Jaeshin Cho

Person

Gilbert, AZ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Plasma processing method
- Patent number 6,334,929
- Issue date Jan 1, 2002
- Motorola, Inc.
- Kelly W. Kyler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an ohmic contact to a III-V semiconductor material
- Patent number 6,057,219
- Issue date May 2, 2000
- Motorola, Inc.
- Jaeshin Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method utilizing an etch stop layer
- Patent number 5,707,901
- Issue date Jan 13, 1998
- Motorola, Inc.
- Jaeshin Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V semiconductor gate structure and method of manufacture
- Patent number 5,619,064
- Issue date Apr 8, 1997
- Motorola, Inc.
- Jaeshin Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned FET having etched ohmic contacts
- Patent number 5,583,355
- Issue date Dec 10, 1996
- Motorola, Inc.
- Bruce A. Bernhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacture of multilayer dielectric on a III-V substrate
- Patent number 5,512,518
- Issue date Apr 30, 1996
- Motorola, Inc.
- Jaeshin Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a III-V semiconductor gate structure
- Patent number 5,484,740
- Issue date Jan 16, 1996
- Motorola, Inc.
- Jaeshin Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making ohmic contacts to a complementary III-V semiconduc...
- Patent number 5,444,016
- Issue date Aug 22, 1995
- Jonathan K. Abrokwah
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a GaAs FET having etched ohmic contacts
- Patent number 5,389,564
- Issue date Feb 14, 1995
- Motorola, Inc.
- Bruce A. Bernhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an etched ohmic contact
- Patent number 5,387,548
- Issue date Feb 7, 1995
- Motorola, Inc.
- Jaeshin Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for making and using a shallow semiconductor junction
- Patent number 5,384,269
- Issue date Jan 24, 1995
- Motorola, Inc.
- Jaeshin Cho
- H01 - BASIC ELECTRIC ELEMENTS

Jaeshin Cho

Person

Patents Grantslast 30 patents

Plasma processing method

Method of forming an ohmic contact to a III-V semiconductor material

Method utilizing an etch stop layer

III-V semiconductor gate structure and method of manufacture

Self-aligned FET having etched ohmic contacts

Method of manufacture of multilayer dielectric on a III-V substrate

Method of manufacturing a III-V semiconductor gate structure

Method of making ohmic contacts to a complementary III-V semiconduc...

Method of forming a GaAs FET having etched ohmic contacts

Method of forming an etched ohmic contact

Methods for making and using a shallow semiconductor junction