Jozef C. Mitros

Person

Dallas, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Reduced area single poly EEPROM
- Patent number 8,946,805
- Issue date Feb 3, 2015
- Texas Instruments Incorporated
- Jozef C. Mitros
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Area-efficient electrically erasable programmable memory cell
- Patent number 8,581,324
- Issue date Nov 12, 2013
- Texas Instruments Incorporated
- Xiaoju Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Area-efficient electrically erasable programmable memory cell
- Patent number 8,125,830
- Issue date Feb 28, 2012
- Texas Instruments Incorporated
- Xiaoju Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Single poly EEPROM without separate control gate nor erase regions
- Patent number 8,067,795
- Issue date Nov 29, 2011
- Texas Instruments Incorporated
- Jozef Czeslaw Mitros
- G11 - INFORMATION STORAGE
Information Patent Grant
Area-efficient electrically erasable programmable memory cell
- Patent number 7,919,368
- Issue date Apr 5, 2011
- Texas Instruments Incorporated
- Xiaoju Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Analog single-poly EEPROM incorporating two tunneling regions for p...
- Patent number 7,813,177
- Issue date Oct 12, 2010
- Texas Instruments Incorporated
- Jozef Czeslaw Mitros
- G11 - INFORMATION STORAGE
Information Patent Grant
Method to detect poly residues in LOCOS process
- Patent number 7,785,906
- Issue date Aug 31, 2010
- Texas Instruments Incorporated
- Xiaoju Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods for reducing capacitor dielectric absorption and voltage co...
- Patent number 7,498,219
- Issue date Mar 3, 2009
- Texas Instruments Incorporated
- Weidong Tian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded EEPROM array techniques for higher density
- Patent number 7,471,570
- Issue date Dec 30, 2008
- Texas Instruments Incorporated
- Alec James Morton
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with reduced cell area
- Patent number 7,396,722
- Issue date Jul 8, 2008
- Texas Instruments Incorporated
- Jozef Mitros
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of performance improvement of HVMOS devices
- Patent number 7,344,947
- Issue date Mar 18, 2008
- Texas Instruments Incorporated
- Victor Ivanov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
EEPROM with etched tunneling window
- Patent number 7,307,309
- Issue date Dec 11, 2007
- Texas Instruments Incorporated
- Pinghai Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with an analog capacitor
- Patent number 7,279,738
- Issue date Oct 9, 2007
- Texas Instruments Incorporated
- Imran M. Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
One time programmable EPROM for advanced CMOS technology
- Patent number 7,253,054
- Issue date Aug 7, 2007
- Texas Instruments Incorporated
- Jozef Czeslaw Mitros
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of an OTP-EPROM having reduced leakage current
- Patent number 7,244,651
- Issue date Jul 17, 2007
- Texas Instruments Incorporated
- Xiaoju Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Drain extended MOS transistors with multiple capacitors and methods...
- Patent number 7,166,903
- Issue date Jan 23, 2007
- Texas Instruments Incorporated
- Jozef Mitros
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Drain extended MOS transistors with multiple capacitors and methods...
- Patent number 7,157,784
- Issue date Jan 2, 2007
- Texas Instruments Incorporated
- Jozef Mitros
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Drain extended MOS transistors with multiple capacitors and methods...
- Patent number 7,060,556
- Issue date Jun 13, 2006
- Texas Instruments Incorporated
- Jozef Mitros
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bird's beak-less or STI-less OTP EPROM
- Patent number 7,045,425
- Issue date May 16, 2006
- Texas Instruments Incorporated
- Jozef Czeslaw Mitros
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a dielectric layer having a getterin...
- Patent number 7,045,418
- Issue date May 16, 2006
- Texas Instruments Incorporated
- Jozef Mitros
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device with reduced cell area
- Patent number 7,019,356
- Issue date Mar 28, 2006
- Texas Instruments Incorporated
- Jozef Mitros
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for forming a semiconductor with an analog capaci...
- Patent number 6,979,615
- Issue date Dec 27, 2005
- Texas Instruments Incorporated
- Imran M. Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low cost fabrication method for high voltage, high drain current MO...
- Patent number 6,930,005
- Issue date Aug 16, 2005
- Texas Instruments Incorporated
- Taylor R. Efland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single poly EEPROM with improved coupling ratio
- Patent number 6,897,113
- Issue date May 24, 2005
- Texas Instruments Incorporated
- Jozef C. Mitros
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS transistors having higher drain current without reduced breakdo...
- Patent number 6,873,021
- Issue date Mar 29, 2005
- Texas Instruments Incorporated
- Jozef C. Mitros
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with improved isolation structures
- Patent number 6,806,541
- Issue date Oct 19, 2004
- Texas Instruments Incorporated
- Lily X. Springer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating low CHC degradation mosfet transistors
- Patent number 6,803,282
- Issue date Oct 12, 2004
- Texas Instruments Incorporated
- Jozef D. Mitros
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single poly eeprom with improved coupling ratio
- Patent number 6,770,933
- Issue date Aug 3, 2004
- Texas Instruments Incorporated
- Jozef C. Mitros
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single poly EEPROM with reduced area
- Patent number 6,747,308
- Issue date Jun 8, 2004
- Texas Instruments Incorporated
- Jozef C. Mitros
- G11 - INFORMATION STORAGE
Information Patent Grant
EEPROM with reduced manufacturing complexity
- Patent number 6,734,491
- Issue date May 11, 2004
- Texas Instruments Deutschland GmbH
- Jozef C. Mitros
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
