Abe, T., et al., “Behavior of Point Defects in FZ Silicon Crystals”, Semiconductor Silicon 1990, Proceedings of the Sixth International Symposium on Silicon Materials Science and Technology, vol. 90-7 (1990), pp. 105-116. |
Eidenzon, A.M., et al., “Influence Of Growth Rate On Swirl Defects In Large Dislocation-Free Crystals Of Silicon Grown By the Czochralski Method”, Sov. Phys. Crystallogr.; vol. 30 , No. 5 (1985) pp. 576-580. |
European Search Report for European Patent Application No. EP 1 118 697 A3, dated Sep. 3, 2001, 3 pages. |
Foll, H. et al. “The Formation of Swirl Defects in Silicon by Agglomeration of Self-Interstitials”, Journal of Crystal Growth, 1977, pp. 90-1087, vol. 40, North-Holland Publishing Company. |
Hourai, M., et al., “Improvement of Gate Oxide Integrity Characteristics of CZ-Grown Silicon Crystals”, Progress in Semiconductor Fabrication presented by: Semiconductor Equipment and Materials International, Semicon/Europa 93, Mar. 30-Apr. 1, 1993, Geneva, Switzerland. |
de Kock, A. J. R., et al., “The Elimination of Vacancy-Cluster Formation in Dislocation-Free Silicon Crystals”, J. of the Electrochem. Soc.: Solid-State Science and Technology, vol. 118, No. 11, (Nov. 1971), pp. 1851-1856. |
de Kock, A. J. R., et al., “Effect of Growth Parameters on Formation and Elimination of Vacancy Clusters in Dislocation-Free Silicon Crystals”, Journal of Crystal Growth, vol. 22 (1974), pp. 311-320. |
Puzanov, N. I., et al., “Influence of Transitional Crystallization Regimes on Microdefects in Silicon”, USSR Academy of Sciences Newsletter, vol. 22, No. 8 (1986), pp. 1237-1242. |
Puzanov, N. I., et al., “Cultivation, Morphology and Structural Integrity of Dislocation Free Silicon Tetracrystals”, Inorganic Materials, vol. 32, No. 8 (1996), pp. 903-912. |
Roksnoer, P. J., “Microdefects in a Non-Striated Distribution in Floating-Zone Silicon Crystals”, Journal of Crystal Growth, vol. 53 (1981), pp. 563-573. |
Roksnoer, P. J., “The Mechanism of Formation of Microdefects in Silicon”, Journal of Crystal Growth, vol. 68 (1984), pp. 596-612. |
Shimanuki, Y., et al., “Effects of Thermal History on Microdefect Formation in Czochralski Silicon Crystals”, Japanese Journal of Applied Physics, vol. 24, No. 12, (1985), pp. 1594-1599. |
Wijaranakula, W., “Numerical Modeling of the Point Defect Aggregation during the Czochralski Silicon Crystal Growth”, Journal of Electrochemical Society, vol. 139, No. 2 (Feb. 1992), pp. 604-616. |
Zimmerman, H., et al. “Gold and Platinum Diffusion: the Key to the Understanding of Intrinsic Point Defect Behavior in Silicon”, Applied Physics A Solids and Surfaces, vol. A55, No. 1 (1992) pp. 121-134. |
de Kock, A. J. R., et al., “The Effect of Doping on the Formation of Swirl Defects in Dislocation-Free Czochralski-Grown Silicon Crystals”, Journal of Crystal Growth, vol. 49 (1980) pp. 718-734. |
Dornberger, E., et al., “The Dependence of Ring Like Distribution Stacking Faults on the Axial Temperature Gradient Czochralski Silicon Crystals”, Electrochemical Society Proceedings, vol. 95-4 (1995) pp. 294-305. |
Dornberger, E., et al., “Simulation of Growth-in Voids in Czochralski Silicon Crystals”, Electrochemical Society Proceedings, vol. 97, No. 22 pp. 40-49. |
Dornberger, E. et al., “Simulation of Non-Uniform Grown-in Void Distributions in Czochralski Silicon Crystals”, Electrochemical Society Proceedings, vol. 98-1 (1998) pp. 490-503. |
Dornberger, E., et al., “The Impact of Dwell Time Above 900 ° C During Crystal Growth on the Gate Oxide Integrity of Silicon Wafers”, Electrochemical Society Proceedings, vol. 96-13, pp. 140-151. |
