Kaizad R. Mistry

Person

Lake Dswego, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Wafer level passive heat spreader interposer to enable improved the...
- Patent number 11,804,470
- Issue date Oct 31, 2023
- Intel Corporation
- Xavier F. Brun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor transistor having a stressed channel
- Patent number 9,735,270
- Issue date Aug 15, 2017
- Intel Corporation
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor transistor having a stressed channel
- Patent number 9,490,364
- Issue date Nov 8, 2016
- Intel Corporation
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Copper-filled trench contact for transistor performance improvement
- Patent number 8,766,372
- Issue date Jul 1, 2014
- Intel Corporation
- Kelin J. Kuhn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Copper-filled trench contact for transistor performance improvement
- Patent number 8,258,057
- Issue date Sep 4, 2012
- Intel Corporation
- Kelin J. Kuhn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating MOSFET transistors with multiple threshold vo...
- Patent number 6,979,609
- Issue date Dec 27, 2005
- Intel Corporation
- Ian R. Post
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor structure with self-aligned raised source/d...
- Patent number 6,956,263
- Issue date Oct 18, 2005
- Intel Corporation
- Kaizad R. Mistry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor transistor having a stressed channel
- Patent number 6,885,084
- Issue date Apr 26, 2005
- Intel Corporation
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor transistor having a stressed channel
- Patent number 6,861,318
- Issue date Mar 1, 2005
- Intel Corporation
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating dual threshold voltage n-channel and p-channe...
- Patent number 6,803,285
- Issue date Oct 12, 2004
- Intel Corporation
- Kaizad R. Mistry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating MOSFET transistors with multiple threshold vo...
- Patent number 6,717,221
- Issue date Apr 6, 2004
- Intel Corporation
- Ian R. Post
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor structure with self-aligned raised source/d...
- Patent number 6,716,046
- Issue date Apr 6, 2004
- Intel Corporation
- Kaizad R. Mistry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating dual threshold voltage n-channel and p-channe...
- Patent number 6,693,331
- Issue date Feb 17, 2004
- Intel Corporation
- Kaizad R. Mistry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor transistor having a stressed channel
- Patent number 6,621,131
- Issue date Sep 16, 2003
- Intel Corporation
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating MOSFET transistors with multiple threshold vo...
- Patent number 6,586,294
- Issue date Jul 1, 2003
- Intel Corporation
- Ian R. Post
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming MOSFET gate electrodes having reduced depletion r...
- Patent number 6,362,034
- Issue date Mar 26, 2002
- Intel Corporation
- Justin S. Sandford
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
COPPER-FILLED TRENCH CONTACT FOR TRANSISTOR PERFORMANCE IMPROVEMENT
- Publication number 20220115505
- Publication date Apr 14, 2022
- Intel Corporation
- KELIN J. KUHN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER LEVEL PASSIVE HEAT SPREADER INTERPOSER TO ENABLE IMPROVED THE...
- Publication number 20210057381
- Publication date Feb 25, 2021
- Intel Corporation
- Xavier F. BRUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COPPER-FILLED TRENCH CONTACT FOR TRANSISTOR PERFORMANCE IMPROVEMENT
- Publication number 20170263721
- Publication date Sep 14, 2017
- Intel Corporation
- KELIN J. KUHN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR TRANSISTOR HAVING A STRESSED CHANNEL
- Publication number 20160133747
- Publication date May 12, 2016
- Intel Corporation
- ANAND MURTHY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COPPER-FILLED TRENCH CONTACT FOR TRANSISTOR PERFORMANCE IMPROVEMENT
- Publication number 20140264879
- Publication date Sep 18, 2014
- Kelin J. Kuhn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COPPER-FILLED TRENCH CONTACT FOR TRANSISTOR PERFORMANCE IMPROVEMENT
- Publication number 20120299069
- Publication date Nov 29, 2012
- Intel Corporation
- Kelin J. Kuhn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor transistor having a stressed channel
- Publication number 20100102356
- Publication date Apr 29, 2010
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor transistor having a stressed channel
- Publication number 20100102401
- Publication date Apr 29, 2010
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR TRANSISTOR HAVING A STRESSED CHANNEL
- Publication number 20090065808
- Publication date Mar 12, 2009
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Copper-filled trench contact for transistor performance improvement
- Publication number 20070273042
- Publication date Nov 29, 2007
- Kelin J. Kuhn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PMOS transistor strain optimization with raised junction regions
- Publication number 20070034945
- Publication date Feb 15, 2007
- Mark T. Bohr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor transistor having a stressed channel
- Publication number 20050184311
- Publication date Aug 25, 2005
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PMOS transistor strain optimization with raised junction regions
- Publication number 20040262683
- Publication date Dec 30, 2004
- Mark T. Bohr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor transistor having a stressed channel
- Publication number 20040084735
- Publication date May 6, 2004
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor transistor having a stressed channel
- Publication number 20040070035
- Publication date Apr 15, 2004
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating mosfet transistors with multiple threshold vo...
- Publication number 20030203579
- Publication date Oct 30, 2003
- Ian R. Post
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating mosfet transistors with multiple threshold vo...
- Publication number 20030190779
- Publication date Oct 9, 2003
- Ian R. Post
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING MOSFET TRANSISTORS WITH MULTIPLE THRESHOLD VO...
- Publication number 20030122198
- Publication date Jul 3, 2003
- Ian R. Post
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating dual threshold voltage n-channel and p-channe...
- Publication number 20030119248
- Publication date Jun 26, 2003
- Intel Corporation
- Kaizad R. Mistry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING DUAL THRESHOLD VOLTAGE N-CHANNEL AND P-CHANNE...
- Publication number 20030094659
- Publication date May 22, 2003
- KAIZAD R. MISTRY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor transistor having a stressed channel
- Publication number 20030080361
- Publication date May 1, 2003
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor structure with self-aligned raised source/d...
- Publication number 20030052333
- Publication date Mar 20, 2003
- Intel Corporation
- Kaizad R. Mistry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor structure with self-aligned raised source/d...
- Publication number 20010033000
- Publication date Oct 25, 2001
- Kaizad R. Mistry
- H01 - BASIC ELECTRIC ELEMENTS

