John P. Snyder

Person

Edina, MN, US

People

Patents Grantslast 30 patents

Information Patent Grant
Vacuum-capacitor method and apparatus
- Patent number 11,600,452
- Issue date Mar 7, 2023
- GranBlueTech, L.L.C.
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vacuum-capacitor apparatus and method
- Patent number 10,991,518
- Issue date Apr 27, 2021
- GranBlueTech, L.L.C.
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and associated capacitors having engineered electrodes with...
- Patent number 10,741,334
- Issue date Aug 11, 2020
- GranBlueTech, L.L.C.
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitors having engineered electrodes with very high energy densi...
- Patent number 10,460,880
- Issue date Oct 29, 2019
- GranBlueTech, L.L.C.
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitors having engineered electrodes with very high energy density
- Patent number 9,911,542
- Issue date Mar 6, 2018
- GranBlueTech, L.L.C.
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for capacitors having engineered electrodes wi...
- Patent number 9,418,795
- Issue date Aug 16, 2016
- GranBlueTech, L.L.C.
- John P. Snyder
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Apparatus and method for capacitors having engineered electrodes wi...
- Patent number 8,760,846
- Issue date Jun 24, 2014
- GranBlueTech, L.L.C.
- John P. Snyder
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Schottky barrier CMOS device and method
- Patent number 8,154,025
- Issue date Apr 10, 2012
- Avolare 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a CMOS device with zero soft error rate
- Patent number 8,084,342
- Issue date Dec 27, 2011
- Avolare 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dynamic Schottky barrier MOSFET device and method of manufacture
- Patent number 8,058,167
- Issue date Nov 15, 2011
- Avolare 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon thin film transistors, systems, and methods of making same
- Patent number 8,039,838
- Issue date Oct 18, 2011
- Soligie, Inc.
- John M. Heitzinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal source and drain transistor having high dielectric constant g...
- Patent number 8,022,459
- Issue date Sep 20, 2011
- Avolare 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon thin film transistors, systems, and methods of making same
- Patent number 7,977,173
- Issue date Jul 12, 2011
- Soligie, Inc.
- John M. Heitzinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having source and/or drain forming schottky...
- Patent number 7,939,902
- Issue date May 10, 2011
- Avolare 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS device with zero soft error rate
- Patent number 7,821,075
- Issue date Oct 26, 2010
- Avolare 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having high dielectric constant gate insulating layer an...
- Patent number 7,674,680
- Issue date Mar 9, 2010
- Avolare 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having source and/or drain forming Schottky...
- Patent number 7,294,898
- Issue date Nov 13, 2007
- Spinnaker Semiconductor, Inc.
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky-barrier mosfet manufacturing method using isotropic etch p...
- Patent number 7,291,524
- Issue date Nov 6, 2007
- Spinnaker Semiconductor, Inc.
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Short-channel Schottky-barrier MOSFET device and manufacturing method
- Patent number 7,221,019
- Issue date May 22, 2007
- Spinnaker Semiconductor, Inc.
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Short-channel Schottky-barrier MOSFET device and manufacturing method
- Patent number 7,052,945
- Issue date May 30, 2006
- Spinnaker Semiconductor, Inc.
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky barrier CMOS fabrication method
- Patent number 6,974,737
- Issue date Dec 13, 2005
- Spinnaker Semiconductor, Inc.
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having high dielectric constant gate insulating layer an...
- Patent number 6,949,787
- Issue date Sep 27, 2005
- Spinnaker Semiconductor, Inc.
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having source and/or drain forming Schottky...
- Patent number 6,784,035
- Issue date Aug 31, 2004
- Spinnaker Semiconductor, Inc.
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Short-channel schottky-barrier MOSFET device and manufacturing method
- Patent number 6,744,103
- Issue date Jun 1, 2004
- Spinnaker Semiconductor, Inc.
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Short-channel schottky-barrier MOSFET device
- Patent number 6,495,882
- Issue date Dec 17, 2002
- Spinnaker Semiconductor, Inc.
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a short-channel FET with Schottky-barrier s...
- Patent number 6,303,479
- Issue date Oct 16, 2001
- Spinnaker Semiconductor, Inc.
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VACUUM-CAPACITOR METHOD AND APPARATUS
- Publication number 20210249197
- Publication date Aug 12, 2021
- GranBlueTech, L.L.C.
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VACUUM-CAPACITOR APPARATUS AND METHOD
- Publication number 20200373093
- Publication date Nov 26, 2020
- GranBlueTech, L.L.C.
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND ASSOCIATED CAPACITORS HAVING ENGINEERED ELECTRODES WITH...
- Publication number 20200090878
- Publication date Mar 19, 2020
