Jochen C. Beintner

Person

Wappinger's Falls, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Dense chevron finFET and method of manufacturing same
- Patent number 8,963,294
- Issue date Feb 24, 2015
- International Business Machines Corporation
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making double-gated self-aligned finFET having gates of d...
- Patent number 7,785,944
- Issue date Aug 31, 2010
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of implanting using a shadow effect
- Patent number 7,767,562
- Issue date Aug 3, 2010
- Qimonda AG
- Helmut Horst Tews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Raised STI process for multiple gate ox and sidewall protection on...
- Patent number 7,737,502
- Issue date Jun 15, 2010
- International Business Machines Corporation
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device fabrication by anisotropic wet etch
- Patent number 7,696,539
- Issue date Apr 13, 2010
- International Business Machines Corporation
- Yujun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method of making double-gated self-aligned finFET hav...
- Patent number 7,348,641
- Issue date Mar 25, 2008
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dense chevron finFET and method of manufacturing same
- Patent number 7,323,374
- Issue date Jan 29, 2008
- International Business Machines Corporation
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench capacitor with buried strap
- Patent number 7,157,329
- Issue date Jan 2, 2007
- Infineon Technologies Aktiengesellschaft
- Helmut Tews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method of forming a notched gate field effect transistor
- Patent number 7,129,564
- Issue date Oct 31, 2006
- International Business Machines Corporation
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate conductor isolation and method for manufacturing same
- Patent number 7,101,755
- Issue date Sep 5, 2006
- Infineon Technologies AG
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
TEOS assisted oxide CMP process
- Patent number 7,091,103
- Issue date Aug 15, 2006
- International Business Machines Corporation
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual gate FinFet
- Patent number 7,091,566
- Issue date Aug 15, 2006
- International Business Machines Corp.
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Locally thinned fins
- Patent number 7,087,471
- Issue date Aug 8, 2006
- International Business Machines Corporation
- Jochen C. Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of controlled sublithographic structures
- Patent number 7,087,532
- Issue date Aug 8, 2006
- International Business Machines Corporation
- David M Dobuzinsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Raised STI process for multiple gate ox and sidewall protection on...
- Patent number 7,037,794
- Issue date May 2, 2006
- International Business Machines Corporation
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pull-back method of forming fins in FinFets
- Patent number 7,018,551
- Issue date Mar 28, 2006
- International Business Machines Corporation
- Jochen C. Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitrided STI liner oxide for reduced corner device impact on vertic...
- Patent number 6,998,666
- Issue date Feb 14, 2006
- International Business Machines Corporation
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a collar using selective SiGe/Amorphous Si Etch
- Patent number 6,987,042
- Issue date Jan 17, 2006
- International Business Machines Corporation
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for ultra-small grain size polysilicon
- Patent number 6,967,384
- Issue date Nov 22, 2005
- International Business Machines Corporation
- Jochen Beintner
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Nitrogen implantation using a shadow effect to control gate oxide t...
- Patent number 6,967,147
- Issue date Nov 22, 2005
- Infineon Technologies AG
- Helmut Horst Tews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pitcher-shaped active area for field effect transistor and method o...
- Patent number 6,960,514
- Issue date Nov 1, 2005
- International Business Machines Corporation
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned buried strap process using doped HDP oxide
- Patent number 6,946,345
- Issue date Sep 20, 2005
- International Business Machines Corporation
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selfaligned source/drain FinFET process flow
- Patent number 6,933,183
- Issue date Aug 23, 2005
- International Business Machines Corporation
- Jochen C. Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench isolation employing a high aspect ratio trench
- Patent number 6,933,206
- Issue date Aug 23, 2005
- Infineon Technologies AG
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide/nitride stacked in FinFET spacer process
- Patent number 6,924,178
- Issue date Aug 2, 2005
- International Business Machines Corporation
- Jochen C. Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method of forming a notched gate field effect transistor
- Patent number 6,905,976
- Issue date Jun 14, 2005
- International Business Machines Corporation
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process integration for integrated circuits
- Patent number 6,893,911
- Issue date May 17, 2005
- Infineon Technologies Aktiengesellschaft
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench capacitor with buried strap
- Patent number 6,853,025
- Issue date Feb 8, 2005
- Infineon Technologies Aktiengesellschaft
- Helmut Tews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and methods for process integration in vertical DRAM cell...
- Patent number 6,790,739
- Issue date Sep 14, 2004
- International Business Machines Corporation
- Rajeev Malik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon nitride island formation for increased capacitance
- Patent number 6,770,526
- Issue date Aug 3, 2004
- Infineon Technologies North America Corp.
