Julie A. Tsai

Person

Beaverton, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
LOCOS isolation for fully-depleted SOI devices
- Patent number 7,510,927
- Issue date Mar 31, 2009
- Intel Corporation
- Mark Bohr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device having recessed spacers for improved salicide resistance on...
- Patent number 7,211,872
- Issue date May 1, 2007
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device structure and method for reducing silicide encroachment
- Patent number 6,777,759
- Issue date Aug 17, 2004
- Intel Corporation
- Robert S. Chau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device with recessed thin and thick spacers for improved salicide r...
- Patent number 6,777,760
- Issue date Aug 17, 2004
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device structure and method for reducing silicide encroachment
- Patent number 6,765,273
- Issue date Jul 20, 2004
- Intel Corporation
- Robert S. Chau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device for improved salicide resistance on polysilicon g...
- Patent number 6,593,633
- Issue date Jul 15, 2003
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device having spacers for improved salicide resistance on polysilic...
- Patent number 6,521,964
- Issue date Feb 18, 2003
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device structure and method for reducing silicide encroachment
- Patent number 6,518,155
- Issue date Feb 11, 2003
- Intel Corporation
- Robert S. Chau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device having thin first spacers and partially recessed thick secon...
- Patent number 6,509,618
- Issue date Jan 21, 2003
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of recessing spacers to improved salicide resistance on poly...
- Patent number 6,506,652
- Issue date Jan 14, 2003
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device for improved salicide resistance on polysilicon g...
- Patent number 6,271,096
- Issue date Aug 7, 2001
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device for improved salicide resistance on polysilicon g...
- Patent number 6,268,254
- Issue date Jul 31, 2001
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device for improved salicide resistance on polysilicon g...
- Patent number 6,251,762
- Issue date Jun 26, 2001
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of using thick first spacers to improve salicide resistance...
- Patent number 6,235,598
- Issue date May 22, 2001
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device for improved salicide resistance on polysilicon g...
- Patent number 6,188,117
- Issue date Feb 13, 2001
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Locos isolation for fully-depleted SOI devices
- Publication number 20040124490
- Publication date Jul 1, 2004
- Mark Bohr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A DEVICE WITH THIN SPACERS TO IMPROVE SALICIDE RESISTANCE ON POLYSI...
- Publication number 20020082624
- Publication date Jun 27, 2002
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Device structure and method for reducing silicide encroachment
- Publication number 20020053711
- Publication date May 9, 2002
- Robert S. Chau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A DEVICE HAVING THIN FIRST SPACERS AND PARTIALLY RECESSED THICK SEC...
- Publication number 20020003268
- Publication date Jan 10, 2002
- CHIA-HONG JAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND DEVICE FOR IMPROVED SALICIDE RESISTANCE ON POLYSILICON G...
- Publication number 20010045586
- Publication date Nov 29, 2001
- CHIA-HONG JAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A METHOD OF RECESSING SPACERS TO IMPROVE SALICIDES RESISTANCE ON PO...
- Publication number 20010045607
- Publication date Nov 29, 2001
- CHIA-HONG JAN
- H01 - BASIC ELECTRIC ELEMENTS

Julie A. Tsai

Person

Patents Grantslast 30 patents

LOCOS isolation for fully-depleted SOI devices

Device having recessed spacers for improved salicide resistance on...

Device structure and method for reducing silicide encroachment

Device with recessed thin and thick spacers for improved salicide r...

Device structure and method for reducing silicide encroachment

Method and device for improved salicide resistance on polysilicon g...

Device having spacers for improved salicide resistance on polysilic...

Device structure and method for reducing silicide encroachment

Device having thin first spacers and partially recessed thick secon...

Method of recessing spacers to improved salicide resistance on poly...

Method and device for improved salicide resistance on polysilicon g...

Method and device for improved salicide resistance on polysilicon g...

Method and device for improved salicide resistance on polysilicon g...

Method of using thick first spacers to improve salicide resistance...

Method and device for improved salicide resistance on polysilicon g...

Patents Applicationslast 30 patents

Locos isolation for fully-depleted SOI devices

A DEVICE WITH THIN SPACERS TO IMPROVE SALICIDE RESISTANCE ON POLYSI...

Device structure and method for reducing silicide encroachment

A DEVICE HAVING THIN FIRST SPACERS AND PARTIALLY RECESSED THICK SEC...

METHOD AND DEVICE FOR IMPROVED SALICIDE RESISTANCE ON POLYSILICON G...

A METHOD OF RECESSING SPACERS TO IMPROVE SALICIDES RESISTANCE ON PO...