Joseph A. Calviello

Person

Kings Park, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of forming integrated limiter and amplifying devices
- Patent number 5,445,985
- Issue date Aug 29, 1995
- Ail Systems, Inc.
- Joseph A. Calviello
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Method of making a monolithic integrated circuit having compound se...
- Patent number 5,356,831
- Issue date Oct 18, 1994
- Eaton Corporation
- Joseph A. Calviello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated limiter and amplifying devices
- Patent number 5,341,114
- Issue date Aug 23, 1994
- Ail Systems, Inc.
- Joseph A. Calviello
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Monolithic integrated circuit having compound semiconductor layer e...
- Patent number 5,164,359
- Issue date Nov 17, 1992
- Eaton Corporation
- Joseph A. Calviello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic integrated circuit having compound semiconductor layer e...
- Patent number 5,159,413
- Issue date Oct 27, 1992
- Eaton Corporation
- Joseph A. Calviello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implantation masking method and devices
- Patent number 5,138,406
- Issue date Aug 11, 1992
- Eaton Corporation
- Joseph A. Calviello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making an FET by ion implantation through a partially opa...
- Patent number 5,030,579
- Issue date Jul 9, 1991
- Eaton Corporation
- Joseph A. Calviello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature semiconductor bonding process with chemical vapor r...
- Patent number 5,010,036
- Issue date Apr 23, 1991
- Eaton Corporation
- Joseph A. Calviello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried channel FET with lateral growth over amorphous region
- Patent number 4,935,789
- Issue date Jun 19, 1990
- Eaton Corporation
- Joseph A. Calviello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
T-type undercut electrical contact on a semiconductor substrate
- Patent number 4,935,805
- Issue date Jun 19, 1990
- Eaton Corporation
- Joseph A. Calviello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
T-type undercut electrical contact process on a semiconductor subst...
- Patent number 4,923,827
- Issue date May 8, 1990
- Eaton Corporation
- Joseph A. Calviello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating quasi-monolithic integrated circuits
- Patent number 4,876,176
- Issue date Oct 24, 1989
- Eaton Corporation
- Joseph A. Calviello
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Making a buried channel FET with lateral growth over amorphous region
- Patent number 4,837,175
- Issue date Jun 6, 1989
- Eaton Corporation
- Joseph A. Calviello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for buried channel field effect transistor for microwave and...
- Patent number 4,833,095
- Issue date May 23, 1989
- Eaton Corporation
- Joseph A. Calviello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabrication of monolithic integrated circuits
- Patent number 4,789,645
- Issue date Dec 6, 1988
- Eaton Corporation
- Joseph A. Calviello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating buried channel field-effect transistor for m...
- Patent number 4,724,220
- Issue date Feb 9, 1988
- Eaton Corporation
- Joseph A. Calviello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating edge channel FET
- Patent number 4,701,996
- Issue date Oct 27, 1987
- Joseph A. Calviello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating MOMOM tunnel emission transistor
- Patent number 4,692,997
- Issue date Sep 15, 1987
- Eaton Corporation
- Joseph A. Calviello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating MOMS semiconductor device
- Patent number 4,683,642
- Issue date Aug 4, 1987
- Eaton Corporation
- Joseph A. Calviello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making an edge junction schottky diode
- Patent number 4,674,177
- Issue date Jun 23, 1987
- Eaton Corporation
- Joseph A. Calviello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Edge junction schottky diode
- Patent number 4,665,413
- Issue date May 12, 1987
- Eaton Corporation
- Joseph A. Calviello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOMS tunnel emission transistor
- Patent number 4,631,560
- Issue date Dec 23, 1986
- Eaton Corporation
- Joseph A. Calviello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOMOM tunnel emission transistor
- Patent number 4,630,081
- Issue date Dec 16, 1986
- Eaton Corporation
- Joseph A. Calviello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried channel MESFET with backside source contact
- Patent number 4,624,004
- Issue date Nov 18, 1986
- Eaton Corporation
- Joseph A. Calviello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Edge channel FET
- Patent number 4,620,207
- Issue date Oct 28, 1986
- Eaton Corporation
- Joseph A. Calviello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating buried channel field effect transistor for m...
- Patent number 4,601,096
- Issue date Jul 22, 1986
- Eaton Corporation
- Joseph A. Calviello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light sensitive detector
- Patent number 4,549,194
- Issue date Oct 22, 1985
- Eaton Corporation
- Joseph A. Calviello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making field-effect transistors with micron and submicron...
- Patent number 4,312,113
- Issue date Jan 26, 1982
- Eaton Corporation
- Joseph A. Calviello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making field-effect transistors with micron and submicron...
- Patent number 4,312,112
- Issue date Jan 26, 1982
- Eaton Corporation
- Joseph A. Calviello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors with micron and submicron gate lengths
- Patent number 4,310,570
- Issue date Jan 12, 1982
- Eaton Corporation
- Joseph A. Calviello
- H01 - BASIC ELECTRIC ELEMENTS

Joseph A. Calviello

Person

Patents Grantslast 30 patents

Method of forming integrated limiter and amplifying devices

Method of making a monolithic integrated circuit having compound se...

Integrated limiter and amplifying devices

Monolithic integrated circuit having compound semiconductor layer e...

Monolithic integrated circuit having compound semiconductor layer e...

Ion implantation masking method and devices

Method of making an FET by ion implantation through a partially opa...

Low temperature semiconductor bonding process with chemical vapor r...

Buried channel FET with lateral growth over amorphous region

T-type undercut electrical contact on a semiconductor substrate

T-type undercut electrical contact process on a semiconductor subst...

Method for fabricating quasi-monolithic integrated circuits

Making a buried channel FET with lateral growth over amorphous region

Method for buried channel field effect transistor for microwave and...

Method for fabrication of monolithic integrated circuits

Method for fabricating buried channel field-effect transistor for m...

Method for fabricating edge channel FET

Method for fabricating MOMOM tunnel emission transistor

Method for fabricating MOMS semiconductor device

Method for making an edge junction schottky diode

Edge junction schottky diode

MOMS tunnel emission transistor

MOMOM tunnel emission transistor

Buried channel MESFET with backside source contact

Edge channel FET

Method for fabricating buried channel field effect transistor for m...

Light sensitive detector

Method of making field-effect transistors with micron and submicron...

Method of making field-effect transistors with micron and submicron...

Field-effect transistors with micron and submicron gate lengths