Jagar Singh

Person

Malta, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Lateral bipolar transistor
- Patent number 12,159,926
- Issue date Dec 3, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistors
- Patent number 12,074,211
- Issue date Aug 27, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor
- Patent number 11,967,635
- Issue date Apr 23, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-based lateral bipolar junction transistor with reduced base res...
- Patent number 11,967,637
- Issue date Apr 23, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Ali Razavieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor with gated collector
- Patent number 11,935,923
- Issue date Mar 19, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Alexander Derrickson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistors including a portion of a base layer in...
- Patent number 11,848,374
- Issue date Dec 19, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor
- Patent number 11,843,034
- Issue date Dec 12, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor
- Patent number 11,837,460
- Issue date Dec 5, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar junction transistor including a stress layer and me...
- Patent number 11,837,653
- Issue date Dec 5, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor
- Patent number 11,810,969
- Issue date Nov 7, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Annular bipolar transistors
- Patent number 11,804,542
- Issue date Oct 31, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Alexander M. Derrickson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor structure with base over semiconductor b...
- Patent number 11,784,224
- Issue date Oct 10, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistors including wrap-around emitter and coll...
- Patent number 11,769,806
- Issue date Sep 26, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistors including a stress liner
- Patent number 11,721,722
- Issue date Aug 8, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-self-aligned lateral bipolar junction transistors
- Patent number 11,710,771
- Issue date Jul 25, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Alexander Derrickson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar junction transistors having an emitter extension an...
- Patent number 11,652,142
- Issue date May 16, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Mankyu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistor (BJT) structure and related method
- Patent number 11,588,044
- Issue date Feb 21, 2023
- GLOBALFOUNDRIES U.S. INC.
- Alexander M. Derrickson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure with polycrystalline active region fill shape(s), and rel...
- Patent number 11,588,056
- Issue date Feb 21, 2023
- GLOBALFOUNDRIES U.S. INC.
- Mark D. Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar junction transistor and method
- Patent number 11,575,029
- Issue date Feb 7, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Alexander M. Derrickson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode structures
- Patent number 11,508,810
- Issue date Nov 22, 2022
- GLOBALFOUNDRIES Inc.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-based Schottky diode for integrated circuit (IC) products and m...
- Patent number 11,462,648
- Issue date Oct 4, 2022
- GLOBALFOUNDRIES U.S. INC.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-based laterally diffused structure having a gate with two adjac...
- Patent number 11,456,384
- Issue date Sep 27, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure providing charge controlled electronic fuse
- Patent number 11,387,353
- Issue date Jul 12, 2022
- GLOBALFOUNDRIES U.S. INC.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate controlled lateral bipolar junction/heterojunction transistors
- Patent number 11,276,770
- Issue date Mar 15, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Mankyu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with doped region adjacent isolation structure...
- Patent number 11,195,947
- Issue date Dec 7, 2021
- GLOBALFOUNDRIES U.S. INC.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage diode finFET platform designs
- Patent number 11,164,978
- Issue date Nov 2, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC structure base and inner E/C material on raised insulator, and m...
- Patent number 11,152,496
- Issue date Oct 19, 2021
- GLOBALFOUNDRIES U.S. INC.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming lateral heterojunction bipolar devices and the r...
- Patent number 11,133,397
- Issue date Sep 28, 2021
- GLOBALFOUNDRIES U.S. INC.
- Alexander Lee Martin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetrical lateral heterojunction bipolar transistors
- Patent number 11,127,843
- Issue date Sep 21, 2021
- GLOBALFOUNDRIES U.S. INC.
- Judson Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage transistor with fin source/drain regions and trench ga...
- Patent number 11,127,818
- Issue date Sep 21, 2021
- GLOBALFOUNDRIES U.S. INC.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Dual-Thickness Active Area Architecture for SOI FETS
- Publication number 20240429239
- Publication date Dec 26, 2024
- pSemi Corporation
