JUNG HAN

Person

WOODBRIDGE, CT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method for a GaN vertical microcavity surface emitting laser (VCSEL)
- Patent number 11,095,096
- Issue date Aug 17, 2021
- Yale University
- Jung Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for GaN vertical microcavity surface emitting laser (VCSEL)
- Patent number 11,043,792
- Issue date Jun 22, 2021
- Yale University
- Jung Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to make buried, highly conductive p-type III-nitride layers
- Patent number 11,018,231
- Issue date May 25, 2021
- Yale University
- Jung Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacking fault-free semipolar and nonpolar GaN grown on foreign sub...
- Patent number 10,896,818
- Issue date Jan 19, 2021
- Yale University
- Jung Han
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semipolar or nonpolar group III-nitride substrates
- Patent number 10,892,159
- Issue date Jan 12, 2021
- Saphlux, Inc.
- Jie Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device concerning III-nitride edge emitting laser diode...
- Patent number 10,554,017
- Issue date Feb 4, 2020
- Yale University
- Jung Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductivity based on selective etch for GaN devices and applicatio...
- Patent number 10,458,038
- Issue date Oct 29, 2019
- Yale University
- Yu Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterogeneous material integration through guided lateral growth
- Patent number 10,435,812
- Issue date Oct 8, 2019
- Yale University
- Jung Han
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of obtaining planar semipolar gallium nitride surfaces
- Patent number 9,978,845
- Issue date May 22, 2018
- Yale University
- Jung Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitrogen-polar semipolar and gallium-polar semipolar GaN layers and...
- Patent number 9,978,589
- Issue date May 22, 2018
- Yale University
- Jung Han
- C30 - CRYSTAL GROWTH
Information Patent Grant
Large-area, laterally-grown epitaxial semiconductor layers
- Patent number 9,711,352
- Issue date Jul 18, 2017
- Yale University
- Jung Han
- C30 - CRYSTAL GROWTH
Information Patent Grant
Lateral electrochemical etching of III-nitride materials for microf...
- Patent number 9,583,353
- Issue date Feb 28, 2017
- Yale University
- Jung Han
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Conductivity based on selective etch for GaN devices and applicatio...
- Patent number 9,206,524
- Issue date Dec 8, 2015
- Yale University
- Yu Zhang
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Epitaxial growth of aligned AlGalnN nanowires by metal-organic chem...
- Patent number 7,407,872
- Issue date Aug 5, 2008
- Yale University
- Jung Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlled growth of gallium nitride nanostructures
- Patent number 7,258,807
- Issue date Aug 21, 2007
- Yale University
- Lisa Pfefferle
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Distributed bragg reflector using AIGaN/GaN
- Patent number 6,775,314
- Issue date Aug 10, 2004
- Sandia Corporation
- Karen E. Waldrip
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
IN-SITU AND SELECTIVE AREA ETCHING OF SURFACES OR LAYERS, AND HIGH-...
- Publication number 20220356602
- Publication date Nov 10, 2022
- Yale University
- Jung HAN
- C30 - CRYSTAL GROWTH
Information Patent Application
NANOPOROUS MICRO-LED DEVICES AND METHODS FOR MAKING
- Publication number 20200152841
- Publication date May 14, 2020
- Yale University
- Jung Han
- B82 - NANO-TECHNOLOGY
Information Patent Application
STACKING FAULT-FREE SEMIPOLAR AND NONPOLAR GAN GROWN ON FOREIGN SUB...
- Publication number 20190228969
- Publication date Jul 25, 2019
- Yale University
- Jung Han
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
STACKING-FAULT-FREE SEMIPOLAR OR NONPOLAR GROUP III-NITRIDE SUBSTRATES
- Publication number 20190157068
- Publication date May 23, 2019
- Saphlux, Inc.
- Jie Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMIPOLAR AMD NONPOLAR LIGHT-EMITTING DEVICES
- Publication number 20190157069
- Publication date May 23, 2019
- Saphlux, Inc.
- Jie Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A METHOD AND DEVICE CONCERNING III-NITRIDE EDGE EMITTING LASER DIOD...
- Publication number 20180152003
- Publication date May 31, 2018
- Yale University
- Jung Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A METHOD FOR GAN VERTICAL MICROCAVITY SURFACE EMITTING LASER (VCSEL)
- Publication number 20170237234
- Publication date Aug 17, 2017
- Yale University
- Jung Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL ELECTROCHEMICAL ETCHING OF III-NITRIDE MATERIALS FOR MICROF...
- Publication number 20170133826
- Publication date May 11, 2017
- Yale University
- JUNG HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITROGEN-POLAR SEMIPOLAR GAN LAYERS AND DEVICES ON SAPPHIRE SUBSTRATES
- Publication number 20170047220
- Publication date Feb 16, 2017
- Yale University
- Jung Han
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF OBTAINING PLANAR SEMIPOLAR GALLIUM NITRIDE SURFACES
- Publication number 20170033186
- Publication date Feb 2, 2017
- Yale University
- Jung Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO MAKE BURIED, HIGHLY CONDUCTIVE P-TYPE III-NITRIDE LAYERS
- Publication number 20160197151
- Publication date Jul 7, 2016
- Yale University
- Jung Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTIVITY BASED ON SELECTIVE ETCH FOR GAN DEVICES AND APPLICATIO...
- Publication number 20160153113
- Publication date Jun 2, 2016
- Yale University
- Yu Zhang
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
LARGE-AREA, LATERALLY-GROWN EPITAXIAL SEMICONDUCTOR LAYERS
- Publication number 20160027636
- Publication date Jan 28, 2016
- Yale University
- Jung HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROGENEOUS MATERIAL INTEGRATION THROUGH GUIDED LATERAL GROWTH
- Publication number 20160017515
- Publication date Jan 21, 2016
- Yale University
- Jung Han
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR A GAN VERTICAL MICROCAVITY SURFACE EMITTING LASER (VCSEL)
- Publication number 20150303655
- Publication date Oct 22, 2015
- Yale University
- Jung Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL ELECTROCHEMICAL ETCHING OF III-NITRIDE MATERIALS FOR MICROF...
- Publication number 20140003458
- Publication date Jan 2, 2014
- Jung Han
- B82 - NANO-TECHNOLOGY
Information Patent Application
Conductivity Based on Selective Etch for GaN Devices and Applicatio...
- Publication number 20130011656
- Publication date Jan 10, 2013
- Yale University
- Yu Zhang
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
Controlled growth of gallium nitride nanostructures
- Publication number 20070281481
- Publication date Dec 6, 2007
- Yale University
- Lisa Pfefferle
- C30 - CRYSTAL GROWTH
Information Patent Application
Epitaxial growth of aligned algainn nanowires by metal-organic chem...
- Publication number 20060073680
- Publication date Apr 6, 2006
- Jung Han
- B82 - NANO-TECHNOLOGY
Information Patent Application
Controlled growth of gallium nitride nanostructures
- Publication number 20050176249
- Publication date Aug 11, 2005
- Lisa Pfefferle
- C30 - CRYSTAL GROWTH