AREA-EFFICIENT ELECTRICALLY ERASABLE PROGRAMMABLE MEMORY CELL
- Publication number 20120074479
- Publication date Mar 29, 2012
- TEXAS INSTRUMENTS INCORPORATED
- Xiaoju Wu
- G11 - INFORMATION STORAGE
Information Patent Application
AREA-EFFICIENT ELECTRICALLY ERASABLE PROGRAMMABLE MEMORY CELL
- Publication number 20110110160
- Publication date May 12, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Xiaoju Wu
- G11 - INFORMATION STORAGE
Information Patent Application
Area-Efficient Electrically Erasable Programmable Memory Cell
- Publication number 20100302854
- Publication date Dec 2, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Xiaoju Wu
- G11 - INFORMATION STORAGE
Information Patent Application
SINGLE POLY EEPROM ALLOWING CONTINUOUS ADJUSTMENT OF ITS THRESHOLD...
- Publication number 20100177569
- Publication date Jul 15, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Jozef Czeslaw Mitros
- G11 - INFORMATION STORAGE
Information Patent Application
Reduced Area Single Poly EEPROM
- Publication number 20100032744
- Publication date Feb 11, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Jozef C. Mitros
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIMPLE AND EFFECTIVE METHOD TO DETECT POLY RESIDUES IN LOCOS PROCESS
- Publication number 20090153174
- Publication date Jun 18, 2009
- Xiaoju Wu
- G01 - MEASURING TESTING
Information Patent Application
SINGLE POLY EEPROM ALLOWING CONTINUOUS ADJUSTMENT OF ITS THRESHOLD...
- Publication number 20090122614
- Publication date May 14, 2009
- Jozef Czeslaw Mitros
- G11 - INFORMATION STORAGE
Information Patent Application
Single poly EEPROM without separate control gate nor erase regions
- Publication number 20080225593
- Publication date Sep 18, 2008
- Texas Instruments Inc.
- Jozef Czeslaw Mitros
- G11 - INFORMATION STORAGE
Information Patent Application
Methods of performance improvement of HVMOS devices
- Publication number 20070212838
- Publication date Sep 13, 2007
- TEXAS INSTRUMENTS INCORPORATED
- Victor Ivanov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Embedded EEPROM array techniques for higher density
- Publication number 20070064494
- Publication date Mar 22, 2007
- TEXAS INSTRUMENTS INCORPORATED
- Alec James Morton
- G11 - INFORMATION STORAGE
Information Patent Application
One time programmable EPROM for advanced CMOS technology
- Publication number 20060183283
- Publication date Aug 17, 2006
- TEXAS INSTRUMENTS INCORPORATED
- Jozef Czeslaw Mitros
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Drain extended MOS transistors with multiple capacitors and methods...
- Publication number 20060175678
- Publication date Aug 10, 2006
- Jozef Mitros
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Drain extended MOS transistors with multiple capacitors and methods...
- Publication number 20060170055
- Publication date Aug 3, 2006
- TEXAS INSTRUMENTS INCORPORATED
- Jozef Mitros
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory device with reduced cell area
- Publication number 20060124990
- Publication date Jun 15, 2006
- Jozef Mitros
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE WITH REDUCED CELL AREA
- Publication number 20060022258
- Publication date Feb 2, 2006
- TEXAS INSTRUMENTS INCORPORATED
- Jozef Mitros
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bird's beak-less or STI- less OTP EPROM
- Publication number 20060003527
- Publication date Jan 5, 2006
- Jozef Czeslaw Mitros
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
System and method for forming a semiconductor with an analog capaci...
- Publication number 20050221595
- Publication date Oct 6, 2005
- Imran M. Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EEPROM with etched tunneling window
- Publication number 20050194631
- Publication date Sep 8, 2005
- Pinghai Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EEPROM and flash EEPROM
- Publication number 20050145922
- Publication date Jul 7, 2005
- Joseph Farley
- G11 - INFORMATION STORAGE
Information Patent Application
Low cost fabrication method for high voltage, high drain current MO...
- Publication number 20050118753
- Publication date Jun 2, 2005
- Taylor R. Efland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication of an OTP-EPROM having reduced leakage current
- Publication number 20040235246
- Publication date Nov 25, 2004
- Xiaoju Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Single poly EEPROM with improved coupling ratio
- Publication number 20040217415
- Publication date Nov 4, 2004
- Jozef C. Mitros
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for reducing capacitor dielectric absorption and voltage co...
- Publication number 20040209423
- Publication date Oct 21, 2004
- Weidong Tian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device including a dielectric layer having a getterin...
- Publication number 20040178438
- Publication date Sep 16, 2004
- TEXAS INSTRUMENTS INCORPORATED
- Jozef Mitros
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EEPROM with reduced manufacturing complexity
- Publication number 20040175891
- Publication date Sep 9, 2004
- Texas Instruments Deutschland GmbH
- Jozef C. Mitros
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor with improved isolation structures
- Publication number 20040169253
- Publication date Sep 2, 2004
- Lily X. Springer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Single poly EEPROM with improved coupling ratio
- Publication number 20040113198
- Publication date Jun 17, 2004
- TEXAS INSTRUMENTS INCORPORATED
- Jozef C. Mitros
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
System and method for forming a semiconductor with an analog capaci...
- Publication number 20040053455
- Publication date Mar 18, 2004
- TEXAS INSTRUMENTS INCORPORATED
- Imran M. Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Single poly EEPROM with reduced area and method of making same
- Publication number 20030137005
- Publication date Jul 24, 2003
- Jozef C. Mitros
- G11 - INFORMATION STORAGE
Information Patent Application
Higher voltage transistors for sub micron CMOS processes
- Publication number 20030127694
- Publication date Jul 10, 2003
- Alec Morton
- H01 - BASIC ELECTRIC ELEMENTS

