John J. Pekarik

Person

Underhill, VT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Heterojunction bipolar transistors with terminals having a non-plan...
- Patent number 12,211,929
- Issue date Jan 28, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Alexander Derrickson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with wrap-around extrinsic base
- Patent number 12,142,673
- Issue date Nov 12, 2024
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistors
- Patent number 12,107,124
- Issue date Oct 1, 2024
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor structure with superlattice layer and me...
- Patent number 11,862,717
- Issue date Jan 2, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with wrap-around extrinsic base
- Patent number 11,855,195
- Issue date Dec 26, 2023
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with wrap-around extrinsic base
- Patent number 11,855,196
- Issue date Dec 26, 2023
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor with emitter base junction oxide...
- Patent number 11,848,192
- Issue date Dec 19, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor with buried trap rich isolation r...
- Patent number 11,791,334
- Issue date Oct 17, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor structure with base over semiconductor b...
- Patent number 11,784,224
- Issue date Oct 10, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor structure with collector on polycrystalline isol...
- Patent number 11,749,747
- Issue date Sep 5, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual thickness fuse structures
- Patent number 11,749,599
- Issue date Sep 5, 2023
- GLOBALFOUNDRIES Inc.
- John J. Pekarik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistors with a wraparound base layer
- Patent number 11,695,064
- Issue date Jul 4, 2023
- GLOBALFOUNDRIES U.S. INC.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double mesa heterojunction bipolar transistor
- Patent number 11,646,348
- Issue date May 9, 2023
- GLOBALFOUNDRIES U.S. Inc.
- John J. Pekarik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device including optofluidic sensor with integrated photodiode
- Patent number 11,639,895
- Issue date May 2, 2023
- GLOBALFOUNDRIES U.S. INC.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermally and electrically conductive interconnects
- Patent number 11,637,068
- Issue date Apr 25, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistors with polysilicon terminals
- Patent number 11,637,181
- Issue date Apr 25, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photodetectors with a lateral composition gradient
- Patent number 11,569,405
- Issue date Jan 31, 2023
- GLOBALFOUNDRIES U.S. INC.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-free fuse structures
- Patent number 11,469,178
- Issue date Oct 11, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Virtual bulk in semiconductor on insulator technology
- Patent number 11,374,092
- Issue date Jun 28, 2022
- GLOBALFOUNDRIES U.S. Inc.
- John J. Pekarik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Boolean temperature sensing using phase transition material
- Patent number 11,333,558
- Issue date May 17, 2022
- GLOBALFOUNDRIES U.S. INC.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors with back gate contact and buried high res...
- Patent number 11,296,190
- Issue date Apr 5, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-based photodiodes
- Patent number 11,282,883
- Issue date Mar 22, 2022
- GLOBALFOUNDRIES U.S. INC.
- John J. Ellis-Monaghan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trap-rich layer in a high-resistivity semiconductor layer
- Patent number 11,271,077
- Issue date Mar 8, 2022
- GLOBALFOUNDRIES U.S. INC.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer with crystalline silicon and trap rich polysilicon layer
- Patent number 11,271,079
- Issue date Mar 8, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor devices with source/drain regions comprising an interfac...
- Patent number 11,264,499
- Issue date Mar 1, 2022
- GLOBALFOUNDRIES U.S. INC.
- John J. Pekarik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor with marker layer
- Patent number 11,217,685
- Issue date Jan 4, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Herbert Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistors
- Patent number 11,195,925
- Issue date Dec 7, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor
- Patent number 11,177,347
- Issue date Nov 16, 2021
- GLOBALFOUNDRIES U.S. INC.
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double mesa heterojunction bipolar transistor
- Patent number 11,171,210
- Issue date Nov 9, 2021
- GLOBALPOUNDRIES U.S. INC.
- John J. Pekarik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with lattice structure
- Patent number 11,158,722
- Issue date Oct 26, 2021
- GLOBALFOUNDRIES U.S. INC.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRANSISTOR WITH WRAP-AROUND EXTRINSIC BASE
- Publication number 20250006824
- Publication date Jan 2, 2025
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTORS
- Publication number 20240395869
- Publication date Nov 28, 2024
