Joon Hong Park

Person

Dublin, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Ultrahigh selective nitride etch to form FinFET devices
- Patent number 11,469,079
- Issue date Oct 11, 2022
- Lam Research Corporation
- Kwame Eason
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for selectively etching film
- Patent number 10,727,089
- Issue date Jul 28, 2020
- Lam Research Corporation
- James Eugene Caron
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chamber member of a plasma source and pedestal with radially outwar...
- Patent number 10,699,878
- Issue date Jun 30, 2020
- Lam Research Corporation
- James Eugene Caron
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultrahigh selective polysilicon etch with high throughput
- Patent number 10,283,615
- Issue date May 7, 2019
- Novellus Systems, Inc.
- Dengliang Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for ultrahigh selective nitride etch
- Patent number 10,192,751
- Issue date Jan 29, 2019
- Lam Research Corporation
- Dengliang Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for increasing electron density levels in a plasm...
- Patent number 10,147,588
- Issue date Dec 4, 2018
- Lam Research Corporation
- Kwame Eason
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for achieving ultra-high selectivity while etching silicon n...
- Patent number 9,911,620
- Issue date Mar 6, 2018
- Lam Research Corporation
- Helen H. Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for selectively etching tungsten in a downstrea...
- Patent number 9,837,286
- Issue date Dec 5, 2017
- Lam Research Corporation
- Dengliang Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-limited planarization of hardmask
- Patent number 9,640,409
- Issue date May 2, 2017
- Lam Research Corporation
- Dengliang Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photoresist strip processes for improved device integrity
- Patent number 9,613,825
- Issue date Apr 4, 2017
- Novellus Systems, Inc.
- Roey Shaviv
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Contact clean in high-aspect ratio structures
- Patent number 9,558,928
- Issue date Jan 31, 2017
- Lam Research Corporation
- Bayu Thedjoisworo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Removal of native oxide with high selectivity
- Patent number 9,034,773
- Issue date May 19, 2015
- Novellus Systems, Inc.
- Bayu Thedjoisworo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon etch with high selectivity
- Patent number 8,916,477
- Issue date Dec 23, 2014
- Novellus Systems, Inc.
- Bayu Thedjoisworo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ULTRAHIGH SELECTIVE NITRIDE ETCH TO FORM FINFET DEVICES
- Publication number 20230084901
- Publication date Mar 16, 2023
- LAM RESEARCH CORPORATION
- Kwame EASON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRAHIGH SELECTIVE POLYSILICON ETCH WITH HIGH THROUGHPUT
- Publication number 20190221654
- Publication date Jul 18, 2019
- Novellus Systems, Inc.
- Dengliang Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRAHIGH SELECTIVE NITRIDE ETCH TO FORM FINFET DEVICES
- Publication number 20180269070
- Publication date Sep 20, 2018
- LAM RESEARCH CORPORATION
- Kwame Eason
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS FOR ACHIEVING ULTRA-HIGH SELECTIVITY WHILE ETCHING SILICO...
- Publication number 20180158692
- Publication date Jun 7, 2018
- LAM RESEARCH CORPORATION
- Helen H. Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR CONTROLLING PROCESS WITHIN WAFER UNIFORMITY
- Publication number 20170278679
- Publication date Sep 28, 2017
- LAM RESEARCH CORPORATION
- Ivelin Angelov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHAMBER MEMEBER OF A PLASMA SOURCE AND PEDESTAL WITH RADIALLY OUTWA...
- Publication number 20170236688
- Publication date Aug 17, 2017
- LAM RESEARCH CORPORATION
- James Eugene Caron
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM AND METHOD FOR INCREASING ELECTRON DENSITY LEVELS IN A PLASM...
- Publication number 20170236694
- Publication date Aug 17, 2017
- LAM RESEARCH CORPORATION
- Kwame Eason
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHODS FOR SELECTIVELY ETCHING FILM
- Publication number 20170236731
- Publication date Aug 17, 2017
- LAM RESEARCH CORPORATION
- James Eugene Caron
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHODS FOR ULTRAHIGH SELECTIVE NITRIDE ETCH
- Publication number 20170110335
- Publication date Apr 20, 2017
- LAM RESEARCH CORPORATION
- Dengliang Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHODS FOR SELECTIVELY ETCHING TUNGSTEN IN A DOWNSTREA...
- Publication number 20170069511
- Publication date Mar 9, 2017
- LAM RESEARCH CORPORATION
- Dengliang Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR ACHIEVING ULTRA-HIGH SELECTIVITY WHILE ETCHING SILICON N...
- Publication number 20160247688
- Publication date Aug 25, 2016
- LAM RESEARCH CORPORATION
- Helen H. Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRAHIGH SELECTIVE POLYSILICON ETCH WITH HIGH THROUGHPUT
- Publication number 20160064519
- Publication date Mar 3, 2016
- LAM RESEARCH CORPORATION
- Dengliang Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT CLEAN IN HIGH-ASPECT RATIO STRUCTURES
- Publication number 20160064212
- Publication date Mar 3, 2016
- LAM RESEARCH CORPORATION
- Bayu Thedjoisworo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLYSILICON ETCH WITH HIGH SELECTIVITY
- Publication number 20150075715
- Publication date Mar 19, 2015
- Novellus Systems, Inc.
- Bayu Thedjoisworo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REMOVAL OF NATIVE OXIDE WITH HIGH SELECTIVITY
- Publication number 20140004708
- Publication date Jan 2, 2014
- Bayu Thedjoisworo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLYSILICON ETCH WITH HIGH SELECTIVITY
- Publication number 20140004707
- Publication date Jan 2, 2014
- Bayu Thedjoisworo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHOTORESIST STRIP PROCESSES FOR IMPROVED DEVICE INTEGRITY
- Publication number 20130048014
- Publication date Feb 28, 2013
- Roey Shaviv
- H01 - BASIC ELECTRIC ELEMENTS

