John L. Cain

Person

Taylor, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Optimization of dry etching through the control of helium backside...
- Patent number 5,624,582
- Issue date Apr 29, 1997
- VLSI Technology, Inc.
- John L. Cain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Densification in an intermetal dielectric film
- Patent number 5,610,105
- Issue date Mar 11, 1997
- VLSI Technology, Inc.
- Landon B. Vines
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of processing a semiconductor wafer
- Patent number 5,503,881
- Issue date Apr 2, 1996
- VLSI Technology, Inc.
- John L. Cain
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Plasma processing apparatus
- Patent number 5,439,524
- Issue date Aug 8, 1995
- VLSI Technology, Inc.
- John L. Cain
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Pumping system for evacuating reactor chambers
- Patent number 5,433,238
- Issue date Jul 18, 1995
- VLSI Technology, Inc.
- Stephen Cannizzaro
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Selective dry-etching of bi-layer passivation films
- Patent number 5,433,823
- Issue date Jul 18, 1995
- John L. Cain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of using corrosion prohibiters in aluminum alloy films
- Patent number 5,434,104
- Issue date Jul 18, 1995
- VLSI Technology, Inc.
- John L. Cain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of polycide residues through helium backside pressure con...
- Patent number 5,342,476
- Issue date Aug 30, 1994
- VLSI Technology, Inc.
- John L. Cain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
New dry etch technique
- Patent number 5,336,366
- Issue date Aug 9, 1994
- VLSI Technology, Inc.
- John L. Cain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Molybdenum boride barrier layers between aluminum and silicon at co...
- Patent number 5,329,161
- Issue date Jul 12, 1994
- VLSI Technology, Inc.
- Landon Vines
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated-circuit processing with progressive intermetal-dielectri...
- Patent number 5,286,518
- Issue date Feb 15, 1994
- VLSI Technology, Inc.
- John Cain
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Dual mode plasma etching system and method of plasma endpoint detec...
- Patent number 5,242,532
- Issue date Sep 7, 1993
- VLSI Technology, Inc.
- John L. Cain
- H01 - BASIC ELECTRIC ELEMENTS

John L. Cain

Person

Patents Grantslast 30 patents

Optimization of dry etching through the control of helium backside...

Densification in an intermetal dielectric film

Method of processing a semiconductor wafer

Plasma processing apparatus

Pumping system for evacuating reactor chambers

Selective dry-etching of bi-layer passivation films

Method of using corrosion prohibiters in aluminum alloy films

Reduction of polycide residues through helium backside pressure con...

New dry etch technique

Molybdenum boride barrier layers between aluminum and silicon at co...

Integrated-circuit processing with progressive intermetal-dielectri...

Dual mode plasma etching system and method of plasma endpoint detec...