Jeffrey J. Welser

Person

Greenwich, CT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Capacitor with high charge storage capacity
- Patent number 6,700,145
- Issue date Mar 2, 2004
- International Business Machines Corporation
- Charles T. Black
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical DRAM having metallic node conductor
- Patent number 6,583,462
- Issue date Jun 24, 2003
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-on-insulator (SOI) trench photodiode
- Patent number 6,538,299
- Issue date Mar 25, 2003
- International Business Machines Corporation
- Young H. Kwark
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Structure for folded architecture pillar memory cell
- Patent number 6,440,801
- Issue date Aug 27, 2002
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical DRAM cell with robust gate-to-storage node isolation
- Patent number 6,376,873
- Issue date Apr 23, 2002
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming self-isolated and self-aligned 4F-square vertical...
- Patent number 6,316,309
- Issue date Nov 13, 2001
- Steven John Holmes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dynamic random access memory
- Patent number 6,204,140
- Issue date Mar 20, 2001
- Infineon Technologies North America Corp.
- Ulrike Gruening
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-isolated and self-aligned 4F-square vertical fet-trench dram c...
- Patent number 6,137,128
- Issue date Oct 24, 2000
- International Business Machines Corporation
- Steven John Holmes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure for folded architecture pillar memory cell
- Patent number 6,114,725
- Issue date Sep 5, 2000
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned diffused source vertical transistors with stack capaci...
- Patent number 6,077,745
- Issue date Jun 20, 2000
- International Business Machines Corporation
- Stuart Mcallister Burns
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory transistor with resistively coupled floating gate
- Patent number 6,069,381
- Issue date May 30, 2000
- International Business Machines Corporation
- Charles Thomas Black
- G11 - INFORMATION STORAGE
Information Patent Grant
Self-aligned diffused source vertical transistors with deep trench...
- Patent number 6,034,389
- Issue date Mar 7, 2000
- International Business Machines Corporation
- Stuart Mcallister Burns
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
4F-square memory cell having vertical floating-gate transistors wit...
- Patent number 6,033,957
- Issue date Mar 7, 2000
- International Business Machines Corporation
- Stuart Mcallister Burns
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned diffused source vertical transistors with deep trench...
- Patent number 6,013,548
- Issue date Jan 11, 2000
- International Business Machines Corporation
- Stuart Mcallister Burns
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making three dimensional circuit integration
- Patent number 5,998,292
- Issue date Dec 7, 1999
- International Business Machines Corporation
- Charles Thomas Black
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
2F-square memory cell for gigabit memory applications
- Patent number 5,990,509
- Issue date Nov 23, 1999
- International Business Machines Corporation
- Stuart Mcallister Burns
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned diffused source vertical transistors with stack capaci...
- Patent number 5,929,477
- Issue date Jul 27, 1999
- International Business Machines Corporation
- Stuart McAllister Burns
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon sidewall etching
- Patent number 5,895,273
- Issue date Apr 20, 1999
- International Business Machines Corporation
- Stuart M. Burns
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
4F-square memory cell having vertical floating-gate transistors wit...
- Patent number 5,874,760
- Issue date Feb 23, 1999
- International Business Machines Corporation
- Stuart Mcallister Burns
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wavelength-selective devices using silicon-on-insulator
- Patent number 5,559,912
- Issue date Sep 24, 1996
- International Business Machines Corporation
- Farid Agahi
- G02 - OPTICS

Patents Applicationslast 30 patents

Information Patent Application
METHOD TO PRODUCE TRANSISTOR HAVING REDUCED GATE HEIGHT
- Publication number 20050048732
- Publication date Mar 3, 2005
- International Business Machines Corporation
- Heemyoung Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC MEMORY TRANSISTOR WITH RESISTIVELY COUPLED FLOATING GATE
- Publication number 20010045595
- Publication date Nov 29, 2001
- CHARLES THOMAS BLACK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process of manufacturing a dynamic random access memory device
- Publication number 20010018247
- Publication date Aug 30, 2001
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS

Jeffrey J. Welser

Person

Patents Grantslast 30 patents

Capacitor with high charge storage capacity

Vertical DRAM having metallic node conductor

Silicon-on-insulator (SOI) trench photodiode

Structure for folded architecture pillar memory cell

Vertical DRAM cell with robust gate-to-storage node isolation

Method of forming self-isolated and self-aligned 4F-square vertical...

Dynamic random access memory

Self-isolated and self-aligned 4F-square vertical fet-trench dram c...

Structure for folded architecture pillar memory cell

Self-aligned diffused source vertical transistors with stack capaci...

Ferroelectric memory transistor with resistively coupled floating gate

Self-aligned diffused source vertical transistors with deep trench...

4F-square memory cell having vertical floating-gate transistors wit...

Self-aligned diffused source vertical transistors with deep trench...

Method for making three dimensional circuit integration

2F-square memory cell for gigabit memory applications

Self-aligned diffused source vertical transistors with stack capaci...

Silicon sidewall etching

4F-square memory cell having vertical floating-gate transistors wit...

Wavelength-selective devices using silicon-on-insulator

Patents Applicationslast 30 patents

METHOD TO PRODUCE TRANSISTOR HAVING REDUCED GATE HEIGHT

FERROELECTRIC MEMORY TRANSISTOR WITH RESISTIVELY COUPLED FLOATING GATE

Process of manufacturing a dynamic random access memory device