Justin K. Brask

Person

Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Gate electrode having a capping layer
- Patent number 11,031,482
- Issue date Jun 8, 2021
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating transistor with thinned channel
- Patent number 10,937,907
- Issue date Mar 2, 2021
- Intel Corporation
- Justin K. Brask
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate electrode having a capping layer
- Patent number 10,707,319
- Issue date Jul 7, 2020
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating transistor with thinned channel
- Patent number 10,367,093
- Issue date Jul 30, 2019
- Justin K. Brask
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Nonplanar device with thinned lower body portion and method of fabr...
- Patent number 10,236,356
- Issue date Mar 19, 2019
- Intel Corporation
- Uday Shah
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Extreme high mobility CMOS logic
- Patent number 10,141,437
- Issue date Nov 27, 2018
- Intel Corporation
- Suman Datta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with narrow bandgap source and drain region...
- Patent number 10,121,897
- Issue date Nov 6, 2018
- Intel Corporation
- Robert S. Chau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating transistor with thinned channel
- Patent number 9,806,195
- Issue date Oct 31, 2017
- Intel Corporation
- Justin K. Brask
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Semiconductor device structures and methods of forming semiconducto...
- Patent number 9,761,724
- Issue date Sep 12, 2017
- Intel Corporation
- Justin K. Brask
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with narrow bandgap source and drain region...
- Patent number 9,748,391
- Issue date Aug 29, 2017
- Intel Corporation
- Robert S. Chau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonplanar device with thinned lower body portion and method of fabr...
- Patent number 9,741,809
- Issue date Aug 22, 2017
- Intel Corporation
- Uday Shah
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extreme high mobility CMOS logic
- Patent number 9,691,856
- Issue date Jun 27, 2017
- Intel Corporation
- Suman Datta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with narrow bandgap source and drain region...
- Patent number 9,614,083
- Issue date Apr 4, 2017
- Intel Corporation
- Robert S. Chau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extreme high mobility CMOS logic
- Patent number 9,548,363
- Issue date Jan 17, 2017
- Intel Corporation
- Suman Datta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structures and methods of forming semiconducto...
- Patent number 9,385,180
- Issue date Jul 5, 2016
- Intel Corporation
- Justin K. Brask
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with narrow bandgap source and drain region...
- Patent number 9,368,583
- Issue date Jun 14, 2016
- Intel Corporation
- Robert S. Chau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating transistor with thinned channel
- Patent number 9,337,307
- Issue date May 10, 2016
- Intel Corporation
- Justin K. Brask
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate electrode having a capping layer
- Patent number 9,287,380
- Issue date Mar 15, 2016
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonplanar device with thinned lower body portion and method of fabr...
- Patent number 9,190,518
- Issue date Nov 17, 2015
- Intel Corporation
- Uday Shah
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Field effect transistor with narrow bandgap source and drain region...
- Patent number 9,048,314
- Issue date Jun 2, 2015
- Intel Corporation
- Robert S. Chau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structures and methods of forming semiconducto...
- Patent number 8,933,458
- Issue date Jan 13, 2015
- Intel Corporation
- Justin K. Brask
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with narrow bandgap source and drain region...
- Patent number 8,816,394
- Issue date Aug 26, 2014
- Intel Corporation
- Robert S. Chau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extreme high mobility CMOS logic
- Patent number 8,802,517
- Issue date Aug 12, 2014
- Intel Corporation
- Suman Datta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate electrode having a capping layer
- Patent number 8,803,255
- Issue date Aug 12, 2014
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonplanar device with thinned lower body portion and method of fabr...
- Patent number 8,749,026
- Issue date Jun 10, 2014
- Intel Corporation
- Uday Shah
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Field effect transistor with narrow bandgap source and drain region...
- Patent number 8,664,694
- Issue date Mar 4, 2014
- Intel Corporation
- Robert S. Chau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structures and methods of forming semiconducto...
- Patent number 8,581,258
- Issue date Nov 12, 2013
- Intel Corporation
- Justin K. Brask
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extreme high mobility CMOS logic
- Patent number 8,518,768
- Issue date Aug 27, 2013
- Intel Corporation
- Suman Datta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonplanar device with thinned lower body portion and method of fabr...
- Patent number 8,502,351
- Issue date Aug 6, 2013
- Intel Corporation
- Uday Shah
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Gate electrode having a capping layer
- Patent number 8,390,082
- Issue date Mar 5, 2013
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GATE ELECTRODE HAVING A CAPPING LAYER
- Publication number 20210265482
- Publication date Aug 26, 2021
