Jonathan Lin

Person

Milpitas, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Field leakage by using a thin layer of nitride deposited by chemica...
- Patent number 6,211,022
- Issue date Apr 3, 2001
- Advanced Micro Devices, Inc.
- Jonathan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of borophosphorous tetraethyl orthosilicate (BPTEOS) to improve...
- Patent number 5,908,308
- Issue date Jun 1, 1999
- Advanced Micro Devices, Inc.
- Radu Barsan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Depletion mode pass gates with controlling decoder and negative pow...
- Patent number 5,801,551
- Issue date Sep 1, 1998
- Advanced Micro Devices, Inc.
- Jonathan Lin
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Field implant for semiconductor device
- Patent number 5,789,269
- Issue date Aug 4, 1998
- Advanced Micro Devices, Inc.
- Sunil Mehta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low power CMOS array for a PLD with program and erase using control...
- Patent number 5,754,471
- Issue date May 19, 1998
- Advanced Micro Devices, Inc.
- Jack Zezhong Peng
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory cells using only positive charge to store data
- Patent number 5,742,542
- Issue date Apr 21, 1998
- Advanced Micro Devices, Inc.
- Jonathan Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for screening non-volatile memory and programmable logic dev...
- Patent number 5,700,698
- Issue date Dec 23, 1997
- Advanced Micro Devices, Inc.
- Radu Barsan
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell for a programmable logic device (PLD) avoiding pumping...
- Patent number 5,666,309
- Issue date Sep 9, 1997
- Advanced Micro Devices, Inc.
- Jack Zezhong Peng
- G11 - INFORMATION STORAGE
Information Patent Grant
CMOS memory cell with tunneling during program and erase through th...
- Patent number 5,646,901
- Issue date Jul 8, 1997
- Advanced Micro Devices, Inc.
- Bradley A. Sharpe-Geisler
- G11 - INFORMATION STORAGE
Information Patent Grant
Control gate-addressed CMOS non-volatile cell that programs through...
- Patent number 5,615,150
- Issue date Mar 25, 1997
- Advanced Micro Devices, Inc.
- Jonathan Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Field implant for semiconductor device
- Patent number 5,604,370
- Issue date Feb 18, 1997
- Advanced Micro Devices, Inc.
- Sunil Mehta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS memory cell with gate oxide of both NMOS and PMOS transistors...
- Patent number 5,596,524
- Issue date Jan 21, 1997
- Advanced Micro Devices, Inc.
- Jonathan Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Completely complementary MOS memory cell with tunneling through the...
- Patent number 5,594,687
- Issue date Jan 14, 1997
- Advanced Micro Devices, Inc.
- Jonathan Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
CMOS EEPROM cell with tunneling window in the read path
- Patent number 5,587,945
- Issue date Dec 24, 1996
- Advanced Micro Devices, Inc.
- Jonathan Lin
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
IMPROVING FIELD LEAKAGE BY USING A THIN LAYER OF NITRIDE DEPOSITED...
- Publication number 20020000626
- Publication date Jan 3, 2002
- Advanced Micro Devices, Inc.
- JONATHAN LIN
- H01 - BASIC ELECTRIC ELEMENTS

Jonathan Lin

Person

Patents Grantslast 30 patents

Field leakage by using a thin layer of nitride deposited by chemica...

Use of borophosphorous tetraethyl orthosilicate (BPTEOS) to improve...

Depletion mode pass gates with controlling decoder and negative pow...

Field implant for semiconductor device

Low power CMOS array for a PLD with program and erase using control...

Non-volatile memory cells using only positive charge to store data

Method for screening non-volatile memory and programmable logic dev...

Memory cell for a programmable logic device (PLD) avoiding pumping...

CMOS memory cell with tunneling during program and erase through th...

Control gate-addressed CMOS non-volatile cell that programs through...

Field implant for semiconductor device

CMOS memory cell with gate oxide of both NMOS and PMOS transistors...

Completely complementary MOS memory cell with tunneling through the...

CMOS EEPROM cell with tunneling window in the read path

Patents Applicationslast 30 patents

IMPROVING FIELD LEAKAGE BY USING A THIN LAYER OF NITRIDE DEPOSITED...