Joon Hong Park

Person

Patents Grantslast 30 patents

Ultrahigh selective nitride etch to form FinFET devices

Systems and methods for selectively etching film

Chamber member of a plasma source and pedestal with radially outwar...

Ultrahigh selective polysilicon etch with high throughput

Systems and methods for ultrahigh selective nitride etch

System and method for increasing electron density levels in a plasm...

Method for achieving ultra-high selectivity while etching silicon n...

Systems and methods for selectively etching tungsten in a downstrea...

Self-limited planarization of hardmask

Photoresist strip processes for improved device integrity

Contact clean in high-aspect ratio structures

Removal of native oxide with high selectivity

Polysilicon etch with high selectivity

Patents Applicationslast 30 patents

ULTRAHIGH SELECTIVE NITRIDE ETCH TO FORM FINFET DEVICES

ULTRAHIGH SELECTIVE POLYSILICON ETCH WITH HIGH THROUGHPUT

ULTRAHIGH SELECTIVE NITRIDE ETCH TO FORM FINFET DEVICES

APPARATUS FOR ACHIEVING ULTRA-HIGH SELECTIVITY WHILE ETCHING SILICO...

METHOD AND APPARATUS FOR CONTROLLING PROCESS WITHIN WAFER UNIFORMITY

CHAMBER MEMEBER OF A PLASMA SOURCE AND PEDESTAL WITH RADIALLY OUTWA...

SYSTEM AND METHOD FOR INCREASING ELECTRON DENSITY LEVELS IN A PLASM...

SYSTEMS AND METHODS FOR SELECTIVELY ETCHING FILM

SYSTEMS AND METHODS FOR ULTRAHIGH SELECTIVE NITRIDE ETCH

SYSTEMS AND METHODS FOR SELECTIVELY ETCHING TUNGSTEN IN A DOWNSTREA...

METHOD FOR ACHIEVING ULTRA-HIGH SELECTIVITY WHILE ETCHING SILICON N...

ULTRAHIGH SELECTIVE POLYSILICON ETCH WITH HIGH THROUGHPUT

CONTACT CLEAN IN HIGH-ASPECT RATIO STRUCTURES

POLYSILICON ETCH WITH HIGH SELECTIVITY

REMOVAL OF NATIVE OXIDE WITH HIGH SELECTIVITY

POLYSILICON ETCH WITH HIGH SELECTIVITY

PHOTORESIST STRIP PROCESSES FOR IMPROVED DEVICE INTEGRITY