,574
- Issue date Aug 4, 2020
- Spin Memory, Inc.
- Bartlomiej Adam Kardasz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High annealing temperature perpendicular magnetic anisotropy struct...
- Patent number 10,468,590
- Issue date Nov 5, 2019
- Spin Memory, Inc.
- Bartlomiej Adam Kardasz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polishing stop layer(s) for processing arrays of semiconductor elem...
- Patent number 9,773,974
- Issue date Sep 26, 2017
- SPIN TRANSFER TECHNOLOGIES, INC.
- Mustafa Michael Pinarbasi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR MANUFACTURING A MAGNETIC RANDOM-ACCESS MEMORY DEVICE USI...
- Publication number 20220246842
- Publication date Aug 4, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Jorge Vasquez
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION ELEMENT WITH RU HARD MASK FOR USE IN MAGNE...
- Publication number 20220238601
- Publication date Jul 28, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Mustafa Pinarbasi
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION ELEMENT WITH RU HARD MASK FOR USE IN MAGNE...
- Publication number 20200343298
- Publication date Oct 29, 2020
- Spin Memory, Inc.
- Mustafa Pinarbasi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A MAGNETIC MEMORY ELEMENT USING RU AND DIA...
- Publication number 20200343042
- Publication date Oct 29, 2020
- Spin Memory, Inc.
- Mustafa Pinarbasi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A MAGNETIC RANDOM-ACCESS MEMORY DEVICE USI...
- Publication number 20200243757
- Publication date Jul 30, 2020
- Spin Memory, Inc.
- Jorge Vasquez
- G11 - INFORMATION STORAGE
Information Patent Application
Method of Manufacturing High Annealing Temperature Perpendicular Ma...
- Publication number 20200035914
- Publication date Jan 30, 2020
- Spin Memory, Inc.
- Bartlomiej Adam KARDASZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLISHING STOP LAYER(S) FOR PROCESSING ARRAYS OF SEMICONDUCTOR ELEM...
- Publication number 20170346002
- Publication date Nov 30, 2017
- SPIN TRANFER TECHNOLOGIES, INC.
- Mustafa Michael Pinarbasi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLISHING STOP LAYER(S) FOR PROCESSING ARRAYS OF SEMICONDUCTOR ELEM...
- Publication number 20170033283
- Publication date Feb 2, 2017
- Spin Transfer Technologies, Inc.
- Mustafa Michael PINARBASI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ANNEALING TEMPERATURE PERPENDICULAR MAGNETIC ANISOTROPY STRUCT...
- Publication number 20160315118
- Publication date Oct 27, 2016
- Spin Transfer Technologies, Inc.
- Bartlomiej Adam KARDASZ
- H01 - BASIC ELECTRIC ELEMENTS

Jacob Anthony HERNANDEZ

Person

Patents Grantslast 30 patents

Method for manufacturing a magnetic random-access memory device usi...

Magnetic tunnel junction element with RU hard mask for use in magne...

Method for manufacturing a magnetic random-access memory device usi...

Magnetic tunnel junction element with Ru hard mask for use in magne...

Method for manufacturing a magnetic memory element using Ru and dia...

Polishing stop layer(s) for processing arrays of semiconductor elem...

Method of manufacturing high annealing temperature perpendicular ma...

High annealing temperature perpendicular magnetic anisotropy struct...

Polishing stop layer(s) for processing arrays of semiconductor elem...

Patents Applicationslast 30 patents

METHOD FOR MANUFACTURING A MAGNETIC RANDOM-ACCESS MEMORY DEVICE USI...

MAGNETIC TUNNEL JUNCTION ELEMENT WITH RU HARD MASK FOR USE IN MAGNE...

MAGNETIC TUNNEL JUNCTION ELEMENT WITH RU HARD MASK FOR USE IN MAGNE...

METHOD FOR MANUFACTURING A MAGNETIC MEMORY ELEMENT USING RU AND DIA...

METHOD FOR MANUFACTURING A MAGNETIC RANDOM-ACCESS MEMORY DEVICE USI...

Method of Manufacturing High Annealing Temperature Perpendicular Ma...

POLISHING STOP LAYER(S) FOR PROCESSING ARRAYS OF SEMICONDUCTOR ELEM...

POLISHING STOP LAYER(S) FOR PROCESSING ARRAYS OF SEMICONDUCTOR ELEM...

HIGH ANNEALING TEMPERATURE PERPENDICULAR MAGNETIC ANISOTROPY STRUCT...