Kazuhiro Ohnishi

Person

Hachiohji, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and process of producing the same
- Patent number 7,238,582
- Issue date Jul 3, 2007
- Hitachi, Ltd.
- Hiromi Shimamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including impurity layer having a plurality of...
- Patent number 7,042,051
- Issue date May 9, 2006
- Renesas Technology Corp.
- Fumio Ootsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method and device structure of shallow trench insulatio...
- Patent number 7,029,988
- Issue date Apr 18, 2006
- Renesas Technology Corporation
- Kazuhiro Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated-gate field-effect transistor, method of fabricating same,...
- Patent number 6,936,875
- Issue date Aug 30, 2005
- Renesas Technology Corp.
- Nobuyuki Sugii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method and device structure of shallow trench insulatio...
- Patent number 6,878,606
- Issue date Apr 12, 2005
- Renesas Technology Corp.
- Kazuhiro Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and process of producing the same
- Patent number 6,835,632
- Issue date Dec 28, 2004
- Hitachi, Ltd.
- Hiromi Shimamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked gate electrode for a MOS transistor of a semiconductor device
- Patent number 6,750,503
- Issue date Jun 15, 2004
- Renesas Technology Corp.
- Kazuhiro Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and process of producing the same
- Patent number 6,610,569
- Issue date Aug 26, 2003
- Hitachi, Ltd.
- Hiromi Shimamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having two peaks in...
- Patent number 6,524,903
- Issue date Feb 25, 2003
- Hitachi, Ltd.
- Fumio Ootsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and process of producing the same
- Patent number 6,524,924
- Issue date Feb 25, 2003
- Hitachi, Ltd.
- Hiromi Shimamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and process of producing the same
- Patent number 6,133,094
- Issue date Oct 17, 2000
- Hitachi Ltd.
- Hiromi Shimamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having conducting structure
- Patent number 5,793,097
- Issue date Aug 11, 1998
- Hitachi, Ltd.
- Hiromi Shimamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 5,324,983
- Issue date Jun 28, 1994
- Hitachi, Ltd.
- Takahiro Onai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor device and manufacturing method of the same
- Publication number 20050173738
- Publication date Aug 11, 2005
- Masao Kondo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and process for producing the same
- Publication number 20050164441
- Publication date Jul 28, 2005
- Kazuhiro Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and process of producing the same
- Publication number 20050101097
- Publication date May 12, 2005
- Hiromi Shimamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication method and device structure of shallow trench insulatio...
- Publication number 20050032327
- Publication date Feb 10, 2005
- RENESAS TECHNOLOGY CORPORATION
- Kazuhiro Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and process for producing the same
- Publication number 20040178440
- Publication date Sep 16, 2004
- Kazuhiro Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication method and device structure of shallow trench insulatio...
- Publication number 20040121554
- Publication date Jun 24, 2004
- Hitachi, Ltd.
- Kazuhiro Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulated-gate field-effect transistor, method of fabricating same,...
- Publication number 20040108559
- Publication date Jun 10, 2004
- RENESAS TECHNOLOGY CORP.
- Nobuyuki Sugii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of fabricating the same
- Publication number 20030227062
- Publication date Dec 11, 2003
- Masatada Horiuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and process of producing the same
- Publication number 20030207544
- Publication date Nov 6, 2003
- Hiromi Shimamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and a method of manufacturing the same
- Publication number 20030094627
- Publication date May 22, 2003
- Fumio OOtsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulated gate field effect transistor and manufacturing thereof
- Publication number 20030008462
- Publication date Jan 9, 2003
- Hitachi, Ltd.
- Masatada Horiuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and a method of manufacturing the same
- Publication number 20020043665
- Publication date Apr 18, 2002
- Fumio OOtsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and process for producing the same
- Publication number 20010030342
- Publication date Oct 18, 2001
- Kazuhiro Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS

Kazuhiro Ohnishi

Person

Patents Grantslast 30 patents

Semiconductor device and process of producing the same

Semiconductor device including impurity layer having a plurality of...

Fabrication method and device structure of shallow trench insulatio...

Insulated-gate field-effect transistor, method of fabricating same,...

Fabrication method and device structure of shallow trench insulatio...

Semiconductor device and process of producing the same

Stacked gate electrode for a MOS transistor of a semiconductor device

Semiconductor device and process of producing the same

Method of manufacturing a semiconductor device having two peaks in...

Semiconductor device and process of producing the same

Semiconductor device and process of producing the same

Semiconductor device having conducting structure

Semiconductor device

Patents Applicationslast 30 patents

Semiconductor device and manufacturing method of the same

Semiconductor device and process for producing the same

Semiconductor device and process of producing the same

Fabrication method and device structure of shallow trench insulatio...

Semiconductor device and process for producing the same

Fabrication method and device structure of shallow trench insulatio...

Insulated-gate field-effect transistor, method of fabricating same,...

Semiconductor device and method of fabricating the same

Semiconductor device and process of producing the same

Semiconductor device and a method of manufacturing the same

Insulated gate field effect transistor and manufacturing thereof

Semiconductor device and a method of manufacturing the same

Semiconductor device and process for producing the same