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xinshu CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW CAPACITANCE AND LOW RESISTANCE DEVICES
- Publication number 20240339527
- Publication date Oct 10, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Judson R. HOLT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION FIELD-EFFECT TRANSISTORS
- Publication number 20240234498
- Publication date Jul 11, 2024
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xinshu CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTORS WITH A CUT STRESS LINER
- Publication number 20240170561
- Publication date May 23, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTOR ARRAYS
- Publication number 20240170560
- Publication date May 23, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Alexander Derrickson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ARRAY ARRANGEMENTS OF VERTICAL BIPOLAR JUNCTION TRANSISTORS
- Publication number 20240172455
- Publication date May 23, 2024
- GLOBALFOUNDRIES U.S. Inc.
- John J. Pekarik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED STRUCTURE WITH TRAP RICH REGIONS AND LOW RESISTIVITY REG...
- Publication number 20240162232
- Publication date May 16, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION FIELD-EFFECT TRANSISTORS
- Publication number 20240136395
- Publication date Apr 25, 2024
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xinshu CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES FOR A VERTICAL VARACTOR DIODE AND RELATED METHODS
- Publication number 20240072180
- Publication date Feb 29, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Saloni Chaurasia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH WRAP-AROUND EXTRINSIC BASE
- Publication number 20240006517
- Publication date Jan 4, 2024
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR WITH BURIED TRAP RICH ISOLATION R...
- Publication number 20230402453
- Publication date Dec 14, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR STRUCTURE WITH COLLECTOR ON POLYCRYSTALLINE ISOL...
- Publication number 20230223463
- Publication date Jul 13, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTORS
- Publication number 20230197787
- Publication date Jun 22, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xinshu CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTORS
- Publication number 20230178638
- Publication date Jun 8, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xinshu CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH WRAP-AROUND EXTRINSIC BASE
- Publication number 20230129914
- Publication date Apr 27, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH WRAP-AROUND EXTRINSIC BASE
- Publication number 20230127768
- Publication date Apr 27, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR TRANSISTOR STRUCTURE WITH BASE OVER SEMICONDUCTOR B...
- Publication number 20230061482
- Publication date Mar 2, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR TRANSISTOR STRUCTURE WITH SUPERLATTICE LAYER AND ME...
- Publication number 20230064512
- Publication date Mar 2, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR TRANSISTORS WITH POLYSILICON TERMINALS
- Publication number 20230057695
- Publication date Feb 23, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE INCLUDING OPTOFLUIDIC SENSOR WITH INTEGRATED PHOTODIODE
- Publication number 20220291126
- Publication date Sep 15, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTORS WITH A WRAPAROUND BASE LAYER
- Publication number 20220262930
- Publication date Aug 18, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-FREE FUSE STRUCTURES
- Publication number 20220199525
- Publication date Jun 23, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. STAMPER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THERMALLY AND ELECTRICALLY CONDUCTIVE INTERCONNECTS
- Publication number 20220189877
- Publication date Jun 16, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. STAMPER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR WITH BURIED TRAP RICH ISOLATION R...
- Publication number 20220122968
- Publication date Apr 21, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE COMPRISING AN OPTOFLUIDIC SENSOR WITH INTEGRATED PHOTODIODE
- Publication number 20220062896
- Publication date Mar 3, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Steven M. Shank
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Application
DOUBLE MESA HETEROJUNCTION BIPOLAR TRANSISTOR
- Publication number 20210408238
- Publication date Dec 30, 2021
- GLOBALFOUNDRIES U.S. Inc.
- John J. PEKARIK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRAP-RICH LAYER IN A HIGH-RESISTIVITY SEMICONDUCTOR LAYER
- Publication number 20210280672
- Publication date Sep 9, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER WITH CRYSTALLINE SILICON AND TRAP RICH POLYSILICON LAYER
- Publication number 20210217850
- Publication date Jul 15, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. STAMPER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS WITH BACK GATE CONTACT AND BURIED HIGH RES...
- Publication number 20210217849
- Publication date Jul 15, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS