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method of making double-gated self-aligned finFET having gates of d...
- Publication number 20080176365
- Publication date Jul 24, 2008
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DENSE CHEVRON finFET AND METHOD OF MANUFACTURING SAME
- Publication number 20080006852
- Publication date Jan 10, 2008
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and method of making double-gated self-aligned finfet hav...
- Publication number 20070181930
- Publication date Aug 9, 2007
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Device fabrication by anisotropic wet etch
- Publication number 20070166900
- Publication date Jul 19, 2007
- International Business Machines Corporation
- Yujun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DENSE CHEVRON finFET AND METHOD OF MANUFACTURING SAME
- Publication number 20070063276
- Publication date Mar 22, 2007
- International Business Machines Corporation
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and method of forming a notched gate field effect transistor
- Publication number 20060157805
- Publication date Jul 20, 2006
- Infineon Technologies AG
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Raised sti process for multiple gate ox and sidewall protection on...
- Publication number 20060128111
- Publication date Jun 15, 2006
- International Business Machines Corporation
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Formation of Controlled Sublithographic Structures
- Publication number 20060068596
- Publication date Mar 30, 2006
- International Business Machines Corporation
- David M. Dobuzinsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate conductor isolation and method for manufacturing same
- Publication number 20060030106
- Publication date Feb 9, 2006
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of implanting using a shadow effect
- Publication number 20060024930
- Publication date Feb 2, 2006
- Helmut Horst Tews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RAISED STI PROCESS FOR MULTIPLE GATE OX AND SIDEWALL PROTECTION ON...
- Publication number 20050277271
- Publication date Dec 15, 2005
- International Business Machines Corporation
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench capacitor with buried strap
- Publication number 20050158961
- Publication date Jul 21, 2005
- Helmut Tews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and method of forming a notched gate field effect transistor
- Publication number 20050158927
- Publication date Jul 21, 2005
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDED STI LINER OXIDE FOR REDUCED CORNER DEVICE IMPACT ON VERTIC...
- Publication number 20050151181
- Publication date Jul 14, 2005
- International Business Machines Corporation
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and method for ultra-small grain size polysilicon
- Publication number 20050130364
- Publication date Jun 16, 2005
- International Business Machines Corporation
- Jochen Beintner
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
OXIDE/NITRIDE STACKED IN FINFET SPACER PROCESS
- Publication number 20050124101
- Publication date Jun 9, 2005
- International Business Machines Corporation
- Jochen C. Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELFALIGNED SOURCE/DRAIN FINFET PROCESS FLOW
- Publication number 20050124099
- Publication date Jun 9, 2005
- International Business Machines Corporation
- Jochen C. Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Pull-back method of forming fins in FinFETs
- Publication number 20050121412
- Publication date Jun 9, 2005
- International Business Machines Corporation
- Jochen C. Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual gate finfet
- Publication number 20050110085
- Publication date May 26, 2005
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench isolation employing a high aspect ratio trench
- Publication number 20050079730
- Publication date Apr 14, 2005
- Infineon Technologies North America Corp.
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A COLLAR USING SELECTIVE SiGe/AMORPHOUS Si ETCH
- Publication number 20040241939
- Publication date Dec 2, 2004
- International Business Machines Corporation
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD OF FORMING A NOTCHED GATE FIELD EFFECT TRANSISTOR
- Publication number 20040222498
- Publication date Nov 11, 2004
- International Business Machines Corporation
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-aligned buried strap process using doped HDP oxide
- Publication number 20040188740
- Publication date Sep 30, 2004
- International Business Machines Corp.
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS INTEGRATION FOR INTEGRATED CIRCUITS
- Publication number 20040180547
- Publication date Sep 16, 2004
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Pitcher-shaped active area for field effect transistor and method o...
- Publication number 20040173858
- Publication date Sep 9, 2004
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench capacitor with buried strap
- Publication number 20040164313
- Publication date Aug 26, 2004
- Helmut Tews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEOS assisted oxide CMP process
- Publication number 20040110380
- Publication date Jun 10, 2004
- International Business Machines Corporation
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon nitride island formation for increased capacitance
- Publication number 20040095896
- Publication date May 20, 2004
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHODS FOR PROCESS INTEGRATION IN VERTICAL DRAM CELL...
- Publication number 20030186502
- Publication date Oct 2, 2003
- International Business Machines Corporation
- Rajeev Malik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated spacer for gate/source/drain isolation in a vertical arr...
- Publication number 20030062568
- Publication date Apr 3, 2003
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS

