Jun-ichi Nishizawa

Person

Komegafukuro, Sendai City, Miyagi Pref., JP

People

Patents Grantslast 30 patents

Information Patent Grant
Electromagnetic wave applicator
- Patent number 7,912,553
- Issue date Mar 22, 2011
- Jun-ichi Nishizawa
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
Information Patent Grant
Electromagnetic wave generating device
- Patent number 7,599,409
- Issue date Oct 6, 2009
- Tohoku University
- Jun-ichi Nishizawa
- G02 - OPTICS
Information Patent Grant
Short channel insulated-gate static induction transistor and method...
- Patent number 6,977,406
- Issue date Dec 20, 2005
- National Institute of Information and Communications Technology, Incorporated...
- Toru Kurabayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-speed and high-density semiconductor memory
- Patent number 5,883,406
- Issue date Mar 16, 1999
- Zaidan Hojin Handotai Kenkyu Shinkokai
- Jun-ichi Nishizawa
- G11 - INFORMATION STORAGE
Information Patent Grant
High-speed and high-density semiconductor memory
- Patent number 5,808,328
- Issue date Sep 15, 1998
- Zaidan Hojin Handotai Kenkyu Shinkokai
- Jun-ichi Nishizawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Field effect transistor having saturated drain current characteristic
- Patent number 5,585,654
- Issue date Dec 17, 1996
- Handotai Kenkyu Shinkokai
- Jun-ichi Nishizawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Field effect transistor having unsaturated drain current characteri...
- Patent number 5,557,119
- Issue date Sep 17, 1996
- Handotai Kenkyu Shinkokai
- Jun-ichi Nishizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Short channel mosfet with buried anti-punch through region
- Patent number 5,552,623
- Issue date Sep 3, 1996
- Handotai Kenkyu Shinkokai
- Jun-ichi Nishizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a highspeed static induction transi...
- Patent number 5,532,511
- Issue date Jul 2, 1996
- Research Development Corp. of Japan
- Jun-ichi Nishizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for epitaxially growing a chemical compound crystal
- Patent number 5,525,156
- Issue date Jun 11, 1996
- Research Development Corporation
- Nobuaki Manada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Dry etching method
- Patent number 5,500,079
- Issue date Mar 19, 1996
- Research Development Corporation of Japan
- Jun-ichi Nishizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing same
- Patent number 5,485,017
- Issue date Jan 16, 1996
- Zaidan Hojin Handotai Kenkyu Shinkokai
- Jun-ichi Nishizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Notched insulation gate static induction transistor integrated circuit
- Patent number 5,475,242
- Issue date Dec 12, 1995
- Small Power Communication Systems Research Laboratories Co., Ltd.
- Jun-ichi Nishizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of and apparatus for epitaxially growing chemical compound c...
- Patent number 5,463,977
- Issue date Nov 7, 1995
- Research Development Corporation
- Nobuaki Manada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Insulated gate control static induction thyristor
- Patent number 5,426,314
- Issue date Jun 20, 1995
- Zaidan Hojin Handotai Kenkyu Shinkokai
- Jun-ichi Nishizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Short channel MOSFET with buried anti-punch through region
- Patent number 5,384,476
- Issue date Jan 24, 1995
- Zaidan Hojin Handotai Kenkyu Shinkokai
- Jun-ichi Nishizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of epitaxially growing compound crystal and doping method th...
- Patent number 5,338,389
- Issue date Aug 16, 1994
- Research Development Corporation of Japan
- Jun-ichi Nishizawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
MOS composite static induction thyristor
- Patent number 5,323,028
- Issue date Jun 21, 1994
- Zaidan Hojin Handotai Kenkyu Shinkokai
- Jun-ichi Nishizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Static induction device
- Patent number 5,323,029
- Issue date Jun 21, 1994
- Zaidan Hojin Handotai Kenkyu Shinkokai
- Jun-ichi Nishizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a static induction field-effect transistor
- Patent number 5,296,403
- Issue date Mar 22, 1994
- Research Development Corp. of Japan
- Jun-ichi Nishizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of epitaxially growing semiconductor crystal using light as...
- Patent number 5,254,207
- Issue date Oct 19, 1993
- Research Development Corporation of Japan
- Jun-ichi Nishizawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for growing a GaAs single crystal by pulling from GaAs melt
- Patent number 5,240,685
- Issue date Aug 31, 1993
- Zaidan Hojin Handotai Kenkyu Shinkokai
- Jun-ichi Nishizawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor switching device
- Patent number 5,227,647
- Issue date Jul 13, 1993
- Zaidan Hojin Handotai Kenkyu Shinkokai
- Jun-ichi Nishizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor switching device
- Patent number 5,175,598
- Issue date Dec 29, 1992
- Zaidan Hojin Handotai Kenkyu Shinkokai
- Jun-ichi Nishizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing step cut type insulated gate SIT having low...
- Patent number 5,169,795
- Issue date Dec 8, 1992
- Small Power Communication Systems Research Laboratories Co., Ltd.
- Jun-ichi Nishizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photoelectric converting device with accumulating gate region
- Patent number 5,065,206
- Issue date Nov 12, 1991
- Nikon Corporation
- Jun-Ichi Nishizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Step cut type insulated gate SIT having low-resistance electrode an...
- Patent number 5,060,029
- Issue date Oct 22, 1991
- Small Power Communication Systems Research Laboratories Co., Ltd.
- Jun-ichi Nishizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated-gate type transistor and semiconductor integrated circuit...
- Patent number 5,038,188
- Issue date Aug 6, 1991
- Zaidan Hojin Handotai Kenkyu Shinkokai
- Jun-ichi Nishizawa
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Double gate static induction thyristor
- Patent number 5,027,180
- Issue date Jun 25, 1991
- Mitsubishi Electric Corporation
- Jun-ichi Nishizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PWM power converter using mixed bipolar and static induction transi...
- Patent number 5,021,936
- Issue date Jun 4, 1991
- Zaidan Hojin Handotai Kenkyu Sinkokai
- Jun-ichi Nishizawa
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER

