Johannes Maria Cornelis Stork

Person

Yorktown Heights, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of making graded channel effect transistor
- Patent number 6,004,137
- Issue date Dec 21, 1999
- International Business Machines Corporation
- Emmanuel Crabbe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graded channel field effect transistor
- Patent number 5,821,577
- Issue date Oct 13, 1998
- International Business Machines Corporation
- Emmanuel Crabbe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graded channel field effect transistor
- Patent number 5,777,364
- Issue date Jul 7, 1998
- International Business Machines Corporation
- Emmanuel Crabbe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graded bandgap single-crystal emitter heterojunction bipolar transi...
- Patent number 5,352,912
- Issue date Oct 4, 1994
- International Business Machines Corporation
- Emmanuel F. Crabbe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating self-aligned epitaxial base transistor
- Patent number 5,340,753
- Issue date Aug 23, 1994
- International Business Machines Corp.
- Ernest Bassous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with self-aligned contact to buried subcollector
- Patent number 5,119,157
- Issue date Jun 2, 1992
- International Business Machines Corporation
- David L. Harame
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with ultra-thin epitaxial base and method of fab...
- Patent number 5,101,256
- Issue date Mar 31, 1992
- International Business Machines Corporation
- David L. Harame
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a bipolar transistor with ultra-thin epitaxia...
- Patent number 5,024,957
- Issue date Jun 18, 1991
- International Business Machines Corporation
- David L. Harame
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary transistor structure and method for manufacture
- Patent number 4,951,115
- Issue date Aug 21, 1990
- International Business Machines Corp.
- David L. Harame
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor structure with self-aligned device and isolation...
- Patent number 4,738,624
- Issue date Apr 19, 1988
- International Business Machines Corporation
- Subramanian S. Iyer
- H01 - BASIC ELECTRIC ELEMENTS

Johannes Maria Cornelis Stork

Person

Patents Grantslast 30 patents

Method of making graded channel effect transistor

Graded channel field effect transistor

Graded channel field effect transistor

Graded bandgap single-crystal emitter heterojunction bipolar transi...

Method for fabricating self-aligned epitaxial base transistor

Semiconductor device with self-aligned contact to buried subcollector

Bipolar transistor with ultra-thin epitaxial base and method of fab...

Method of fabricating a bipolar transistor with ultra-thin epitaxia...

Complementary transistor structure and method for manufacture

Bipolar transistor structure with self-aligned device and isolation...