James R. Pfiester

Person

Austin, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having electrically coupled transistors with a...
- Patent number 5,616,948
- Issue date Apr 1, 1997
- Motorola Inc.
- James R. Pfiester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a buried channel transistor
- Patent number 5,536,962
- Issue date Jul 16, 1996
- Motorola, Inc.
- James R. Pfiester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Static-random-access memory cell with channel stops having differin...
- Patent number 5,473,185
- Issue date Dec 5, 1995
- Motorola, Inc.
- James R. Pfiester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory cell and fabrication process
- Patent number 5,459,688
- Issue date Oct 17, 1995
- Motorola Inc.
- James R. Pfiester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin-film transistor having an inlaid thin-film channel region
- Patent number 5,426,315
- Issue date Jun 20, 1995
- Motorola Inc.
- James R. Pfiester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming electrical isolation in an integrated circuit
- Patent number 5,422,300
- Issue date Jun 6, 1995
- Motorola Inc.
- James R. Pfiester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a dual transistor structure
- Patent number 5,413,948
- Issue date May 9, 1995
- Motorola, Inc.
- James R. Pfiester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor device having a shallow dope...
- Patent number 5,407,847
- Issue date Apr 18, 1995
- Motorola Inc.
- James D. Hayden
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a metal silicide interconnect in an integrated c...
- Patent number 5,405,806
- Issue date Apr 11, 1995
- Motorola Inc.
- James R. Pfiester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming a static-random-access memory cell
- Patent number 5,393,689
- Issue date Feb 28, 1995
- Motorola, Inc.
- James R. Pfiester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device having a compact symmetrical layout
- Patent number 5,373,170
- Issue date Dec 13, 1994
- Motorola Inc.
- James R. Pfiester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating paired MOS transistors having a current-gain...
- Patent number 5,371,026
- Issue date Dec 6, 1994
- Motorola Inc.
- James D. Hayden
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming electrical isolation in an integrated circuit de...
- Patent number 5,371,035
- Issue date Dec 6, 1994
- Motorola Inc.
- James R. Pfiester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming dual field oxide isolation
- Patent number 5,369,052
- Issue date Nov 29, 1994
- Motorola, Inc.
- Prashant Kenkare
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating isolation regions in a semiconductor device
- Patent number 5,358,890
- Issue date Oct 25, 1994
- Motorola Inc.
- Richard D. Sivan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a transistor having silicided regions
- Patent number 5,352,631
- Issue date Oct 4, 1994
- Motorola, Inc.
- Arkalgud R. Sitaram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating a semiconductor memory cell having thin-fil...
- Patent number 5,348,903
- Issue date Sep 20, 1994
- Motorola Inc.
- James R. Pfiester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory cell
- Patent number 5,334,861
- Issue date Aug 2, 1994
- Motorola Inc.
- James R. Pfiester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a six transistor static random access memory cell
- Patent number 5,330,929
- Issue date Jul 19, 1994
- Motorola, Inc.
- James R. Pfiester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual-transistor structure and method of formation
- Patent number 5,324,960
- Issue date Jun 28, 1994
- Motorola, Inc.
- James R. Pfiester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having a lightly doped region
- Patent number 5,319,232
- Issue date Jun 7, 1994
- Motorola, Inc.
- James R. Pfiester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an overlapping memory cell
- Patent number 5,291,053
- Issue date Mar 1, 1994
- Motorola, Inc.
- James R. Pfiester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor device having a shallow dope...
- Patent number 5,279,976
- Issue date Jan 18, 1994
- Motorola, Inc.
- James D. Hayden
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS device and process
- Patent number 5,268,590
- Issue date Dec 7, 1993
- Motorola, Inc.
- James R. Pfiester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making an MOS transistor having improved transconductance...
- Patent number 5,264,380
- Issue date Nov 23, 1993
- Motorola, Inc.
- James R. Pfiester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a thin-film transistor and process
- Patent number 5,241,193
- Issue date Aug 31, 1993
- Motorola, Inc.
- James R. Pfiester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming oxide isolation
- Patent number 5,236,862
- Issue date Aug 17, 1993
- Motorola, Inc.
- James R. Pfiester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming isolation regions in a semiconductor device
- Patent number 5,212,110
- Issue date May 18, 1993
- Motorola, Inc.
- James R. Pfiester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making dynamic random access memory cell having a trench...
- Patent number 5,204,281
- Issue date Apr 20, 1993
- Motorola, Inc.
- James R. Pfiester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having a lightly doped region and method of formation
- Patent number 5,200,352
- Issue date Apr 6, 1993
- Motorola Inc.
- James R. Pfiester
- H01 - BASIC ELECTRIC ELEMENTS

James R. Pfiester

Person

Patents Grantslast 30 patents

Semiconductor device having electrically coupled transistors with a...

Semiconductor device having a buried channel transistor

Static-random-access memory cell with channel stops having differin...

Semiconductor memory cell and fabrication process

Thin-film transistor having an inlaid thin-film channel region

Method for forming electrical isolation in an integrated circuit

Method for forming a dual transistor structure

Method for fabricating a semiconductor device having a shallow dope...

Method for forming a metal silicide interconnect in an integrated c...

Process for forming a static-random-access memory cell

Semiconductor memory device having a compact symmetrical layout

Method for fabricating paired MOS transistors having a current-gain...

Method for forming electrical isolation in an integrated circuit de...

Method of forming dual field oxide isolation

Process for fabricating isolation regions in a semiconductor device

Method for forming a transistor having silicided regions

Process for fabricating a semiconductor memory cell having thin-fil...

Semiconductor memory cell

Method of making a six transistor static random access memory cell

Dual-transistor structure and method of formation

Transistor having a lightly doped region

Semiconductor device having an overlapping memory cell

Method for fabricating a semiconductor device having a shallow dope...

CMOS device and process

Method of making an MOS transistor having improved transconductance...

Semiconductor device having a thin-film transistor and process

Method of forming oxide isolation

Method for forming isolation regions in a semiconductor device

Method of making dynamic random access memory cell having a trench...

Transistor having a lightly doped region and method of formation