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ELECTRODE HAVING A CAPPING LAYER
- Publication number 20210242325
- Publication date Aug 5, 2021
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING TRANSISTOR WITH THINNED CHANNEL
- Publication number 20210135007
- Publication date May 6, 2021
- Intel Corporation
- Justin K. Brask
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ELECTRODE HAVING A CAPPING LAYER
- Publication number 20200295153
- Publication date Sep 17, 2020
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING TRANSISTOR WITH THINNED CHANNEL
- Publication number 20190371940
- Publication date Dec 5, 2019
- Intel Corporation
- Justin K. Brask
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
METHOD FOR FABRICATING TRANSISTOR WITH THINNED CHANNEL
- Publication number 20180047846
- Publication date Feb 15, 2018
- Intel Corporation
- Justin K. Brask
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONPLANAR DEVICE WITH THINNED LOWER BODY PORTION AND METHOD OF FABR...
- Publication number 20170365677
- Publication date Dec 21, 2017
- Intel Corporation
- Uday SHAH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH NARROW BANDGAP SOURCE AND DRAIN REGION...
- Publication number 20170323972
- Publication date Nov 9, 2017
- Intel Corporation
- Robert S. Chau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTREME HIGH MOBILITY CMOS LOGIC
- Publication number 20170309734
- Publication date Oct 26, 2017
- Intel Corporation
- Suman DATTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH NARROW BANDGAP SOURCE AND DRAIN REGION...
- Publication number 20170170318
- Publication date Jun 15, 2017
- Intel Corporation
- Robert S. Chau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF CHANNEL WRAPAROUND GATE STRUCTURE FOR FIELD-EFFECT T...
- Publication number 20160308014
- Publication date Oct 20, 2016
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURES AND METHODS OF FORMING SEMICONDUCTO...
- Publication number 20160293765
- Publication date Oct 6, 2016
- Justin K. Brask
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH NARROW BANDGAP SOURCE AND DRAIN REGION...
- Publication number 20160284847
- Publication date Sep 29, 2016
- Intel Corporation
- Robert S. Chau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ELECTRODE HAVING A CAPPING LAYER
- Publication number 20160197159
- Publication date Jul 7, 2016
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING TRANSISTOR WITH THINNED CHANNEL
- Publication number 20160197185
- Publication date Jul 7, 2016
- Intel Corporation
- Justin K. Brask
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTREME HIGH MOBILITY CMOS LOGIC
- Publication number 20160111423
- Publication date Apr 21, 2016
- Intel Corporation
- Suman Datta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONPLANAR DEVICE WITH THINNED LOWER BODY PORTION AND METHOD OF FABR...
- Publication number 20160005829
- Publication date Jan 7, 2016
- Intel Corporation
- Uday Shah
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH NARROW BANDGAP SOURCE AND DRAIN REGION...
- Publication number 20150236100
- Publication date Aug 20, 2015
- Intel Corporation
- Robert S. Chau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURES AND METHODS OF FORMING SEMICONDUCTO...
- Publication number 20150102429
- Publication date Apr 16, 2015
- Justin K. Brask
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH NARROW BANDGAP SOURCE AND DRAIN REGION...
- Publication number 20140361363
- Publication date Dec 11, 2014
- Robert S. Chau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTREME HIGH MOBILITY CMOS LOGIC
- Publication number 20140291615
- Publication date Oct 2, 2014
- Suman Datta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONPLANAR DEVICE WITH THINNED LOWER BODY PORTION AND METHOD OF FABR...
- Publication number 20140239358
- Publication date Aug 28, 2014
- Uday Shah
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ELECTRODE HAVING A CAPPING LAYER
- Publication number 20140103458
- Publication date Apr 17, 2014
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH NARROW BANDGAP SOURCE AND DRAIN REGION...
- Publication number 20140103456
- Publication date Apr 17, 2014
- Robert S. Chau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURES AND METHODS OF FORMING SEMICONDUCTO...
- Publication number 20140035009
- Publication date Feb 6, 2014
- Justin K. Brask
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTREME HIGH MOBILITY CMOS LOGIC
- Publication number 20130328015
- Publication date Dec 12, 2013
- Suman Datta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONPLANAR DEVICE WITH THINNED LOWER BODY PORTION AND METHOD OF FABR...
- Publication number 20130264642
- Publication date Oct 10, 2013
- Uday Shah
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ELECTRODE HAVING A CAPPING LAYER
- Publication number 20130161766
- Publication date Jun 27, 2013
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH NARROW BANDGAP SOURCE AND DRAIN REGION...
- Publication number 20130146945
- Publication date Jun 13, 2013
- Robert S. Chau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH NARROW BANDGAP SOURCE AND DRAIN REGION...
- Publication number 20120205729
- Publication date Aug 16, 2012
- Robert S. Chau
- H01 - BASIC ELECTRIC ELEMENTS

Justin K. Brask

Person

Patents Grantslast 30 patents

Gate electrode having a capping layer

Method for fabricating transistor with thinned channel

Gate electrode having a capping layer

Method for fabricating transistor with thinned channel

Nonplanar device with thinned lower body portion and method of fabr...