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-Performance LDMOS Structures
- Publication number 20240421225
- Publication date Dec 19, 2024
- MURATA MANUFACTURING CO., LTD.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR TRANSISTORS
- Publication number 20240363741
- Publication date Oct 31, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Leakage Replacement Metal Gate FET
- Publication number 20240313081
- Publication date Sep 19, 2024
- MURATA MANUFACTURING CO., LTD.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE WITH INDUCTOR EMBEDDED IN BONDED SEMICONDUCTOR SUBSTRATES...
- Publication number 20240145382
- Publication date May 2, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Ravi P. Srivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR TRANSISTOR WITH GATED COLLECTOR
- Publication number 20240136400
- Publication date Apr 25, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Alexander Derrickson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING FIELD EFFECT TRANSISTOR WITH SCAL...
- Publication number 20240047555
- Publication date Feb 8, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Anton V. Tokranov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE WITH HYBRID GATE DIELECTRIC STRUCTURE AND ASYM...
- Publication number 20240030343
- Publication date Jan 25, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Saloni Chaurasia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR TRANSISTORS
- Publication number 20240030320
- Publication date Jan 25, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR TRANSISTOR
- Publication number 20240021713
- Publication date Jan 18, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY DIFFUSED METAL-OXIDE SEMICONDUCTOR WITH GATE CONTACT
- Publication number 20230317815
- Publication date Oct 5, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL DIFFUSION FIELD EFFECT TRANSISTOR WITH SILICON-ON-INSULATOR...
- Publication number 20230307539
- Publication date Sep 28, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH ISOLATION HAVING THREE PORTIONS WITH DIFFERENT MATERIALS, AN...
- Publication number 20230238428
- Publication date Jul 27, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Rong-Ting Liou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR JUNCTION TRANSISTORS HAVING AN EMITTER EXTENSION AN...
- Publication number 20230092435
- Publication date Mar 23, 2023
- GLOBALFOUNDRIES U.S. Inc.
- MANKYU YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTORS INCLUDING A PORTION OF A BASE LAYER IN...
- Publication number 20230084007
- Publication date Mar 16, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTORS INCLUDING WRAP-AROUND EMITTER AND COLL...
- Publication number 20230075062
- Publication date Mar 9, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR TRANSISTOR
- Publication number 20230075949
- Publication date Mar 9, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR TRANSISTOR
- Publication number 20230061219
- Publication date Mar 2, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR JUNCTION TRANSISTOR INCLUDING A STRESS LAYER AND ME...
- Publication number 20230065785
- Publication date Mar 2, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR TRANSISTOR
- Publication number 20230062747
- Publication date Mar 2, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR TRANSISTOR STRUCTURE WITH BASE OVER SEMICONDUCTOR B...
- Publication number 20230061482
- Publication date Mar 2, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR TRANSISTOR
- Publication number 20230061717
- Publication date Mar 2, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-BASED LATERAL BIPOLAR JUNCTION TRANSISTOR WITH REDUCED BASE RES...
- Publication number 20230061156
- Publication date Mar 2, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Ali Razavieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR TRANSISTOR WITH GATED COLLECTOR
- Publication number 20230067486
- Publication date Mar 2, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Alexander Derrickson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-SELF-ALIGNED LATERAL BIPOLAR JUNCTION TRANSISTORS
- Publication number 20230069207
- Publication date Mar 2, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Alexander Derrickson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANNULAR BIPOLAR TRANSISTORS
- Publication number 20230063301
- Publication date Mar 2, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Alexander M. Derrickson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTORS INCLUDING A STRESS LINER
- Publication number 20230063900
- Publication date Mar 2, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC LATERAL BIPOLAR TRANSISTOR AND METHOD
- Publication number 20230032080
- Publication date Feb 2, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Alexander M. Derrickson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR JUNCTION TRANSISTOR AND METHOD
- Publication number 20220376093
- Publication date Nov 24, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Alexander M. Derrickson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTOR (BJT) STRUCTURE AND RELATED METHOD
- Publication number 20220173230
- Publication date Jun 2, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Alexander M. Derrickson
- H01 - BASIC ELECTRIC ELEMENTS

