Joseph C. Holzer

Person

St. Peters, MO, US

People

Patents Grantslast 30 patents

Information Patent Grant
Apparatus and method for doping a semiconductor melt comprising a s...
- Patent number 10,337,118
- Issue date Jul 2, 2019
- Corner Star Limited
- Jihong Chen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Controlling a melt-solid interface shape of a growing silicon cryst...
- Patent number 8,398,765
- Issue date Mar 19, 2013
- MEMC Electronic Materials, Inc.
- Hariprasad Sreedharamurthy
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method and device for continuously measuring silicon island elevation
- Patent number 7,573,587
- Issue date Aug 11, 2009
- MEMC Electronic Materials, Inc.
- Zheng Lu
- G01 - MEASURING TESTING
Information Patent Grant
Process for forming low defect density, ideal oxygen precipitating...
- Patent number 7,442,253
- Issue date Oct 28, 2008
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low defect density, ideal oxygen precipitating silicon
- Patent number 7,229,693
- Issue date Jun 12, 2007
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single crystal silicon wafer having an epitaxial layer substantiall...
- Patent number 7,097,718
- Issue date Aug 29, 2006
- MEMC Electronic Materials, Inc.
- Luciano Mule'Stagno
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Process for producing low defect density, ideal oxygen precipitatin...
- Patent number 6,896,728
- Issue date May 24, 2005
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vacancy, dominsated, defect-free silicon
- Patent number 6,840,997
- Issue date Jan 11, 2005
- MEMC Electronic Materials, Inc.
- Robert A. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing czochralski silicon free of agglomerated self-...
- Patent number 6,635,587
- Issue date Oct 21, 2003
- MEMC Electronic Materials, Inc.
- Luciano Mule'Stagno
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low defect density epitaxial wafer and a process for the preparatio...
- Patent number 6,632,278
- Issue date Oct 14, 2003
- MEMC Electronic Materials, Inc.
- Robert A. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low defect density regions of self-interstitial dominated silicon
- Patent number 6,605,150
- Issue date Aug 12, 2003
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial wafer substantially free of grown-in defects
- Patent number 6,565,649
- Issue date May 20, 2003
- MEMC Electronic Materials, Inc.
- Luciano Mule'Stagno
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Process for producing low defect density, ideal oxygen precipitatin...
- Patent number 6,555,194
- Issue date Apr 29, 2003
- MEMC Electronic Materials, Inc.
- Robert A. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low defect density silicon and a process for producing low defect d...
- Patent number 6,409,827
- Issue date Jun 25, 2002
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low defect density, self-interstitial dominated silicon
- Patent number 6,409,826
- Issue date Jun 25, 2002
- MEMC Electronic Materials, Inc.
- Robert A. Falster
- C30 - CRYSTAL GROWTH
Information Patent Grant
Vacancy dominated, defect-free silicon
- Patent number 6,379,642
- Issue date Apr 30, 2002
- MEMC Electronic Materials, Inc.
- Robert A. Falster
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low defect density silicon
- Patent number 6,287,380
- Issue date Sep 11, 2001
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial silicon wafers substantially free of grown-in defects
- Patent number 6,284,039
- Issue date Sep 4, 2001
- MEMC Electronic Materials, Inc.
- Luciano Mule'Stagno
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low defect density self-interstitial dominated silicon
- Patent number 6,254,672
- Issue date Jul 3, 2001
- MEMC Electronic Materials, Inc.
- Robert A. Falster
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low defect density, ideal oxygen precipitating silicon
- Patent number 6,190,631
- Issue date Feb 20, 2001
- MEMC Electronic Materials, Inc.
- Robert A. Falster
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low defect density vacancy dominated silicon
- Patent number 5,919,302
- Issue date Jul 6, 1999
- MEMC Electronic Materials, Inc.
- Robert A. Falster
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for controlling thermal history of Czochralski-grown silicon
- Patent number 5,779,791
- Issue date Jul 14, 1998
- MEMC Electronic Materials, Inc.
- Harold W. Korb
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for etching a semiconductor material without altering flow p...
- Patent number 5,573,680
- Issue date Nov 12, 1996
- MEMC Electronic Materials, Inc.
- Roger W. Shaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatus for determining interstitial oxygen content o...
- Patent number 5,550,374
- Issue date Aug 27, 1996
- MEMC Electronic Materials, Inc.
- Joseph C. Holzer
- G01 - MEASURING TESTING