- GranBlueTech, L.L.C.
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITORS HAVING ENGINEERED ELECTRODES WITH VERY HIGH ENERGY DENSI...
- Publication number 20180197689
- Publication date Jul 12, 2018
- GranBlueTech, L.L.C.
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITORS HAVING ENGINEERED ELECTRODES WITH VERY HIGH ENERGY DENSITY
- Publication number 20170110258
- Publication date Apr 20, 2017
- GranBlueTech, L.L.C.
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR CAPACITORS HAVING ENGINEERED ELECTRODES WI...
- Publication number 20140301021
- Publication date Oct 9, 2014
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Charger
- Publication number 20120187901
- Publication date Jul 26, 2012
- John Snyder
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
POWER TRANSISTOR WITH METAL SOURCE AND METHOD OF MANUFACTURE
- Publication number 20120126311
- Publication date May 24, 2012
- AVOLARE 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DYNAMIC SCHOTTKY BARRIER MOSFET DEVICE AND METHOD OF MANUFACTURE
- Publication number 20120056250
- Publication date Mar 8, 2012
- AVOLARE 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHORT-CHANNEL SCHOTTKY-BARRIER MOSFET DEVICE AND METHOD OF MANUFACTURE
- Publication number 20110175160
- Publication date Jul 21, 2011
- AVOLARE 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A CMOS DEVICE WITH ZERO SOFT ERROR RATE
- Publication number 20110034016
- Publication date Feb 10, 2011
- AVOLARE 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL SOURCE AND DRAIN TRANSISTOR HAVING HIGH DIELECTRIC CONSTANT G...
- Publication number 20100213556
- Publication date Aug 26, 2010
- AVOLARE 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER TRANSISTOR WITH METAL SOURCE AND METHOD OF MANUFACTURE
- Publication number 20100059819
- Publication date Mar 11, 2010
- SPINNAKER SEMICONDUCTOR, INC.
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHORT-CHANNEL SCHOTTKY-BARRIER MOSFET DEVICE AND MANUFACTURING METHOD
- Publication number 20100032771
- Publication date Feb 11, 2010
- AVOLARE 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY BARRIER INTEGRATED CIRCUIT
- Publication number 20100025774
- Publication date Feb 4, 2010
- AVOLARE 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DYNAMIC SCHOTTKY BARRIER MOSFET DEVICE AND METHOD OF MANUFACTURE
- Publication number 20100015802
- Publication date Jan 21, 2010
- AVOLARE 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR HAVING SOURCE AND/OR DRAIN FORMING SCHOTTKY...
- Publication number 20100013014
- Publication date Jan 21, 2010
- AVOLARE 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL SOURCE/DRAIN SCHOTTKY BARRIER SILICON-ON-NOTHING MOSFET DEVICE
- Publication number 20100013015
- Publication date Jan 21, 2010
- AVOLARE 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY BARRIER CMOS DEVICE AND METHOD
- Publication number 20100006949
- Publication date Jan 14, 2010
- AVOLARE 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON THIN FILM TRANSISTORS, SYSTEMS, AND METHODS OF MAKING SAME
- Publication number 20090191670
- Publication date Jul 30, 2009
- John M. Heitzinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON THIN FILM TRANSISTORS, SYSTEMS, AND METHODS OF MAKING SAME
- Publication number 20090189204
- Publication date Jul 30, 2009
- John M. Heitzinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor having source and/or drain forming Schottky...
- Publication number 20080079107
- Publication date Apr 3, 2008
- Spinnaker Semiconductor, Inc.
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal source/drain Schottky barrier silicon-on-nothing MOSFET devic...
- Publication number 20070194353
- Publication date Aug 23, 2007
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal Source Power Transistor And Method Of Manufacture
- Publication number 20070187756
- Publication date Aug 16, 2007
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS device with zero soft error rate
- Publication number 20070080406
- Publication date Apr 12, 2007
- Spinnaker Semiconductor, Inc.
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dynamic Schottky barrier MOSFET device and method of manufacture
- Publication number 20070026590
- Publication date Feb 1, 2007
- Spinnaker Semiconductor, Inc.
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor having high dielectric constant gate insulating layer an...
- Publication number 20070007605
- Publication date Jan 11, 2007
- Spinnaker Semiconductor, Inc.
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Short-channel schottky-barrier MOSFET device and manufacturing method
- Publication number 20060244052
- Publication date Nov 2, 2006
- Spinnaker Semiconductor, Inc.
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Schottky barrier MOSFET device and circuit
- Publication number 20060237752
- Publication date Oct 26, 2006
- John M. Larson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor having high dielectric constant gate insulating layer an...
- Publication number 20060079059
- Publication date Apr 13, 2006
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS

John P. Snyder

Person

Patents Grantslast 30 patents

Vacuum-capacitor method and apparatus

Vacuum-capacitor apparatus and method

Method and associated capacitors having engineered electrodes with...