Eidenzon, A. M., et al., “Defect-Free Silicon Crystals Grown by the Czochralski Technique”, Inorganic Materials, vol. 33, No. 3 (1997) pp. 219-225, Interperiodica Publishing. |
Eidenzon, A. M., et al., “Influence of Growth Rate on Swirl Defects in Large Dislocation-Free Crystals of Silicon Grown by the Czochralski Method”, Sov. Crystallogr., vol. 30, No. 5 (1985) pp. 576-580, American Institute of Physics. |
Hourai, M., et al., “Growth Parameters Determining the Type of Grown-In Defects in Czochralski Silicon Crystals”, Materials Science Forum, vols. 196-201 (1995) pp. 1713-1718. |
Kissinger, G., et al., “A Method For studying the Grown-In Defect Density Spectra in Czochralski Silicon Wafers”, Journal of Electrochemical Society, vol. 144, No. 4 (1997) pp. 1447-1456. |
Nakamura, K., et al., “Formation Process of Grown-In Defects in Czochralski Grown Silicon Crystals”, Journal of Crystal Growth, vol. 180 (1997) pp. 61-72. |
Park, J. G., et al., “Effect of Crystal Defects on Device Characteristics”, Electrochemical Society Proceedings, vol. 97-22 (Jul. 16, 1997), pp. 173-195. |
Puzanov, N. I. et al. “The Effect Of Thermal History During Crystal Growth on Oxygen Precipitation In Czochralski-grown Silicon”, Semicond. Sci. Technol., vol. 7 (1992) pp. 406-413. |
Puzanov, N. I. et al. “Modelling Microdefect Distribution In Dislocation-Free Si Crystals Grown From The Melt”; Journal of Crystal Growth 178 (1997) pp. 468-478. |
Puzanov, N. I. et al. “Formation Of The Bands of Anomalous Oxygen Precipitation In Czochralski-grown Si Crystals”, Journal of Crystal Growth 137 (1994) pp. 642-652. |
Puzanov, N. I. et al. “The Role Of Intrinsic Point Defects In The Formation Of Oxygen Precipitation Centers In Dislocation-Free Silicon”; Crystallography Reports; vol. 41; No. 1(1996) pp. 134-141. |
Puzanov, N. I. et al. “Harmful Microdefects In The Seed-End Portion Of Large-Diameter Silicon Ingots”, Inorganic Materials, vol. 33, No. 8 (1997) pp. 765-769. |
Puzanov, N. I., et al., “Relaxation in a System of Point Defects in a Growing Dislocation-Free Crystal of Silicon”, Sov. Phys. Crystallogr., vol. 31, No. 2 (1986) pp. 219-222, American Institute of Physics. |
Sinno, T., et al., “On the Dynamics of the Oxidation-Induced Stacking-Fault Ring in As-Grown Czochralski Silicon Crystals”, Applied Physics Letters, vol. 70, No. 17 (1997) pp. 2250-2252. |
Sinno, T., et al., “Point Defect Dynamics and the Oxidation-Induced Stacking-Fault Ring in Czochralski-Grown Silicon Crystals”, Journal of Electrochemical Society, vol. 145, No. 1 (1998) pp. 302-318. |
Tan, T. Y., “Point Defects, Diffusion Processes, and Swirl Defect Formation in Silicon”, Appl. Phys. A., vol. 37 (1985) pp. 1-17. |
Vanhellemont, J., et al., “Defects in As-Grown Silicon and Their Evolution During Heat Treatments”, Materials Science Forum, vols. 258-263 (1997) pp. 341-346. |
von Ammon, et al., “The Dependence of Bulk Defects on the Axial Temperature Gradient of Silicon Czochralski Growth”, Journal of Crystal Growth, vol. 151 (1995) pp. 273-277. |
Voronkov, V., et al., “Behaviour and Effects of Intrinsic Point Defects in the Growth of Large Silicon Crystals”, Electrochemical Society Proceedings, vol. 97-22 (1997), pp. 3-17. |
Voronkov, V., “The Mechanism of Swirl Defects Formation in Silicon”, Journal of Crystals Growth, 59 (1982), pp. 625-643. |
Winkler, R., et al., “Improvement of the Gate Oxide Integrity by Modifying Crystal Pulling and Its Impact on Device Failures”, Journal of Electrochemical Society, vol. 141, No. 5 (1994) pp. 1398-1401. |
Zimmerman, H., et al., “Vacancy Concentration Wafer Mapping in Silicon”, Journal of Crystal Growth 129 (1993) pp. 582-592. |