Jochen C. Beintner

Person

Patents Grantslast 30 patents

Dense chevron finFET and method of manufacturing same

Method of making double-gated self-aligned finFET having gates of d...

Method of implanting using a shadow effect

Raised STI process for multiple gate ox and sidewall protection on...

Device fabrication by anisotropic wet etch

Structure and method of making double-gated self-aligned finFET hav...

Dense chevron finFET and method of manufacturing same

Trench capacitor with buried strap

Structure and method of forming a notched gate field effect transistor

Gate conductor isolation and method for manufacturing same

TEOS assisted oxide CMP process

Dual gate FinFet

Locally thinned fins

Formation of controlled sublithographic structures

Raised STI process for multiple gate ox and sidewall protection on...

Pull-back method of forming fins in FinFets

Nitrided STI liner oxide for reduced corner device impact on vertic...

Method of forming a collar using selective SiGe/Amorphous Si Etch

Structure and method for ultra-small grain size polysilicon

Nitrogen implantation using a shadow effect to control gate oxide t...

Pitcher-shaped active area for field effect transistor and method o...

Self-aligned buried strap process using doped HDP oxide

Selfaligned source/drain FinFET process flow

Trench isolation employing a high aspect ratio trench

Oxide/nitride stacked in FinFET spacer process

Structure and method of forming a notched gate field effect transistor

Process integration for integrated circuits

Trench capacitor with buried strap

Structure and methods for process integration in vertical DRAM cell...

Silicon nitride island formation for increased capacitance

Patents Applicationslast 30 patents

Method of making double-gated self-aligned finFET having gates of d...

DENSE CHEVRON finFET AND METHOD OF MANUFACTURING SAME

Structure and method of making double-gated self-aligned finfet hav...

Device fabrication by anisotropic wet etch

DENSE CHEVRON finFET AND METHOD OF MANUFACTURING SAME

Structure and method of forming a notched gate field effect transistor

Raised sti process for multiple gate ox and sidewall protection on...

Formation of Controlled Sublithographic Structures

Gate conductor isolation and method for manufacturing same

Method of implanting using a shadow effect

RAISED STI PROCESS FOR MULTIPLE GATE OX AND SIDEWALL PROTECTION ON...

Trench capacitor with buried strap

Structure and method of forming a notched gate field effect transistor

NITRIDED STI LINER OXIDE FOR REDUCED CORNER DEVICE IMPACT ON VERTIC...

Structure and method for ultra-small grain size polysilicon

OXIDE/NITRIDE STACKED IN FINFET SPACER PROCESS

SELFALIGNED SOURCE/DRAIN FINFET PROCESS FLOW

Pull-back method of forming fins in FinFETs

Dual gate finfet

Trench isolation employing a high aspect ratio trench

METHOD OF FORMING A COLLAR USING SELECTIVE SiGe/AMORPHOUS Si ETCH

STRUCTURE AND METHOD OF FORMING A NOTCHED GATE FIELD EFFECT TRANSISTOR

Self-aligned buried strap process using doped HDP oxide

PROCESS INTEGRATION FOR INTEGRATED CIRCUITS

Pitcher-shaped active area for field effect transistor and method o...

Trench capacitor with buried strap

TEOS assisted oxide CMP process

Silicon nitride island formation for increased capacitance

STRUCTURE AND METHODS FOR PROCESS INTEGRATION IN VERTICAL DRAM CELL...

Integrated spacer for gate/source/drain isolation in a vertical arr...