Capacitors having engineered electrodes with very high energy densi...

Capacitors having engineered electrodes with very high energy density

Method and apparatus for capacitors having engineered electrodes wi...

Apparatus and method for capacitors having engineered electrodes wi...

Schottky barrier CMOS device and method

Method of manufacturing a CMOS device with zero soft error rate

Dynamic Schottky barrier MOSFET device and method of manufacture

Silicon thin film transistors, systems, and methods of making same

Metal source and drain transistor having high dielectric constant g...

Silicon thin film transistors, systems, and methods of making same

Field effect transistor having source and/or drain forming schottky...

CMOS device with zero soft error rate

Transistor having high dielectric constant gate insulating layer an...

Field effect transistor having source and/or drain forming Schottky...

Schottky-barrier mosfet manufacturing method using isotropic etch p...

Short-channel Schottky-barrier MOSFET device and manufacturing method

Short-channel Schottky-barrier MOSFET device and manufacturing method

Schottky barrier CMOS fabrication method

Transistor having high dielectric constant gate insulating layer an...

Field effect transistor having source and/or drain forming Schottky...

Short-channel schottky-barrier MOSFET device and manufacturing method

Short-channel schottky-barrier MOSFET device

Method of manufacturing a short-channel FET with Schottky-barrier s...

Patents Applicationslast 30 patents

VACUUM-CAPACITOR METHOD AND APPARATUS

VACUUM-CAPACITOR APPARATUS AND METHOD

METHOD AND ASSOCIATED CAPACITORS HAVING ENGINEERED ELECTRODES WITH...

CAPACITORS HAVING ENGINEERED ELECTRODES WITH VERY HIGH ENERGY DENSI...

CAPACITORS HAVING ENGINEERED ELECTRODES WITH VERY HIGH ENERGY DENSITY

METHOD AND APPARATUS FOR CAPACITORS HAVING ENGINEERED ELECTRODES WI...

Charger

POWER TRANSISTOR WITH METAL SOURCE AND METHOD OF MANUFACTURE

DYNAMIC SCHOTTKY BARRIER MOSFET DEVICE AND METHOD OF MANUFACTURE

SHORT-CHANNEL SCHOTTKY-BARRIER MOSFET DEVICE AND METHOD OF MANUFACTURE

METHOD OF MANUFACTURING A CMOS DEVICE WITH ZERO SOFT ERROR RATE

METAL SOURCE AND DRAIN TRANSISTOR HAVING HIGH DIELECTRIC CONSTANT G...

POWER TRANSISTOR WITH METAL SOURCE AND METHOD OF MANUFACTURE

SHORT-CHANNEL SCHOTTKY-BARRIER MOSFET DEVICE AND MANUFACTURING METHOD

SCHOTTKY BARRIER INTEGRATED CIRCUIT

DYNAMIC SCHOTTKY BARRIER MOSFET DEVICE AND METHOD OF MANUFACTURE

FIELD EFFECT TRANSISTOR HAVING SOURCE AND/OR DRAIN FORMING SCHOTTKY...

METAL SOURCE/DRAIN SCHOTTKY BARRIER SILICON-ON-NOTHING MOSFET DEVICE

SCHOTTKY BARRIER CMOS DEVICE AND METHOD

SILICON THIN FILM TRANSISTORS, SYSTEMS, AND METHODS OF MAKING SAME

SILICON THIN FILM TRANSISTORS, SYSTEMS, AND METHODS OF MAKING SAME

Field effect transistor having source and/or drain forming Schottky...

Metal source/drain Schottky barrier silicon-on-nothing MOSFET devic...

Metal Source Power Transistor And Method Of Manufacture

CMOS device with zero soft error rate

Dynamic Schottky barrier MOSFET device and method of manufacture

Transistor having high dielectric constant gate insulating layer an...

Short-channel schottky-barrier MOSFET device and manufacturing method

Schottky barrier MOSFET device and circuit

Transistor having high dielectric constant gate insulating layer an...