Josef Böck

Person

Munchen, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Process for the simultaneous deposition of crystalline and amorphou...
- Patent number 8,102,052
- Issue date Jan 24, 2012
- Infineon Technologies AG
- Herbert Schäfer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a transistor structure
- Patent number 8,003,475
- Issue date Aug 23, 2011
- Infineon Technologies AG
- Josef Böck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-frequency bipolar transistor and method for the production the...
- Patent number 7,968,972
- Issue date Jun 28, 2011
- Infineon Technologies AG
- Josef Böck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for the simultaneous deposition of crystalline and amorphou...
- Patent number 7,947,552
- Issue date May 24, 2011
- Infineon Technologies AG
- Herbert Schäfer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-frequency bipolar transistor
- Patent number 7,719,088
- Issue date May 18, 2010
- Infineon Technologies AG
- Josef Böck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor structure
- Patent number 7,449,389
- Issue date Nov 11, 2008
- Infineon Technologies AG
- Thomas Meister
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor comprising carbon-doped semiconductor
- Patent number 7,420,228
- Issue date Sep 2, 2008
- Infineon Technologies AG
- Josef Bock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a transistor structure
- Patent number 7,371,650
- Issue date May 13, 2008
- Infineon Technologies AG
- Josef Böck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for the production of a bipolar semiconductor component, esp...
- Patent number 7,285,470
- Issue date Oct 23, 2007
- Infineon Technologies AG
- Josef Bock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor
- Patent number 7,256,472
- Issue date Aug 14, 2007
- Infineon Technologies AG
- Josef Bock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for the production of a bipolar transistor
- Patent number 7,105,415
- Issue date Sep 12, 2006
- Infineon Technologies AG
- Josef Bock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for a parallel production of an MOS transistor and a bipolar...
- Patent number 7,018,884
- Issue date Mar 28, 2006
- Infineon Technologies AG
- Adrian Berthold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing two differently doped adjacent regions in an...
- Patent number 6,716,712
- Issue date Apr 6, 2004
- Infineon Technologies AG
- Josef Böck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a bipolar transistor and method for fabricat...
- Patent number 6,635,545
- Issue date Oct 21, 2003
- Infineon Technologies AG
- Josef Böck
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Process for the Simultaneous Deposition of Crystalline and Amorphou...
- Publication number 20120074405
- Publication date Mar 29, 2012
- INFINEON TECHNOLOGIES AG
- Herbert Schäfer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for Simultaneous Deposition of Crystalline and Amorphous La...
- Publication number 20110133188
- Publication date Jun 9, 2011
- INFINEON TECHNOLOGIES AG
- Herbert Schäfer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-FREQUENCY BIPOLAR TRANSISTOR AND METHOD FOR THE PRODUCTION THE...
- Publication number 20100155896
- Publication date Jun 24, 2010
- Infineon Technologies AG
- Josef Böck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A TRANSISTOR STRUCTURE
- Publication number 20080227261
- Publication date Sep 18, 2008
- Infineon AG.
- Josef Bock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A SEMICONDUCTOR STRUCTURE
- Publication number 20080102593
- Publication date May 1, 2008
- INFINEON TECHNOLOGIES AG
- Thomas Meister
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar transistor
- Publication number 20060097352
- Publication date May 11, 2006
- Josef Bock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar transistor
- Publication number 20060040453
- Publication date Feb 23, 2006
- Josef Bock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for the production of a bipolar semiconductor component, esp...
- Publication number 20060040456
- Publication date Feb 23, 2006
- Josef Bock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-frequency bipolar transistor and method for the production the...
- Publication number 20060038258
- Publication date Feb 23, 2006
- Infineon Technologies AG
- Josef Bock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for producing a transistor structure
- Publication number 20060009002
- Publication date Jan 12, 2006
- Josef Bock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for the production of a bipolar transistor
- Publication number 20050233536
- Publication date Oct 20, 2005
- Josef Bock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for a parallel production of an MOS transistor and a bipolar...
- Publication number 20040185611
- Publication date Sep 23, 2004
- Infineon Technologies AG
- Adrian Berthold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating a bipolar transistor and method for fabricat...
- Publication number 20020168829
- Publication date Nov 14, 2002
- Josef Bock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for producing two differently doped adjacent regions in an...
- Publication number 20020132440
- Publication date Sep 19, 2002
- Josef Bock
- H01 - BASIC ELECTRIC ELEMENTS

Josef Böck

Person

Patents Grantslast 30 patents

Process for the simultaneous deposition of crystalline and amorphou...

Method for fabricating a transistor structure

High-frequency bipolar transistor and method for the production the...

Process for the simultaneous deposition of crystalline and amorphou...

High-frequency bipolar transistor

Method for fabricating a semiconductor structure

Bipolar transistor comprising carbon-doped semiconductor

Method for producing a transistor structure

Method for the production of a bipolar semiconductor component, esp...

Bipolar transistor

Method for the production of a bipolar transistor

Method for a parallel production of an MOS transistor and a bipolar...

Process for producing two differently doped adjacent regions in an...

Method for fabricating a bipolar transistor and method for fabricat...

Patents Applicationslast 30 patents

Process for the Simultaneous Deposition of Crystalline and Amorphou...

Process for Simultaneous Deposition of Crystalline and Amorphous La...

HIGH-FREQUENCY BIPOLAR TRANSISTOR AND METHOD FOR THE PRODUCTION THE...

METHOD FOR FABRICATING A TRANSISTOR STRUCTURE

METHOD FOR FABRICATING A SEMICONDUCTOR STRUCTURE

Bipolar transistor

Bipolar transistor

Method for the production of a bipolar semiconductor component, esp...

High-frequency bipolar transistor and method for the production the...

Method for producing a transistor structure

Method for the production of a bipolar transistor

Method for a parallel production of an MOS transistor and a bipolar...

Method for fabricating a bipolar transistor and method for fabricat...

Process for producing two differently doped adjacent regions in an...