Jozef C. Mitros

Person

Patents Grantslast 30 patents

Reduced area single poly EEPROM

Area-efficient electrically erasable programmable memory cell

Area-efficient electrically erasable programmable memory cell

Single poly EEPROM without separate control gate nor erase regions

Area-efficient electrically erasable programmable memory cell

Analog single-poly EEPROM incorporating two tunneling regions for p...

Method to detect poly residues in LOCOS process

Methods for reducing capacitor dielectric absorption and voltage co...

Embedded EEPROM array techniques for higher density

Memory device with reduced cell area

Methods of performance improvement of HVMOS devices

EEPROM with etched tunneling window

Semiconductor device with an analog capacitor

One time programmable EPROM for advanced CMOS technology

Fabrication of an OTP-EPROM having reduced leakage current

Drain extended MOS transistors with multiple capacitors and methods...

Drain extended MOS transistors with multiple capacitors and methods...

Drain extended MOS transistors with multiple capacitors and methods...

Bird's beak-less or STI-less OTP EPROM

Semiconductor device including a dielectric layer having a getterin...

Memory device with reduced cell area

System and method for forming a semiconductor with an analog capaci...

Low cost fabrication method for high voltage, high drain current MO...

Single poly EEPROM with improved coupling ratio

MOS transistors having higher drain current without reduced breakdo...

Field effect transistor with improved isolation structures

Methods for fabricating low CHC degradation mosfet transistors

Single poly eeprom with improved coupling ratio

Single poly EEPROM with reduced area

EEPROM with reduced manufacturing complexity

Patents Applicationslast 30 patents

AREA-EFFICIENT ELECTRICALLY ERASABLE PROGRAMMABLE MEMORY CELL

AREA-EFFICIENT ELECTRICALLY ERASABLE PROGRAMMABLE MEMORY CELL

Area-Efficient Electrically Erasable Programmable Memory Cell

SINGLE POLY EEPROM ALLOWING CONTINUOUS ADJUSTMENT OF ITS THRESHOLD...

Reduced Area Single Poly EEPROM

SIMPLE AND EFFECTIVE METHOD TO DETECT POLY RESIDUES IN LOCOS PROCESS

SINGLE POLY EEPROM ALLOWING CONTINUOUS ADJUSTMENT OF ITS THRESHOLD...

Single poly EEPROM without separate control gate nor erase regions

Methods of performance improvement of HVMOS devices

Embedded EEPROM array techniques for higher density

One time programmable EPROM for advanced CMOS technology

Drain extended MOS transistors with multiple capacitors and methods...

Drain extended MOS transistors with multiple capacitors and methods...

Memory device with reduced cell area

MEMORY DEVICE WITH REDUCED CELL AREA

Bird's beak-less or STI- less OTP EPROM

System and method for forming a semiconductor with an analog capaci...

EEPROM with etched tunneling window

EEPROM and flash EEPROM

Low cost fabrication method for high voltage, high drain current MO...

Fabrication of an OTP-EPROM having reduced leakage current

Single poly EEPROM with improved coupling ratio

Methods for reducing capacitor dielectric absorption and voltage co...

Semiconductor device including a dielectric layer having a getterin...

EEPROM with reduced manufacturing complexity

Field effect transistor with improved isolation structures

Single poly EEPROM with improved coupling ratio

System and method for forming a semiconductor with an analog capaci...

Single poly EEPROM with reduced area and method of making same

Higher voltage transistors for sub micron CMOS processes