Jagar Singh

Person

Patents Grantslast 30 patents

Lateral bipolar transistor

Lateral bipolar transistors

Lateral bipolar transistor

Fin-based lateral bipolar junction transistor with reduced base res...

Lateral bipolar transistor with gated collector

Bipolar junction transistors including a portion of a base layer in...

Lateral bipolar transistor

Lateral bipolar transistor

Lateral bipolar junction transistor including a stress layer and me...

Lateral bipolar transistor

Annular bipolar transistors

Lateral bipolar transistor structure with base over semiconductor b...

Bipolar junction transistors including wrap-around emitter and coll...

Bipolar junction transistors including a stress liner

Non-self-aligned lateral bipolar junction transistors

Lateral bipolar junction transistors having an emitter extension an...

Bipolar junction transistor (BJT) structure and related method

Structure with polycrystalline active region fill shape(s), and rel...

Lateral bipolar junction transistor and method

Diode structures

Fin-based Schottky diode for integrated circuit (IC) products and m...

Fin-based laterally diffused structure having a gate with two adjac...

Structure providing charge controlled electronic fuse

Gate controlled lateral bipolar junction/heterojunction transistors

Semiconductor device with doped region adjacent isolation structure...

High-voltage diode finFET platform designs

IC structure base and inner E/C material on raised insulator, and m...

Method for forming lateral heterojunction bipolar devices and the r...

Asymmetrical lateral heterojunction bipolar transistors

High voltage transistor with fin source/drain regions and trench ga...

Patents Applicationslast 30 patents

Dual-Thickness Active Area Architecture for SOI FETS

High-Performance LDMOS Structures

LATERAL BIPOLAR TRANSISTORS

Low Leakage Replacement Metal Gate FET

STRUCTURE WITH INDUCTOR EMBEDDED IN BONDED SEMICONDUCTOR SUBSTRATES...

LATERAL BIPOLAR TRANSISTOR WITH GATED COLLECTOR

SEMICONDUCTOR STRUCTURE INCLUDING FIELD EFFECT TRANSISTOR WITH SCAL...

TRANSISTOR STRUCTURE WITH HYBRID GATE DIELECTRIC STRUCTURE AND ASYM...

LATERAL BIPOLAR TRANSISTORS

LATERAL BIPOLAR TRANSISTOR

LATERALLY DIFFUSED METAL-OXIDE SEMICONDUCTOR WITH GATE CONTACT

LATERAL DIFFUSION FIELD EFFECT TRANSISTOR WITH SILICON-ON-INSULATOR...

TRENCH ISOLATION HAVING THREE PORTIONS WITH DIFFERENT MATERIALS, AN...

LATERAL BIPOLAR JUNCTION TRANSISTORS HAVING AN EMITTER EXTENSION AN...

BIPOLAR JUNCTION TRANSISTORS INCLUDING A PORTION OF A BASE LAYER IN...

BIPOLAR JUNCTION TRANSISTORS INCLUDING WRAP-AROUND EMITTER AND COLL...

LATERAL BIPOLAR TRANSISTOR

LATERAL BIPOLAR TRANSISTOR

LATERAL BIPOLAR JUNCTION TRANSISTOR INCLUDING A STRESS LAYER AND ME...

LATERAL BIPOLAR TRANSISTOR

LATERAL BIPOLAR TRANSISTOR STRUCTURE WITH BASE OVER SEMICONDUCTOR B...

LATERAL BIPOLAR TRANSISTOR

FIN-BASED LATERAL BIPOLAR JUNCTION TRANSISTOR WITH REDUCED BASE RES...

LATERAL BIPOLAR TRANSISTOR WITH GATED COLLECTOR

NON-SELF-ALIGNED LATERAL BIPOLAR JUNCTION TRANSISTORS

ANNULAR BIPOLAR TRANSISTORS

BIPOLAR JUNCTION TRANSISTORS INCLUDING A STRESS LINER

ASYMMETRIC LATERAL BIPOLAR TRANSISTOR AND METHOD

LATERAL BIPOLAR JUNCTION TRANSISTOR AND METHOD

BIPOLAR JUNCTION TRANSISTOR (BJT) STRUCTURE AND RELATED METHOD