Person

Patents Grantslast 30 patents

Method for a GaN vertical microcavity surface emitting laser (VCSEL)

Method for GaN vertical microcavity surface emitting laser (VCSEL)

Method to make buried, highly conductive p-type III-nitride layers

Stacking fault-free semipolar and nonpolar GaN grown on foreign sub...

Semipolar or nonpolar group III-nitride substrates

Method and device concerning III-nitride edge emitting laser diode...

Conductivity based on selective etch for GaN devices and applicatio...

Heterogeneous material integration through guided lateral growth

Method of obtaining planar semipolar gallium nitride surfaces

Nitrogen-polar semipolar and gallium-polar semipolar GaN layers and...

Large-area, laterally-grown epitaxial semiconductor layers

Lateral electrochemical etching of III-nitride materials for microf...

Conductivity based on selective etch for GaN devices and applicatio...

Epitaxial growth of aligned AlGalnN nanowires by metal-organic chem...

Controlled growth of gallium nitride nanostructures

Distributed bragg reflector using AIGaN/GaN

Patents Applicationslast 30 patents

IN-SITU AND SELECTIVE AREA ETCHING OF SURFACES OR LAYERS, AND HIGH-...

NANOPOROUS MICRO-LED DEVICES AND METHODS FOR MAKING

STACKING FAULT-FREE SEMIPOLAR AND NONPOLAR GAN GROWN ON FOREIGN SUB...

STACKING-FAULT-FREE SEMIPOLAR OR NONPOLAR GROUP III-NITRIDE SUBSTRATES

SEMIPOLAR AMD NONPOLAR LIGHT-EMITTING DEVICES

A METHOD AND DEVICE CONCERNING III-NITRIDE EDGE EMITTING LASER DIOD...

A METHOD FOR GAN VERTICAL MICROCAVITY SURFACE EMITTING LASER (VCSEL)

LATERAL ELECTROCHEMICAL ETCHING OF III-NITRIDE MATERIALS FOR MICROF...

NITROGEN-POLAR SEMIPOLAR GAN LAYERS AND DEVICES ON SAPPHIRE SUBSTRATES

METHOD OF OBTAINING PLANAR SEMIPOLAR GALLIUM NITRIDE SURFACES

METHOD TO MAKE BURIED, HIGHLY CONDUCTIVE P-TYPE III-NITRIDE LAYERS

CONDUCTIVITY BASED ON SELECTIVE ETCH FOR GAN DEVICES AND APPLICATIO...

LARGE-AREA, LATERALLY-GROWN EPITAXIAL SEMICONDUCTOR LAYERS

HETEROGENEOUS MATERIAL INTEGRATION THROUGH GUIDED LATERAL GROWTH

METHOD FOR A GAN VERTICAL MICROCAVITY SURFACE EMITTING LASER (VCSEL)

LATERAL ELECTROCHEMICAL ETCHING OF III-NITRIDE MATERIALS FOR MICROF...

Conductivity Based on Selective Etch for GaN Devices and Applicatio...

Controlled growth of gallium nitride nanostructures

Epitaxial growth of aligned algainn nanowires by metal-organic chem...

Controlled growth of gallium nitride nanostructures