John Chaffee

Person

Colorado Springs, CO, US

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated circuit structures containing a strain-compensated compo...
- Patent number 9,012,308
- Issue date Apr 21, 2015
- Atmel Corporation
- Darwin Gene Enicks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structures containing a strain-compensated compo...
- Patent number 8,530,934
- Issue date Sep 10, 2013
- Atmel Corporation
- Darwin G. Enicks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radiation hardened semiconductor device
- Patent number 6,855,618
- Issue date Feb 15, 2005
- Aeroflex Colorado Springs, Inc.
- Richard L. Woodruff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radiation hardened semiconductor device
- Patent number 6,511,893
- Issue date Jan 28, 2003
- Aeroflex UTMC Microelectronics, Inc.
- Richard L. Woodruff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making recessed field oxide for radiation hardened micro...
- Patent number 6,063,690
- Issue date May 16, 2000
- UTMC Microelectronics Systems Inc.
- Richard L. Woodruff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layered field oxide structure
- Patent number 5,037,781
- Issue date Aug 6, 1991
- United Technologies Corporation
- Richard L. Woodruff
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Integrated Circuit Structures Containing a Strain- Compensated Comp...
- Publication number 20140001603
- Publication date Jan 2, 2014
- ATMEL CORPORATION
- Darwin Gene Enicks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES CONTAINING A STRAIN-COMPENSATED COMPO...
- Publication number 20110073907
- Publication date Mar 31, 2011
- ATMEL CORPORATION
- Darwin G. Enicks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GETTERING LAYER ON SUBSTRATE
- Publication number 20090189159
- Publication date Jul 30, 2009
- ATMEL CORPORATION
- Darwin Enicks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Oxygen enhanced metastable silicon germanium film layer
- Publication number 20070148890
- Publication date Jun 28, 2007
- Darwin G. Enicks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and system for providing a heterojunction bipolar transistor...
- Publication number 20070102729
- Publication date May 10, 2007
- Darwin Gene Enicks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strain-compensated metastable compound base heterojunction bipolar...
- Publication number 20070102834
- Publication date May 10, 2007
- Darwin G. Enicks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Radiation hardened semiconductor device
- Publication number 20040166648
- Publication date Aug 26, 2004
- Richard L. Woodruff
- H01 - BASIC ELECTRIC ELEMENTS

John Chaffee

Person

Patents Grantslast 30 patents

Integrated circuit structures containing a strain-compensated compo...

Integrated circuit structures containing a strain-compensated compo...

Radiation hardened semiconductor device

Radiation hardened semiconductor device

Method for making recessed field oxide for radiation hardened micro...

Multi-layered field oxide structure

Patents Applicationslast 30 patents

Integrated Circuit Structures Containing a Strain- Compensated Comp...

INTEGRATED CIRCUIT STRUCTURES CONTAINING A STRAIN-COMPENSATED COMPO...

GETTERING LAYER ON SUBSTRATE

Oxygen enhanced metastable silicon germanium film layer

Method and system for providing a heterojunction bipolar transistor...

Strain-compensated metastable compound base heterojunction bipolar...

Radiation hardened semiconductor device