Jun SAKAKIBARA

Person

Nagoya-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method for manufacturing silicon carbide semiconductor device
- Patent number 9,954,073
- Issue date Apr 24, 2018
- Denso Corporation
- Nozomu Akagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having switching element and free wheel diode...
- Patent number 9,515,067
- Issue date Dec 6, 2016
- Denso Corporation
- Hirotaka Saikaku
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Semiconductor device having switching element and free wheel diode...
- Patent number 8,890,252
- Issue date Nov 18, 2014
- Denso Corporation
- Hirotaka Saikaku
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Semiconductor device including schottky barrier diode and method of...
- Patent number 7,968,953
- Issue date Jun 28, 2011
- Denso Corporation
- Jun Sakakibara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having super junction MOS transistor and metho...
- Patent number 7,928,470
- Issue date Apr 19, 2011
- Denso Corporation
- Hitoshi Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having super junction
- Patent number 7,859,048
- Issue date Dec 28, 2010
- Denso Corporation
- Yuma Kagata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having p-n column portion
- Patent number 7,838,995
- Issue date Nov 23, 2010
- Denso Corporation
- Yasushi Urakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 7,564,095
- Issue date Jul 21, 2009
- Denso Corporation
- Yasushi Urakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 7,553,722
- Issue date Jun 30, 2009
- Denso Corporation
- Jun Sakakibara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontal MOS transistor
- Patent number 6,972,458
- Issue date Dec 6, 2005
- Denso Corporation
- Naohiro Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having high breakdown voltage without increase...
- Patent number 6,867,456
- Issue date Mar 15, 2005
- Denso Corporation
- Jun Sakakibara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having epitaxially-filled trench and method fo...
- Patent number 6,836,001
- Issue date Dec 28, 2004
- Denso Corporation
- Shoichi Yamauchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device having trench filled u...
- Patent number 6,696,323
- Issue date Feb 24, 2004
- Denso Corporation
- Hitoshi Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing semiconductor device
- Patent number 6,670,673
- Issue date Dec 30, 2003
- Denso Corporation
- Jun Sakakibara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having resistive element
- Patent number 6,570,239
- Issue date May 27, 2003
- Denso Corporation
- Jun Sakakibara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having trench filled up with gate electrode
- Patent number 6,525,375
- Issue date Feb 25, 2003
- Denso Corporation
- Hitoshi Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor substrate
- Patent number 6,191,007
- Issue date Feb 20, 2001
- Denso Corporation
- Masaki Matsui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit device and manufacturing method fo...
- Patent number 5,869,872
- Issue date Feb 9, 1999
- Nippondenso Co., Ltd.
- Akiyoshi Asai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit device
- Patent number 5,751,041
- Issue date May 12, 1998
- Denso Corporataion
- Megumi Suzuki
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20170012109
- Publication date Jan 12, 2017
- Denso Corporation
- Nozomu AKAGI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20170012108
- Publication date Jan 12, 2017
- DENSO CORPORATION
- Jun SAKAKIBARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...
- Publication number 20160133741
- Publication date May 12, 2016
- Toyota Jidosha Kabushiki Kaisha
- Hideo MATSUKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING SWITCHING ELEMENT AND FREE WHEEL DIODE...
- Publication number 20150041850
- Publication date Feb 12, 2015
- DENSO CORPORATION
- Hirotaka Saikaku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING SWITCHING ELEMENT AND FREE WHEEL DIODE...
- Publication number 20120025874
- Publication date Feb 2, 2012
- DENSO CORPORATION
- Hirotaka Saikaku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having super junction
- Publication number 20090321819
- Publication date Dec 31, 2009
- DENSO CORPORATION
- Yuma Kagata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Seminconductor device having P-N column portion
- Publication number 20090032965
- Publication date Feb 5, 2009
- DENSO CORPORATION
- Yasushi Urakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device including schottky barrier diode and method of...
- Publication number 20080246096
- Publication date Oct 9, 2008
- DENSO CORPORATION
- Jun Sakakibara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having super junction MOS transistor and metho...
- Publication number 20070120201
- Publication date May 31, 2007
- DENSO CORPORATION
- Hitoshi Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for manufacturing the same
- Publication number 20060286751
- Publication date Dec 21, 2006
- DENSO CORPORATION
- Yasushi Urakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for manufacturing the same
- Publication number 20060275980
- Publication date Dec 7, 2006
- DENSO CORPORATION
- Jun Sakakibara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20050230747
- Publication date Oct 20, 2005
- DENSO Corporation
- Naohiro Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having epitaxially-filled trench and method fo...
- Publication number 20050045996
- Publication date Mar 3, 2005
- Shoichi Yamauchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20040119091
- Publication date Jun 24, 2004
- DENSO Corporation
- Naohiro Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having high breakdown voltage without increase...
- Publication number 20040089896
- Publication date May 13, 2004
- Jun Sakakibara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having epitaxially-filled trench and method fo...
- Publication number 20030219933
- Publication date Nov 27, 2003
- Shoichi Yamauchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing semiconductor device having trench filled u...
- Publication number 20030141514
- Publication date Jul 31, 2003
- Hitoshi Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for manufacturing semiconductor device
- Publication number 20020155685
- Publication date Oct 24, 2002
- Jun Sakakibara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having resistive element
- Publication number 20010022385
- Publication date Sep 20, 2001
- Jun Sakakibara
- H01 - BASIC ELECTRIC ELEMENTS

Jun SAKAKIBARA

Person

Patents Grantslast 30 patents

Method for manufacturing silicon carbide semiconductor device

Semiconductor device having switching element and free wheel diode...

Semiconductor device having switching element and free wheel diode...

Semiconductor device including schottky barrier diode and method of...

Semiconductor device having super junction MOS transistor and metho...

Semiconductor device having super junction

Semiconductor device having p-n column portion

Semiconductor device and method for manufacturing the same

Semiconductor device and method for manufacturing the same

Horizontal MOS transistor

Semiconductor device having high breakdown voltage without increase...

Semiconductor device having epitaxially-filled trench and method fo...

Method of manufacturing semiconductor device having trench filled u...

Semiconductor device and method for manufacturing semiconductor device

Semiconductor device having resistive element

Semiconductor device having trench filled up with gate electrode

Method for manufacturing a semiconductor substrate

Semiconductor integrated circuit device and manufacturing method fo...

Semiconductor integrated circuit device

Patents Applicationslast 30 patents

METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...

SEMICONDUCTOR DEVICE HAVING SWITCHING ELEMENT AND FREE WHEEL DIODE...

SEMICONDUCTOR DEVICE HAVING SWITCHING ELEMENT AND FREE WHEEL DIODE...

Semiconductor device having super junction

Seminconductor device having P-N column portion

Semiconductor device including schottky barrier diode and method of...

Semiconductor device having super junction MOS transistor and metho...

Semiconductor device and method for manufacturing the same

Semiconductor device and method for manufacturing the same

Semiconductor device

Semiconductor device having epitaxially-filled trench and method fo...

Semiconductor device and method of manufacturing the same

Semiconductor device having high breakdown voltage without increase...

Semiconductor device having epitaxially-filled trench and method fo...

Method of manufacturing semiconductor device having trench filled u...

Semiconductor device and method for manufacturing semiconductor device

Semiconductor device having resistive element