Extreme high mobility CMOS logic

Field effect transistor with narrow bandgap source and drain region...

Method for fabricating transistor with thinned channel

Semiconductor device structures and methods of forming semiconducto...

Field effect transistor with narrow bandgap source and drain region...

Nonplanar device with thinned lower body portion and method of fabr...

Extreme high mobility CMOS logic

Field effect transistor with narrow bandgap source and drain region...

Extreme high mobility CMOS logic

Semiconductor device structures and methods of forming semiconducto...

Field effect transistor with narrow bandgap source and drain region...

Method for fabricating transistor with thinned channel

Gate electrode having a capping layer

Nonplanar device with thinned lower body portion and method of fabr...

Field effect transistor with narrow bandgap source and drain region...

Semiconductor device structures and methods of forming semiconducto...

Field effect transistor with narrow bandgap source and drain region...

Extreme high mobility CMOS logic

Gate electrode having a capping layer

Nonplanar device with thinned lower body portion and method of fabr...

Field effect transistor with narrow bandgap source and drain region...

Semiconductor device structures and methods of forming semiconducto...

Extreme high mobility CMOS logic

Nonplanar device with thinned lower body portion and method of fabr...

Gate electrode having a capping layer

Patents Applicationslast 30 patents

GATE ELECTRODE HAVING A CAPPING LAYER

GATE ELECTRODE HAVING A CAPPING LAYER

METHOD FOR FABRICATING TRANSISTOR WITH THINNED CHANNEL

GATE ELECTRODE HAVING A CAPPING LAYER

METHOD FOR FABRICATING TRANSISTOR WITH THINNED CHANNEL

METHOD FOR FABRICATING TRANSISTOR WITH THINNED CHANNEL

NONPLANAR DEVICE WITH THINNED LOWER BODY PORTION AND METHOD OF FABR...

FIELD EFFECT TRANSISTOR WITH NARROW BANDGAP SOURCE AND DRAIN REGION...

EXTREME HIGH MOBILITY CMOS LOGIC

FIELD EFFECT TRANSISTOR WITH NARROW BANDGAP SOURCE AND DRAIN REGION...

FABRICATION OF CHANNEL WRAPAROUND GATE STRUCTURE FOR FIELD-EFFECT T...

SEMICONDUCTOR DEVICE STRUCTURES AND METHODS OF FORMING SEMICONDUCTO...

FIELD EFFECT TRANSISTOR WITH NARROW BANDGAP SOURCE AND DRAIN REGION...

GATE ELECTRODE HAVING A CAPPING LAYER

METHOD FOR FABRICATING TRANSISTOR WITH THINNED CHANNEL

EXTREME HIGH MOBILITY CMOS LOGIC

NONPLANAR DEVICE WITH THINNED LOWER BODY PORTION AND METHOD OF FABR...

FIELD EFFECT TRANSISTOR WITH NARROW BANDGAP SOURCE AND DRAIN REGION...

SEMICONDUCTOR DEVICE STRUCTURES AND METHODS OF FORMING SEMICONDUCTO...

FIELD EFFECT TRANSISTOR WITH NARROW BANDGAP SOURCE AND DRAIN REGION...

EXTREME HIGH MOBILITY CMOS LOGIC

NONPLANAR DEVICE WITH THINNED LOWER BODY PORTION AND METHOD OF FABR...

GATE ELECTRODE HAVING A CAPPING LAYER

FIELD EFFECT TRANSISTOR WITH NARROW BANDGAP SOURCE AND DRAIN REGION...

SEMICONDUCTOR DEVICE STRUCTURES AND METHODS OF FORMING SEMICONDUCTO...

EXTREME HIGH MOBILITY CMOS LOGIC

NONPLANAR DEVICE WITH THINNED LOWER BODY PORTION AND METHOD OF FABR...

GATE ELECTRODE HAVING A CAPPING LAYER

FIELD EFFECT TRANSISTOR WITH NARROW BANDGAP SOURCE AND DRAIN REGION...

FIELD EFFECT TRANSISTOR WITH NARROW BANDGAP SOURCE AND DRAIN REGION...