Patents Applicationslast 30 patents

Information Patent Application
Electromagnetic wave generating device
- Publication number 20070160093
- Publication date Jul 12, 2007
- Zaidan Hojin Handotai Kenkyu Shinkokai
- Jun-ichi Nishizawa
- G02 - OPTICS
Information Patent Application
Electromagnetic wave applicator
- Publication number 20060113298
- Publication date Jun 1, 2006
- Zaidan Hojin Handotai Kenkyu Shinkokai
- Jun-ichi Nishizawa
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
Information Patent Application
Short channel insulated-gate static induction transistor and method...
- Publication number 20060054940
- Publication date Mar 16, 2006
- National Institute of Information and Communications Technology,
- Toru Kurabayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Short channel insulated-gate static induction transistor and method...
- Publication number 20040178442
- Publication date Sep 16, 2004
- Toru Kurabayashi
- H01 - BASIC ELECTRIC ELEMENTS

Jun-ichi Nishizawa

Person

Patents Grantslast 30 patents

Electromagnetic wave applicator

Electromagnetic wave generating device

Short channel insulated-gate static induction transistor and method...

High-speed and high-density semiconductor memory

High-speed and high-density semiconductor memory

Field effect transistor having saturated drain current characteristic

Field effect transistor having unsaturated drain current characteri...

Short channel mosfet with buried anti-punch through region

Semiconductor device comprising a highspeed static induction transi...

Apparatus for epitaxially growing a chemical compound crystal

Dry etching method

Semiconductor device and method of manufacturing same

Notched insulation gate static induction transistor integrated circuit

Method of and apparatus for epitaxially growing chemical compound c...

Insulated gate control static induction thyristor

Short channel MOSFET with buried anti-punch through region

Method of epitaxially growing compound crystal and doping method th...

MOS composite static induction thyristor

Static induction device

Method of manufacturing a static induction field-effect transistor

Method of epitaxially growing semiconductor crystal using light as...

Apparatus for growing a GaAs single crystal by pulling from GaAs melt

Semiconductor switching device

Semiconductor switching device

Method of manufacturing step cut type insulated gate SIT having low...

Photoelectric converting device with accumulating gate region

Step cut type insulated gate SIT having low-resistance electrode an...

Insulated-gate type transistor and semiconductor integrated circuit...

Double gate static induction thyristor

PWM power converter using mixed bipolar and static induction transi...

Patents Applicationslast 30 patents

Electromagnetic wave generating device

Electromagnetic wave applicator

Short channel insulated-gate static induction transistor and method...

Short channel insulated-gate static induction transistor and method...