Kaizad R. Mistry

Person

Patents Grantslast 30 patents

Wafer level passive heat spreader interposer to enable improved the...

Semiconductor transistor having a stressed channel

Semiconductor transistor having a stressed channel

Copper-filled trench contact for transistor performance improvement

Copper-filled trench contact for transistor performance improvement

Method of fabricating MOSFET transistors with multiple threshold vo...

Field effect transistor structure with self-aligned raised source/d...

Semiconductor transistor having a stressed channel

Semiconductor transistor having a stressed channel

Method of fabricating dual threshold voltage n-channel and p-channe...

Method of fabricating MOSFET transistors with multiple threshold vo...

Field effect transistor structure with self-aligned raised source/d...

Method of fabricating dual threshold voltage n-channel and p-channe...

Semiconductor transistor having a stressed channel

Method of fabricating MOSFET transistors with multiple threshold vo...

Method of forming MOSFET gate electrodes having reduced depletion r...

Patents Applicationslast 30 patents

COPPER-FILLED TRENCH CONTACT FOR TRANSISTOR PERFORMANCE IMPROVEMENT

WAFER LEVEL PASSIVE HEAT SPREADER INTERPOSER TO ENABLE IMPROVED THE...

COPPER-FILLED TRENCH CONTACT FOR TRANSISTOR PERFORMANCE IMPROVEMENT

SEMICONDUCTOR TRANSISTOR HAVING A STRESSED CHANNEL

COPPER-FILLED TRENCH CONTACT FOR TRANSISTOR PERFORMANCE IMPROVEMENT

COPPER-FILLED TRENCH CONTACT FOR TRANSISTOR PERFORMANCE IMPROVEMENT

Semiconductor transistor having a stressed channel

Semiconductor transistor having a stressed channel

SEMICONDUCTOR TRANSISTOR HAVING A STRESSED CHANNEL

Copper-filled trench contact for transistor performance improvement

PMOS transistor strain optimization with raised junction regions

Semiconductor transistor having a stressed channel

PMOS transistor strain optimization with raised junction regions

Semiconductor transistor having a stressed channel

Semiconductor transistor having a stressed channel

Method of fabricating mosfet transistors with multiple threshold vo...

Method of fabricating mosfet transistors with multiple threshold vo...

METHOD OF FABRICATING MOSFET TRANSISTORS WITH MULTIPLE THRESHOLD VO...

Method of fabricating dual threshold voltage n-channel and p-channe...

METHOD OF FABRICATING DUAL THRESHOLD VOLTAGE N-CHANNEL AND P-CHANNE...

Semiconductor transistor having a stressed channel

Field effect transistor structure with self-aligned raised source/d...

Field effect transistor structure with self-aligned raised source/d...