Patents Applicationslast 30 patents

Information Patent Application
Methods for Removing a Melt of Silicon from a Crucible and Related...
- Publication number 20190203378
- Publication date Jul 4, 2019
- Corner Star Limited
- Bayard K. Johnson
- C30 - CRYSTAL GROWTH
Information Patent Application
SYNTHETIC LINED CRUCIBLE ASSEMBLY FOR CZOCHRALSKI CRYSTAL GROWTH
- Publication number 20190203377
- Publication date Jul 4, 2019
- Corner Star Limited
- Arash Mehdizadeh Dehkordi
- B05 - SPRAYING OR ATOMISING IN GENERAL APPLYING LIQUIDS OR OTHER FLUENT MATER...
Information Patent Application
HYBRID CRUCIBLE ASSEMBLY FOR CZOCHRALSKI CRYSTAL GROWTH
- Publication number 20190078231
- Publication date Mar 14, 2019
- Corner Star Limited
- Arash Mehdizadeh Dehkordi
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS AND METHOD FOR INTRODUCING VOLATILE DOPANTS INTO A MELT
- Publication number 20170356099
- Publication date Dec 14, 2017
- Corner Star Limited
- Jihong CHEN
- C30 - CRYSTAL GROWTH
Information Patent Application
Controlling a Melt-Solid Interface Shape of a Growing Silicon Cryst...
- Publication number 20090320743
- Publication date Dec 31, 2009
- MEMC Electronic Materials, Inc.
- Hariprasad Sreedharamurthy
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR FORMING LOW DEFECT DENSITY, IDEAL OXYGEN PRECIPITATING...
- Publication number 20070224783
- Publication date Sep 27, 2007
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Method and apparatus for growing silicon crystal by controlling mel...
- Publication number 20060005761
- Publication date Jan 12, 2006
- MEMC Electronic Materials, Inc.
- Milind Kulkarni
- C30 - CRYSTAL GROWTH
Information Patent Application
Vacancy-dominated, defect-free silicon
- Publication number 20050238905
- Publication date Oct 27, 2005
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Low defect density silicon
- Publication number 20050205000
- Publication date Sep 22, 2005
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Low defect density, ideal oxygen precipitating silicon
- Publication number 20050170610
- Publication date Aug 4, 2005
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for producing low defect density silicon
- Publication number 20040089224
- Publication date May 13, 2004
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Low defect density silicon
- Publication number 20040070012
- Publication date Apr 15, 2004
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for producing low defect density, ideal oxygen precipitatin...
- Publication number 20040025782
- Publication date Feb 12, 2004
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Single crystal silicon wafer having an epitaxial layer substantiall...
- Publication number 20030205191
- Publication date Nov 6, 2003
- MEMC Electronic Materials, Inc.
- Luciano Mule ' Stagno
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for suppressing the nucleation and/or growth of interstitia...
- Publication number 20030196587
- Publication date Oct 23, 2003
- MEMC Electronic Materials, Inc.
- Kirk D. McCallum
- C30 - CRYSTAL GROWTH
Information Patent Application
Vacancy, dominated, defect-free silicon
- Publication number 20030051657
- Publication date Mar 20, 2003
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
LOW DEFECT DENSITY EPITAXIAL WAFER AND A PROCESS FOR THE PREPARATIO...
- Publication number 20020170485
- Publication date Nov 21, 2002
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Low defect density regions of self-interstitial dominated silicon
- Publication number 20020139294
- Publication date Oct 3, 2002
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Vacancy, dominsated, defect-free silicon
- Publication number 20020078880
- Publication date Jun 27, 2002
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Epitaxial silicon wafers substantially free of grown-in defects
- Publication number 20010039916
- Publication date Nov 15, 2001
- Luciano Mule' Stagno
- C30 - CRYSTAL GROWTH
Information Patent Application
Low defect density, self-interstitial dominated silicon
- Publication number 20010025597
- Publication date Oct 4, 2001
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Low defect density silicon and a process for producing low defect d...
- Publication number 20010020437
- Publication date Sep 13, 2001
- Robert J. Falster
- C30 - CRYSTAL GROWTH

Joseph C. Holzer

Person

Patents Grantslast 30 patents

Apparatus and method for doping a semiconductor melt comprising a s...

Controlling a melt-solid interface shape of a growing silicon cryst...

Method and device for continuously measuring silicon island elevation

Process for forming low defect density, ideal oxygen precipitating...

Low defect density, ideal oxygen precipitating silicon

Single crystal silicon wafer having an epitaxial layer substantiall...

Process for producing low defect density, ideal oxygen precipitatin...

Vacancy, dominsated, defect-free silicon

Method for producing czochralski silicon free of agglomerated self-...

Low defect density epitaxial wafer and a process for the preparatio...

Low defect density regions of self-interstitial dominated silicon

Epitaxial wafer substantially free of grown-in defects

Process for producing low defect density, ideal oxygen precipitatin...

Low defect density silicon and a process for producing low defect d...

Low defect density, self-interstitial dominated silicon

Vacancy dominated, defect-free silicon

Low defect density silicon

Epitaxial silicon wafers substantially free of grown-in defects

Low defect density self-interstitial dominated silicon

Low defect density, ideal oxygen precipitating silicon

Low defect density vacancy dominated silicon

Process for controlling thermal history of Czochralski-grown silicon

Method for etching a semiconductor material without altering flow p...

Methods and apparatus for determining interstitial oxygen content o...

Patents Applicationslast 30 patents

Methods for Removing a Melt of Silicon from a Crucible and Related...

SYNTHETIC LINED CRUCIBLE ASSEMBLY FOR CZOCHRALSKI CRYSTAL GROWTH

HYBRID CRUCIBLE ASSEMBLY FOR CZOCHRALSKI CRYSTAL GROWTH

APPARATUS AND METHOD FOR INTRODUCING VOLATILE DOPANTS INTO A MELT

Controlling a Melt-Solid Interface Shape of a Growing Silicon Cryst...

PROCESS FOR FORMING LOW DEFECT DENSITY, IDEAL OXYGEN PRECIPITATING...

Method and apparatus for growing silicon crystal by controlling mel...

Vacancy-dominated, defect-free silicon

Low defect density silicon

Low defect density, ideal oxygen precipitating silicon

Process for producing low defect density silicon

Low defect density silicon

Process for producing low defect density, ideal oxygen precipitatin...

Single crystal silicon wafer having an epitaxial layer substantiall...

Process for suppressing the nucleation and/or growth of interstitia...

Vacancy, dominated, defect-free silicon

LOW DEFECT DENSITY EPITAXIAL WAFER AND A PROCESS FOR THE PREPARATIO...

Low defect density regions of self-interstitial dominated silicon

Vacancy, dominsated, defect-free silicon

Epitaxial silicon wafers substantially free of grown-in defects

Low defect density, self-interstitial dominated silicon

Low defect density silicon and a process for producing low defect d...