John J. Pekarik

Person

Patents Grantslast 30 patents

Heterojunction bipolar transistors with terminals having a non-plan...

Transistor with wrap-around extrinsic base

Bipolar transistors

Lateral bipolar transistor structure with superlattice layer and me...

Transistor with wrap-around extrinsic base

Transistor with wrap-around extrinsic base

Heterojunction bipolar transistor with emitter base junction oxide...

Heterojunction bipolar transistor with buried trap rich isolation r...

Lateral bipolar transistor structure with base over semiconductor b...

Bipolar transistor structure with collector on polycrystalline isol...

Dual thickness fuse structures

Bipolar junction transistors with a wraparound base layer

Double mesa heterojunction bipolar transistor

Device including optofluidic sensor with integrated photodiode

Thermally and electrically conductive interconnects

Lateral bipolar transistors with polysilicon terminals

Photodetectors with a lateral composition gradient

Metal-free fuse structures

Virtual bulk in semiconductor on insulator technology

Boolean temperature sensing using phase transition material

Field effect transistors with back gate contact and buried high res...

Trench-based photodiodes

Trap-rich layer in a high-resistivity semiconductor layer

Wafer with crystalline silicon and trap rich polysilicon layer

Transistor devices with source/drain regions comprising an interfac...

Heterojunction bipolar transistor with marker layer

Heterojunction bipolar transistors

Heterojunction bipolar transistor

Double mesa heterojunction bipolar transistor

Transistors with lattice structure

Patents Applicationslast 30 patents

TRANSISTOR WITH WRAP-AROUND EXTRINSIC BASE

BIPOLAR TRANSISTORS

LOW CAPACITANCE AND LOW RESISTANCE DEVICES

JUNCTION FIELD-EFFECT TRANSISTORS

HETEROJUNCTION BIPOLAR TRANSISTORS WITH A CUT STRESS LINER

BIPOLAR JUNCTION TRANSISTOR ARRAYS

ARRAY ARRANGEMENTS OF VERTICAL BIPOLAR JUNCTION TRANSISTORS

INTEGRATED STRUCTURE WITH TRAP RICH REGIONS AND LOW RESISTIVITY REG...

JUNCTION FIELD-EFFECT TRANSISTORS

STRUCTURES FOR A VERTICAL VARACTOR DIODE AND RELATED METHODS

TRANSISTOR WITH WRAP-AROUND EXTRINSIC BASE

HETEROJUNCTION BIPOLAR TRANSISTOR WITH BURIED TRAP RICH ISOLATION R...

BIPOLAR TRANSISTOR STRUCTURE WITH COLLECTOR ON POLYCRYSTALLINE ISOL...

BIPOLAR TRANSISTORS

BIPOLAR TRANSISTORS

TRANSISTOR WITH WRAP-AROUND EXTRINSIC BASE

TRANSISTOR WITH WRAP-AROUND EXTRINSIC BASE

LATERAL BIPOLAR TRANSISTOR STRUCTURE WITH BASE OVER SEMICONDUCTOR B...

LATERAL BIPOLAR TRANSISTOR STRUCTURE WITH SUPERLATTICE LAYER AND ME...

LATERAL BIPOLAR TRANSISTORS WITH POLYSILICON TERMINALS

DEVICE INCLUDING OPTOFLUIDIC SENSOR WITH INTEGRATED PHOTODIODE

BIPOLAR JUNCTION TRANSISTORS WITH A WRAPAROUND BASE LAYER

METAL-FREE FUSE STRUCTURES

THERMALLY AND ELECTRICALLY CONDUCTIVE INTERCONNECTS

HETEROJUNCTION BIPOLAR TRANSISTOR WITH BURIED TRAP RICH ISOLATION R...

DEVICE COMPRISING AN OPTOFLUIDIC SENSOR WITH INTEGRATED PHOTODIODE

DOUBLE MESA HETEROJUNCTION BIPOLAR TRANSISTOR

TRAP-RICH LAYER IN A HIGH-RESISTIVITY SEMICONDUCTOR LAYER

WAFER WITH CRYSTALLINE SILICON AND TRAP RICH POLYSILICON LAYER

FIELD EFFECT TRANSISTORS WITH BACK GATE CONTACT AND BURIED HIGH RES...